首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   171829篇
  免费   1380篇
  国内免费   200篇
电工技术   2595篇
综合类   122篇
化学工业   27625篇
金属工艺   9500篇
机械仪表   5789篇
建筑科学   3101篇
矿业工程   1891篇
能源动力   2823篇
轻工业   9264篇
水利工程   2751篇
石油天然气   8714篇
武器工业   12篇
无线电   14758篇
一般工业技术   38803篇
冶金工业   27938篇
原子能技术   6956篇
自动化技术   10767篇
  2021年   1689篇
  2018年   3100篇
  2017年   3196篇
  2016年   3485篇
  2015年   1793篇
  2014年   3160篇
  2013年   6636篇
  2012年   4554篇
  2011年   5673篇
  2010年   4596篇
  2009年   5074篇
  2008年   5077篇
  2007年   5010篇
  2006年   4259篇
  2005年   3903篇
  2004年   3718篇
  2003年   3583篇
  2002年   3521篇
  2001年   3495篇
  2000年   3397篇
  1999年   3249篇
  1998年   7060篇
  1997年   5178篇
  1996年   3848篇
  1995年   2937篇
  1994年   2614篇
  1993年   2745篇
  1992年   2268篇
  1991年   2321篇
  1990年   2424篇
  1989年   2340篇
  1988年   2324篇
  1987年   2206篇
  1986年   2261篇
  1985年   2304篇
  1984年   2223篇
  1983年   2140篇
  1982年   1989篇
  1981年   2200篇
  1980年   2061篇
  1979年   2270篇
  1978年   2432篇
  1977年   2433篇
  1976年   3097篇
  1975年   2246篇
  1974年   2309篇
  1973年   2344篇
  1972年   2155篇
  1971年   1911篇
  1970年   1701篇
排序方式: 共有10000条查询结果,搜索用时 15 毫秒
11.
The Magnitogorsk Metallurgical Combine has conducted a study of the effect of technological factors on the hydrogen content of chromium-nickel-molybdenum steel after vacuum degassing. It was established that the most important factor is the hydrogen content of the steel before the degassing operation. The study also determined the effects of the circulation coefficient, the duration of the degassing operation, and the vacuum used in the treatment. __________ Translated from Metallurg, No. 7, pp. 68–69, July, 2006.  相似文献   
12.
The effect of crystal orientation on the photogeneration of free charge carriers was studied for C60 single crystals in a weak magnetic field. The photoconductivity sharply depends on the orientation of magnetic field with respect to the crystallographic directions, showing a 5–8% increase for seven axes of the C60 crystal.  相似文献   
13.
The design of a sylphon bellows sensor and the basic circuits of an LC-generator and of a microprocessor unit are presented. An analytical pressure–frequency conversion function and a special method of adjusting the sensor ensure an error of less than 0.05%. The dynamic range is up to 105. The instruments developed cover the ranges 103, 104, and 105 Pa.  相似文献   
14.
A 2-GHz direct-conversion receiver for wide-band code division multiple access (WCDMA) is presented. It includes two low-noise amplifiers (LNAs), an I/Q demodulator, and two sixth-order baseband channel select filters with programmable gain. Quadrature local oscillator (LO) signals are generated on chip in a frequency divider flip-flop. An external interstage filter between the LNAs rejects transmitter leakage to relax demodulator linearity requirements. A low-voltage demodulator topology improves linearity as well as demodulator output pole accuracy. The active-RC baseband filter uses a programmable servo loop for offset compensation and provides an adjacent channel rejection of 39 dB. Programmable gain over 71-dB range in 1-dB steps is merged with the filter to maximize dynamic range. An automatic on-chip frequency calibration scheme provides better than 1.5% corner frequency accuracy. The receiver is integrated in a 0.13-/spl mu/m CMOS process with metal-insulator-metal (MIM) capacitors. Measured receiver performance includes a 6.5-dB noise figure, IIP2 of +27 dBm, and IIP3 of -8.6 dBm. Power consumption is 45 mW.  相似文献   
15.
The phenomenon of persistent tunneling photoconductivity was studied using the tunneling spectroscopy technique at liquid-helium temperature: the separation between the unoccupied levels in a δ-doped layer at the GaAs surface decreased after illumination. This decrease was due to an increase in the width of the quantum well of the δ-doped layer. For photon energies hv exceeding the GaAs band gap E g , this increase in the width of the quantum well was related to the accumulation of positive charge in the depth of GaAs induced by the generation of the electron-hole pairs and photoionization of deep centers. For hv < E g (including the case of CO2 laser), only photoionization is important. The experimental data agree with the self-consistent calculations. The critical temperature for the effect has been determined (T c = 45 K); at higher temperatures, the effect disappears.  相似文献   
16.
17.
The GeO2–NiO system is studied in the stability range of Ni2GeO4 by temperature-dependent resistivity measurements, in combination with x-ray diffraction, differential thermal analysis, and thermogravimetry. The resistivity of the starting mixtures and heat-treated samples is measured in the composition range 55–90 mol % NiO. The effect of air humidity on the resistivity of the samples is examined.  相似文献   
18.
The catalytic activities of alumina prepared from an Al alkoxide-amine adduct monomer for the reaction of cyclopentene oxide with piperidine was determined after various pretreatments, including calcination and exposure to moisture. They were compared with the activity of alumina prepared by the conventional hydrolysis method. It was found that the as-prepared sample from the alkoxide-amine monomer preparation was five times more active than a conventional preparation, suggesting that it has a higher density of surface Lewis acid sites. However, its activity was much more severely suppressed by exposure to moisture.  相似文献   
19.
20.
Nucleation and growth mechanisms and kinetics of crystals of an amino acid salt were investigated in a methanol‐water system by measuring and evaluating the induction time as a function of the supersaturation ratio and temperature in batch salting out crystallization experiments. Discrimination between the possible crystallization mechanisms, and estimation of the kinetic parameters were carried out using nonlinear parameter identification. The results concerning the growth mechanism obtained were checked additionally by measuring the induction time as a function of number density of seed crystals.  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号