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81.
A new characterization procedure for aqueous solutions with unknown composition was proposed based on the binomial distribution
of TOC (total organic carbon) fraction in terms of a characterizing variable, the Freundlich coefficient, k, so that the solution
in question can be described by a finite number of pseudo.species identified with a certain k value. The validity and computational
accuracy of this procedure has been demonstrated by characterizing three sets of experimental data chosen from different sources.
Predictions based on this procedure yielded acceptable results that agreed closely with experimental data. 相似文献
82.
A printed compact dipole antenna for dual ISM band (2.44 and 5 GHz) is presented. The proposed antenna fed by using a 50 /spl Omega/ coaxial line occupies a volume of 15/spl times/40/spl times/1 mm/sup 3/ (FR-4, permittivity 4.6). The impedance bandwidth for 10 dB return loss is about 400 MHz (from 2170 to 2570 MHz) at 2.4 GHz band and over 2300 MHz (from 4690 to beyond 7000 MHz) at 5 GHz band. The measured radiation gains range from 1.20 to 1.41 dBi at 2.4 GHz band and from 2.25 to 3.44 dBi at 5 GHz band, respectively. 相似文献
83.
Kwon Soonho Choi Yongtae Moon Sangmi You Cheolwoo Liu Huaping Kim Jeong-Ho Kim Dae Jin Park Hosung Kim Jin Young Hwang Intae 《Wireless Personal Communications》2020,114(3):2551-2568
Wireless Personal Communications - Wireless solar blind ultraviolet (UV) scattering communication is a new type of atmosphere optics communication technology with the important and potential... 相似文献
84.
M.E. Williams K.-W. Moon W.J. Boettinger D. Josell A.D. Deal 《Journal of Electronic Materials》2007,36(3):214-219
Intermetallic compound (IMC) formation at the interface between the tin (Sn) plating and the copper (Cu) substrate of electronic
components has been thought to produce compressive stress in Sn electrodeposits and cause the growth of Sn whiskers. To determine
if interfacial IMC is a requirement for whisker growth, bright Sn and a Sn-Cu alloy were electroplated on a tungsten (W) substrate
that does not form interfacial IMC with the Sn or Cu. At room temperature, conical Sn hillocks grew on the pure Sn deposits
and Sn whiskers grew from the Sn-Cu alloy electrodeposits. These results demonstrate that interfacial IMC is not required
for initial whisker growth. 相似文献
85.
Vemulapalli G. Hanumolu P.K. Youn-Jae Kook Un-Ku Moon 《Solid-State Circuits, IEEE Journal of》2005,40(9):1972-1977
An accurately tuned low-voltage linear continuous-time filter is presented in this paper. Accurate tuning is achieved using time-constant matched master-slave tuning combined with power-up mismatch calibration. A low-pass biquad designed for a corner frequency of 115 kHz achieves better than -80-dB total harmonic distortion with a 250-mV/sub pp/ 10-kHz input signal. The prototype implemented in 0.18-/spl mu/m CMOS process occupies an area of 0.4 mm/sup 2/ and dissipates 4.6 mW (2.6 mW for the filter and 2 mW for tuning) of power. 相似文献
86.
Moon Taesup Weissman T. 《IEEE transactions on information theory / Professional Technical Group on Information Theory》2008,54(2):692-708
The problem of discrete universal filtering, in which the components of a discrete signal emitted by an unknown source and corrupted by a known discrete memoryless channel (DMC) are to be causally estimated, is considered. A family of filters are derived, and are shown to be universally asymptotically optimal in the sense of achieving the optimum filtering performance when the clean signal is stationary, ergodic, and satisfies an additional mild positivity condition. Our schemes are comprised of approximating the noisy signal using a hidden Markov process (HMP) via maximum-likelihood (ML) estimation, followed by the use of the forward recursions for HMP state estimation. It is shown that as the data length increases, and as the number of states in the HMP approximation increases, our family of filters attains the performance of the optimal distribution-dependent filter. An extension to the case of channels with memory is also established. 相似文献
87.
Hanumolu P.K. Kratyuk V. Gu-Yeon Wei Un-Ku Moon 《Solid-State Circuits, IEEE Journal of》2008,43(2):414-424
A digital-to-phase converter (DPC) is an essential building block in applications such as source-synchronous interfaces and digital phase modulators. The resolution of DPCs using analog phase interpolators is severely affected by the operating frequency and rise times of the interpolator inputs. In this paper, we present a new DPC architecture that achieves high resolution independent of both the operating frequency and the rise time. The 8 phases generated by a phase-locked loop are dithered using a delta-sigma modulator to shape the truncation error to high frequency and is subsequently filtered using a delay-locked loop phase filter. The test chip, fabricated in a 0.13 mum CMOS process, operates from 0.5 -1.5 GHz and achieves a differential nonlinearity of less than plusmn0.1 ps and an integral nonlinearity of plusmn12 ps. The total power consumption while operating at 1 GHz is 15 mW. 相似文献
88.
Kwon Soonho Kim Daeoh Lee Jihye Moon Sangmi Chu Myeonghun Bae Sara You Cheolwoo Liu Huaping Kim Jeong-Ho Kim Dae Jin Park Hosung Kim Jin Young Kim Cheol-Sung Hwang Intae 《Wireless Personal Communications》2018,102(1):507-526
Wireless Personal Communications - Generally, a ground telemetry station for a launch vehicle (LV) includes a tracking function only; therefore, position measurements for LV depend on received... 相似文献
89.
Gas Sensors: High Performance Three‐Dimensional Chemical Sensor Platform Using Reduced Graphene Oxide Formed on High Aspect‐Ratio Micro‐Pillars (Adv. Funct. Mater. 6/2015) 下载免费PDF全文
90.
Kee Soo Nam Ju Wook Lee Sang-Gi Kim Tae Moon Roh Hoon Soo Park Jin Gun Koo Kyung Ik Cho 《Electron Device Letters, IEEE》2000,21(7):365-367
A novel simplified fabrication method of a very high density p-channel trench gate power MOSFET using four mask layers and nitride/TEOS sidewall spacers is realized. The proposed process showed improved on-resistance characteristics of the device with increasing cell density and the cost-effective production capability due to the lesser number of processing steps. By using this process technique, a remarkably increased high density (100 Mcell/inch2) trench gate power MOSFET with a cell pitch of 2.5 μm could be effectively realized. The fabricated device had a low specific on-resistance of 1.1 mΩ-cm2 with a breakdown voltage of -36 V 相似文献