Effects of NH3 plasma passivation on N-channelpolycrystalline silicon thin-film transistors

The NH₃-plasma passivation has been performed on polycrystalline silicon (poly-Si) thin-film transistors (TFT's), It is found that the TFT's after the NH₃-plasma passivation achieve better device performance, including the off-current below 0.1 pA/μm and the on/off current ratio higher than 10⁸, and also better hot-carrier reliability than the H₂-plasma devices. Based on optical emission spectroscopy (OES) and secondary ion mass spectroscopy (SIMS) analysis, these improvements were attributed to not only the hydrogen passivation of the defect states, but also the nitrogen pile-up at SiO₂/poly-Si interface and the strong Si-N bond formation to terminate the dangling bonds at the grain boundaries of the polysilicon films. Furthermore, the gate-oxide leakage current significantly decreases and the oxide breakdown voltage slightly increases after applying NH₃-plasma treatment. This novel process is of potential use for the fabrication of TFT/LCD's and TFT/SRAM's     

A physical and scalable I-V model in BSIM3v3 for analog/digitalcircuit simulation

A new physical and continuous BSIM (Berkeley Short-Channel IGFET Model) I-V model in BSIM3v3 is presented for circuit simulation. Including the major physical effects in state-of-the art MOS devices, the model describes current characteristics from subthreshold to strong inversion as well as from the linear to the saturation operating regions with a single I-V expression, and guarantees the continuities of I_ds, conductances and their derivatives throughout all V_gs, V_ds, and T_bs, bias conditions. Compared with the previous BSIM models, the improved model continuity enhances the convergence property of the circuit simulators. Furthermore, the model accuracy has also been enhanced by including the dependencies of geometry and bias of parasitic series resistances, narrow width, bulk charge, and DIBL effects. The new model has the extensive built-in dependencies of important dimensional and processing parameters (e.g., channel length, width, gate oxide thickness, junction depth, substrate doping concentration, etc.). It allows users to accurately describe the MOSFET characteristics over a wide range of channel lengths and widths for various technologies, and is attractive for statistical modeling. The model has been implemented in the circuit simulators such as Spectre, Hspice, SmartSpice, Spice3e2, and so on     

Er-doped glass ridge-waveguide amplifiers fabricated with a collimated sputter deposition technique

We report a new fabrication process for Er-doped glass ridge waveguides. The process does not require etching of an Er-doped film in defining the lateral dimension of a waveguide, but involves a liftoff process using polyimide as a sacrificial layer. An Er-doped soda-lime silicate glass film (1.5 /spl mu/m thick) was deposited at 350/spl deg/C using a collimated sputtering technique. Conventional sputtering techniques have been known to be incompatible with a liftoff process. The collimated sputtering, however, allowed us easy liftoff of Er-doped films, and produced well-defined ridges with smooth surface profiles. A 1.7-cm-long waveguide thus fabricated shows a 1.55-/spl mu/m signal enhancement of 15.4 dB with a 980-nm pump power of 40 mW. This enhancement fully compensates for both Er absorption and waveguide losses, and results in a gain of 7.2 dB.     

时域MEI方法初探

对时域ＭＥＩ方法进行了初步探索,根据ＭＥＩ方法的基本原理,建立起时域ＭＥＩ方法的一阶吸收边界条件,应用该条件对线源辐射问题的数值实验和研究表明,它可使截断边界离源更近,同时也证实了时域ＭＥＩ方法的可靠性和精确性。     

CCD图像传感器的市场与发展

随着微电子技术的发展,ＣＣＤ图像传感器的产量不断增加,应用领域不断扩展。本文对ＣＣＤ图像传感器的市场情况进行了分析与预测。对影响ＣＣＤ传感器市场未来发展具有重要作用的数字照像机的市场情况作了专门的介绍,并在充分描述了ＣＣＤ图像传感器市场情况的基础上,对目前国内外ＣＣＤ图像传感器的发展趋势作了初步探索。     

野外复杂背景下红外图像的目标检测

野外复杂背景下红外图像序列目标检测是红外野外监视中的重点问题。大量的背景物增加了目标检测的难度。文中针对野外复杂背景下红外图像序列的特点,提出了一种实用的运动目标检测算法。该算法包括两个处理步骤：首先,在场景配准后利用帧间差图像提取目标的运动信息,并据此进行目标的粗检测;其次,合目标运动在时间和空间上的相关性进行精检测。粗检测的低漏判度和精检测的低误差率保证了算法的可靠性。在检测的同时算法确定了目     

红外小光点扫描测试系统

介绍了中波和长波“红外小光点扫描测试系统”。该系统由红外聚焦光学子系统，六维精密扫描工件台及数据采集子系统构成。可用于红外焦平面器件重要性能参数如串音、响应均匀性、转移效率的测量，也可用于单元红外探测器有效响应面积和响应均匀性等参数的测量。     

激光驱动飞片实验研究及其应用分析

利用小型固体激光器在100－300mJ能量范围内成功驱动了5.5μm厚度铝飞片，最高速度达到6.6km/s，实验得到飞片速度与能量密度的关系。详细介绍了实验装置，测试系统和实验方法，并对实验测试系统进行了分析。对回收样品的分析表明：飞片具有较好的平面性，完整性和重复性。对激光驱动飞片技术在模拟太空高速微粒的应用可能性进行了分析，目前的研究表明：激光驱动飞片技术可以成为一种模拟太空高速粒子的有效实验手段。     

Sensitivity analysis of multiconductor transmission lines andoptimization for high-speed interconnect circuit design

Sensitivity analysis of multiconductor transmission lines is derived from a new, all-purpose multi-conductor transmission line model in both frequency domain and time domain. Computer implementation of this new model as well as the sensitivity analysis has been completed. It enables efficient, accurate simulations of interconnect circuit responses as well as sensitivity analysis with respect to both electrical and physical transmission line parameters. By applying sensitivity analysis to high-speed interconnect circuit design, design variables are optimized to achieve simultaneous minimization of crosstalk, delays and reflections at desired nodes in the circuit without violating any indispensable design rules. Numerical examples are presented to demonstrate the validity of the proposed sensitivity analysis and illustrate its application to the optimization of high-speed interconnect circuit design     

Analysis of a new broadcast protocol for satellite communications

In this letter, we propose a tandem broadcast selective repeat (SR) ARQ scheme for satellite communications. In the scheme, the satellite operates in a store and forward manner, which minimizes the effect of the large round-trip delay. Numerical results show that the proposed scheme would largely improve the system performance