Application of asymptotic waveform evaluation to eigenmode expansion method for analysis of simultaneous switching noise in printed circuit boards (PCBs)

In this paper, the asymptotic waveform evaluation (AWE) technique is first applied to the conventional eigenmode expansion method for characterizing a power/ground (P/G) plane pair and analyzing the simultaneous switching noise on such plane pairs for printed circuit boards or multichip modules. The application of AWE avoids a large number of iterations in computing the impedance frequency response of a P/G plane pair structure and greatly reduces the computation time. Meanwhile, to obtain an accurate solution in an entire frequency range, we employ the complex frequency hopping technique which can help select multiple expansion points. In addition, the proposed approach can also be used to characterize the P/G plane pair structures with irregular shapes. Three examples demonstrate its high efficiency and good accuracy.     

An important factor affecting synergism on coprocessing of Taiheiyo coal with Athabasca oil sand bitumen

A series of mixtures of Japanese subbituminous Taiheiyo coal and Athabasca oil sand bitumen (AOB) with various coal concentrations (0–100 wt%) was coprocessed in a 70 ml autoclave at 420°C for 1 h in the presence of H₂ (50 kg/cm² at room temperature) and sulfided Ni---Mo/Al₂O₂ catalyst. The mixture containing 2 wt% coal produced the largest amount of hexane soluble fraction (HS) and the smallest amount of benzene insoluble fraction (BI). Thus, a synergistic liquid production occurred for this mixture with 2 wt% coal by suppressing the retrogressive reactions which proceeded for pure AOB. The HS obtained from mixtures with 2–30 wt% showed higher H/C ratios and lower heteroatom contents than those obtained from pure AOB and the mixtures with more than 30 wt% coal. The amounts of transferable hydrogen contained in the mixtures were estimated using anthracene as a hydrogen acceptor. The mixtures with 2–10 wt% coal contained higher amounts of donor hydrogen than pure AOB. The HS yield from the various mixtures was correlated with the amount of donor hydrogens contained in the mixtures, except for the mixture with 10 wt% coal. Thus, the important factor which results in synergism is suggested to be the amount of donor hydrogens contained in the feed mixtures.     

27keV Ar~+斜入射时的Cu-Au合金溅射实验角分布

用27keV Ar~+分别在垂直和倾斜入射情况下,轰击了Cu-Au(30wt％)合金样品,测量了Cu和Au原子的溅射角分布。角分布是用卢瑟福背散射(RBS)技术分析Al捕获膜上的Cu-Au沉积成分而定量得到的。结果表明:(1)在Ar~+倾斜(θ=40°)入射时,Cu原子择优发射,且程度比垂直入射(θ_r=O°)时增强:(2)倾斜入射时,Cu原子的角分布显示出在接近于样品表面法线方向的发射角范围内(θ<45°),发射机率比垂直入射时减小。     

Constrained Drying of Aqueous Yttria-Stabilized Zirconia Slurry on a Substrate. I: Drying Mechanism

Aqueous yttria-stabilized zirconia slurry was cast on a substrate to form wet coatings. Both weight loss and thickness reduction were measured, during the drying process. Lateral drying was observed by in situ monitoring of the coating surface. The drying kinetics were classified as an initial constant rate period (CRP), followed by a falling rate period (FRP). Thickness reduction occurred in the CRP stage, and was uneven across the coating because of lateral flow. As tensile stresses developed within the coating because of the constrained volume shrinkage, crack formation and propagation occurred in the FRP stage and affected the drying rate.     

辐射敏感综合症--AT病研究进展

共济失调性毛细血管扩张综合症(AT)是一种单基因突变引起的遗传性疾病，表现为高辐射敏感性、进行性神经退变、免疫缺陷、早衰及易患癌症等。本文综述了AT病的研究概况，包括AT临床症状、AT基因的定位、结构与功能、辐射对AT细胞信号传导的影响、AT基因组不稳定性及基因治疗。     

Self-aligning planarization and passivation for integration applications in III-V semiconductor devices

This work reports an easy planarization and passivation approach for the integration of III-V semiconductor devices. Vertically etched III-V semiconductor devices typically require sidewall passivation to suppress leakage currents and planarization of the passivation material for metal interconnection and device integration. It is, however, challenging to planarize all devices at once. This technique offers wafer-scale passivation and planarization that is automatically leveled to the device top in the 1-3-/spl mu/m vicinity surrounding each device. In this method, a dielectric hard mask is used to define the device area. An undercut structure is intentionally created below the hard mask, which is retained during the subsequent polymer spinning and anisotropic polymer etch back. The spin-on polymer that fills in the undercut seals the sidewalls for all the devices across the wafer. After the polymer etch back, the dielectric mask is removed leaving the polymer surrounding each device level with its device top to atomic scale flatness. This integration method is robust and is insensitive to spin-on polymer thickness, polymer etch nonuniformity, and device height difference. It prevents the polymer under the hard mask from etch-induced damage and creates a polymer-free device surface for metallization upon removal of the dielectric mask. We applied this integration technique in fabricating an InP-based photonic switch that consists of a mesa photodiode and a quantum-well waveguide modulator using benzocyclobutene (BCB) polymer. We demonstrated functional integrated photonic switches with high process yield of >90%, high breakdown voltage of >25 V, and low ohmic contact resistance of /spl sim/10 /spl Omega/. To the best of our knowledge, such an integration of a surface-normal photodiode and a lumped electroabsorption modulator with the use of BCB is the first to be implemented on a single substrate.     

SIDAC双向开关触发器的典型应用

详细介绍了SIDAC作为一种高压双向触发器的工作特点及其典型的应用电路。     

油脂己烷浸出工程进展

油脂己烷浸出工程经过几十年的发展，在工艺、设备、自控、节能、环保等方面都已趋于完善。装置的规模日趋大型化。车间内的工段组合更加科学、合理与多样化，浅料层浸出器，形式多样化的湿粕脱溶系统，湿粕挤压机，废水零排放系统，不同理念的负压蒸发及余热回收系统，蒸汽冷凝水的再利用，简洁实用的全电脑操作系统，分步萃取，混合油过滤，浸出车间内的混合油碱炼、水化脱胶、磷脂干燥等使得当今的油脂浸出向大型化、集约化、自动化、节能环保的方向发展，为客户提供了越来越多的选择。