Comparison of Protein Extraction Solutions for Rice Starch Isolation and Effects of Residual Protein Content on Starch Pasting Properties

Protein extraction solutions such as aqueous solutions of sodium hydroxide (0.1 and 0.2 %), sodium lauryl sulfate (SLS, 1.2 %) containing sodium sulfite (0.12 %), and dodecylbenzene sulfonate (DoBS, 1.2 %) containing sodium sulfite (0.12 %) were compared in their protein removal efficiencies during isolation of starch from a rice flour (Ilpumbyo, a nonwaxy Korean rice variety). In addition, the pasting properties of the isolated starch was compared. More than 80 % of the flour protein was extracted in 1 h by stirring the dispersion (1:3, w/v) at room temperature. Repeating the extractions (1 or 2 h for each step) with fresh solution significantly increased the protein removal efficiency. When the extraction in 0.2 % NaOH was repeated four times (1 h for each step) at 25°C, the residual protein content in the isolated rice starch was 0.9 % (DB), equivalent to 86 % removal of the rice protein. Raising the extraction temperature slightly increased the protein solubility, but starch loss also became significant. Among the solutions, DoBS was most effective in removing rice protein whereas SLS was least. The residual protein content had a critical role in determining the pasting characteristics of the isolated starch, showing a negative correlation to the peak viscosity of the starch paste, but a positive correlation to the pasting temperature.     

Microstructure characterization of Sn-Ag solder joints between stud bumps and metal pads

The microstructure of the flip-chip solder joints fabricated using stud bumps and Pb-free solder was characterized. The Au or Cu stud bumps formed on Al pads on Si die were aligned to corresponding metal pads in the substrate, which was printed with Sn-3.5Ag paste. Joints were fabricated by reflowing the solder paste. In the solder joints fabricated using Au stud bumps, Au-Sn intermetallics spread over the whole joints, and the solder remained randomly island-shaped. The δ-AuSn, ε-AuSn₂, and η-AuSn₄ intermetallic compounds formed sequentially from the Au stud bump. The microstructure of the solder joints did not change significantly even after multiple reflows. The AuSn₄ was the main phase after reflow because of the fast dissolution of Au. In the solder joints fabricated using Cu stud bumps, the scallop-type Cu₆Sn₅ intermetallic was formed only at the Cu interface, and the solder was the main phase. The difference in the microstructure of the solder joints with Au and Cu stud bumps resulted from the dissolution-rate difference of Au and Cu into the solder.     

A 1.8-V 6/9-GHz reconfigurable dual-band quadrature LC VCO in SiGe BiCMOS technology

This paper presents a dual-band voltage-controlled oscillator (VCO) that can be reconfigured between 6- and 9-GHz frequency bands. It comprises a 6-GHz LC-tuned VCO, two 1/2 dividers, two mixers, and two 3-GHz notch filters. The 9-GHz output is generated based on the analog frequency multiplication method by mixing the 6-GHz VCO output with its divide-by-two signal. The VCO, implemented in a 0.18-/spl mu/m SiGe BiCMOS technology, achieves a fast reconfiguration time of 3.6 ns. The measured VCO phase noises are -106 and -104 dBc/Hz at 1-MHz offset for 6- and 9-GHz modes, respectively, while draining 10.8 mA from a 1.8-V supply.     

Generalized construction of binary bent sequences with optimal correlation property

We generalize the construction method of the family of binary bent sequences introduced by Olsen, Scholtz, and Welch (1982) to obtain a family of generalized binary bent sequences with optimal correlation and balance property by using the modified trace transform. Then, the conventional binary bent sequence becomes a special case of our construction method. Several families of the generalized binary bent sequences are constructed by using the bent functions on the intermediate field. Using some of the generalized binary bent sequences, new families of binary sequences with optimal correlation and balance property can be constructed by the lifting idea similar to No (1988) sequences, which are referred to as binary bent-lifted sequences.     

