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Summary Plastic yielding of anisotropic metals can be either described by a macroscopic constitutive relation or assessed by means of a model which correlates single and polycrystal behaviors. The mathematical identification of the plastic work rate derived from the two approaches, for all strain rate tensors, leads to a fit of the polycrystal yield surface by an analytical function. When a quadratic from is assumed, the macroscopic anisotropy parameters become explicit functions of the texture coefficients. This identification method is applied to calculate yield surfaces andR-values of rolled and annealed steel sheets: theR-values and in general the flow rule, are more significantly modified by the fitting than the yield surface. Thus, it is worth extending the method to more general constitutive relations which may be given by the form of their work function: alternative forms of the work function for plastic materials are explored, especially in the bearing of convexity and homogeneity where quadratic forms have a distinct advantage. Finally, it is shown that the identification of the work function allows to express the phenomenological coefficients as analytical functions of the texture parameters for many forms of the work function; in the other cases, these coefficients may be obtained by linear or non-linear regression. 相似文献
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A Saccharomyces cerevisiae sequence cloned by serendipity was found to encode a protein that is a new member of the Ypt/Rab monomeric G-protein family. This sequence shows high homology to the yeast genes SEC4 and YPT1 and, like SEC4 and YPT1, is essential for viability. The sequence was localized to chromosome V based upon hybridization to pulse-field gel-separated yeast chromosomes. The sequence has been deposited in the GenBank data library under Accession Number L17070. 相似文献
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M Martin 《Canadian Metallurgical Quarterly》1996,154(6):931-933
The growth in the number of dialysis patients in Canada is causing a critical shortage of resources. The low transplantation rate and an increase in the number of patients, combined with insufficient funding to expand facilities, threatens access to the expensive but life-sustaining therapy. Michel Martin, who recently underwent a kidney transplant, looks at the situation facing dialysis patients in Quebec and Ontario. 相似文献
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Tan W.S. Uren M.J. Houston P.A. Green R.T. Balmer R.S. Martin T. 《Electron Device Letters, IEEE》2006,27(1):1-3
A novel guarded surface leakage test structure is used to isolate the surface and bulk leakage contributions to gate current in AlGaN/GaN HFETs. Passivation with various recipes of SiN/sub x/ always resulted in the commonly observed increase in gate leakage, which was found to be dominated by bulk leakage through the AlGaN. However, high temperature deposited SiN/sub x/ recipes gave a 1-2 orders reduction in surface leakage, whereas low temperature deposition gave an increase. Gate lag measurements were found to correlate closely with the surface leakage component, giving direct evidence that the key device problem of current slump is associated with current flow at the AlGaN surface. 相似文献
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T. Jing M. Sc. Ir. P. H. F. Moshuis Prof. Dr. Ir. F. H. Kreuger 《Electrical Engineering (Archiv fur Elektrotechnik)》1991,74(4):315-319
Contents Surface charge accumulation and its decay at a GIS spacer are studied at atmospheric conditions employing a two step-calibration method. The results show that the accumulation saturates within 30 minutes; the dominant mechanism of surface charge accumulation is the drift of charged particles via air, while that of the decay is surface conduction. The characteristics are similar at both polarities.
Sättigungskonzentration und Abklingverhalten der Oberflächenladung an einem mit Gleichspannung beanspruchten Abstandshalter unter atmosphärischen Bedingungen
Übersicht Die Konzentration und das Abklingen von Oberflächenladungen an einem GIS Abstandshalter wurden unter atmosphärischen Bedingungen mit Hilfe eines zweistufigen Kalibrierungsverfahrens untersucht. Die Ergebnisse zeigen eine Sättigung der Ladungskonzentration innerhalb von 30 Minuten. Als Hauptursache der Ladungskonzentration ist die Drift geladener Teilchen in Luft anzusehen, während das Abklingen auf die Oberflächenleitung zurückzuführen ist. Ähnliche Charakteristiken ergeben sich mit beiden Polaritäten.相似文献