Reliability and performance analysis of time – space – time switching networks with multiple separated space switches

Since electronic switching systems usually require very strict reliability requirements as well as good performance objectives, we need to jointly analyse the performance and reliability of switching systems. In this paper, we compare conventional time–space–time switches with single space switches with those with multiple separated space switches, from the viewpoints of reliability and performance. We consider time–space–time switching networks which consist of N incoming time switches, i.e. one NxN space switch, two (N/2)x(N/2) space switches, and four (N/4)x(N/4) space switches. We introduce a Markov reliability model to study the effect of failures and analyse the reliability and performance of three different types of switching networks in terms of average blocking probability and the mean time to unreliable operation, as we vary the offered traffic. As a result, T–S–T switching networks with multiple separated space switches exhibit better performance and reliability than those with single space switches.     

Self-aligned offset gated poly-Si TFTs with a floating sub-gate

We have fabricated a self-aligned offset-gated poly-Si thin film transistor (TFT) by employing a novel photoresist reflow process. The gate structure of the new device is consisted of two unique patterns: A main-gate and a sub-gate. The new fabrication method extends the gate-oxide over the offset region. With the assistance of the sub-gate and reflowed photoresist a self-aligned offset region is successfully obtained due to the offset oxide acting as an implantation mask. The poly-Si TFT with symmetrical offsets is easily fabricated and the new method does not require any additional offset mask step. Compared with the misaligned offset gated poly-Si TFTs, excellent symmetric electrical characteristics are obtained     

SHS法陶瓷衬管的研究现状及应用前景

回顾了自蔓延高温合成陶瓷衬管的发展历史，对国内外的研究现状进行归纳总结，介绍了离心ＳＨＳ法生产陶瓷衬管的工艺特点及产品性能，展望了离心ＳＨＳ陶瓷衬管的应用前景。     

齿轮磨前滚刀的齿形研究

本文介绍了磨前滚刀滚切齿轮的最大根切量和磨后的渐开线长度计算,并建立了数学模型。为更加直观起见,还建立了模拟滚齿的数学模型。并在实验的基础上提出了参考标准。     

非标准工况下空分设备增产氩的研究与实践

文章对非标准工况下的空分设备增产氩措施进行了研究。以宝钢6#60000m3/h空分设备为例,通过设计型算法和校核型算法,建立了空分设备精馏的数学模型,通过改变数学模型的参数,分析了在非标准工况下精馏塔内的组分浓度分布,并提出了优化后的操作方案和操作参数,实施后提高了空分设备的氩提取率,取得了显著的经济效益。     

高频脉冲电铸Ni-Co纳米复合块体微观结构分析

采用高频脉冲电铸工艺制备出了镍钴纳米复合块体材料，利用场发射扫描电镜、能谱和X射线衍射的方法，重点研究了复合块体沉积层的表面形貌、相结构和结晶取向。结果表明．高频率和润湿剂的添加对沉积层的细化有重要影响，高频脉冲电铸能够获得微观组织致密、均匀的复合块体材料。     

热重分析对高分子材料中碳酸钙的定量研究

碳酸钙是高分子材料中常用的无机填料，在高温时会同二氧化碳而失重。利用热重分析可准确定出高分子材料中碳酸钙的含量，同时还可测出聚合物，挥发物的含量，热重分析法样品用量小，灵敏度高，所需时间短。     

Estimation and comparison of nitrogen loads and attenuation in agricultural catchments of Japan and Korea.

To help in clarifying the relationship between the time lag and attenuation of nitrogen (N) loads generated in agricultural catchments, long-term trends in activities that generate N loads and in environmental N loads were estimated in catchments in Japan and Korea dominated by non-point-source emissions. Our approach used statistical data and geographical information system software to analyze pollutant loads. The method was successful in both countries because of the availability of well-developed statistics, geographical information, and weather and water quality monitoring systems, and the accumulation of research data concerning the generation of N loads and the fate of N in soils. Comparison of environmental loads with the loads observed in river water at the outlet of each catchment revealed that: (1) the effect of changes in the environmental load in a catchment appeared almost immediately in the river water quality in Korea, but did not appear clearly even 10 years later in Japan; and (2) the strength of the attenuation appeared to be much lower in Korea than in Japan. These findings suggest that regional characteristics play important roles in the sensitivity of water quality to load-generating activities.     

针梁台车在大花水水电站引水隧洞混凝土衬砌施工中的改进

大花水水电站引水隧洞由于前期开挖工期略有滞后，为加快施工进度，结合全圆断面的施工特点，大部分引水隧洞采用了全圆针梁穿行式钢模台车进行混凝土衬砌。通过各参建单位对针梁台车的运用和改进，有效地提高了引水隧洞混凝土的衬砌速度，并确保了工程质量。     

Barrier layer effect of tantalum on the electromigration in sputtered copper films on hydrogen silsesguioxane and SiO2

As IC devices scale down to the submicron level, the resistance-capacitance (RC) time delays are the limitation to circuit speed. A solution is to use low dielectric constant materials and low resistivity materials. In this work, the influence of underlying barrier Ta on the electromigration (EM) of Cu on hydrogen silsesquioxane (HSQ) and SiO₂ substrates was investigated. The presence of a Ta barrier not only improves the adhesion between Cu and dielectrics, but also enhances the crystallinity of Cu film and improves the Cu electromigration resistance. The activation energy obtained suggests a grain boundary migration mechanism and the current exponent calculated indicates the Joule heating effect.