Antenna-assisted round robin scheduling for MIMO cellular systems

Packet scheduling is investigated for the downlink of a multiple-input multiple-output (MIMO) cellular system. We propose an antenna-assisted round robin scheduling (AA-RRS) scheme to improve the conventional RRS scheme. The AA-RRS scheme provides fair channel access chance to users as the RRS scheme, whereas it increases the system capacity through the effective use of multiple antennas in achieving a diversity effect from multiple users. Simulation results show that the AA-RRS scheme achieves a significant capacity gain over the RRS scheme. We also investigate the effects of long-term power control on the system capacities for the proposed scheduling scheme.     

Meshing wireless personal area networks: Introducing IEEE 802.15.5

This article presents an overview of the IEEE project 802.15.5 that targets providing mesh capabilities to both high-rate and low-rate wireless personal area networks. Low-rate mesh is built on IEEE 802.15.4 MAC, while high-rate mesh utilizes IEEE 802.15.3 MAC. We seek to share our insights and motivations of the approach adopted in the major components of the standard instead of presenting a la carte items drawn in the specification. We hope this article helps readers of the 802.15.5 standard to better understand the rationale and intent of the protocol design.     

Variable structure observer of mismatched uncertain dynamical systems

To improve the steady state estimation error due to mismatched uncertainty, a variable structure observer for mismatched uncertain dynamical systems is proposed by using the generalised matrix inverse. Simulation results show that the estimation error is largely decreasing using the proposed observer.<>     

Planar lightwave integrated circuits with embedded actives for board and substrate level optical signal distribution

This paper explores design options for planar optical interconnections integrated onto boards, discusses fabrication options for both beam turning and embedded interconnections to optoelectronic devices, describes integration processes for creating embedded planar optical interconnections, and discusses measurement results for a number of integration schemes that have been demonstrated by the authors. In the area of optical interconnections with beams coupled to and from the board, the topics covered include integrated metal-coated polymer mirrors and volume holographic gratings for optical beam turning perpendicular to the board. Optical interconnections that utilize active thin film (approximately 1-5 /spl mu/m thick) optoelectronic components embedded in the board are also discussed, using both Si and high temperature FR-4 substrates. Both direct and evanescent coupling of optical signals into and out of the waveguide are discussed using embedded optical lasers and photodetectors.     

High Performance β-Ga2O3 Schottky Barrier Transistors with Large Work Function TMD Gate of NbS2 and TaS2

Gallium trioxide, β-Ga₂O₃, has been recently studied due to its promising semiconducting properties as active material in transistors or Schottky diodes. Transistors with β-Ga₂O₃ channels are mostly metal oxide field effect transistors (MOSFET), and they show very negative threshold voltages (V_th) in general. Metal semiconductor field effect transistors (MESFETs) with top gate are also reported with less negative V_th. Still, β-Ga₂O₃ MESFETs are only a few. Here, bottom gate architecture β-Ga₂O₃ MESFETs using transition metal dichalcogenide (TMD) NbS₂ and TaS₂ are reported. Due to the large work functions of those metallic TMDs, the MESFETs display minimum subthreshold swing of 61 mV dec⁻¹, small V_th of −1.2 V, minimum OFF I_D of ≈100 fA, and maximum ON/OFF current ratio of ≈10⁸. Both β-Ga₂O₃ Schottky diodes with TaS₂ and NbS₂ display good junction stability even after 300 °C measurements in 10 mTorr vacuum. When the β-Ga₂O₃ MESFET with TaS₂ gate is integrated as a switching FET into an organic light emitting diode (OLED) circuit, it demonstrates long-term leakage endurance performance, maintaining an OLED brightness higher than 58% of the initial intensity after 100 s passes since the ON-switching point, which is even superior to the performance of conventional a-IGZO MOSFET switch.     

No-reference quality assessment of dynamic sports videos based on a spatiotemporal motion model

This paper proposes an approach to improve the performance of no-reference video quality assessment for sports videos with dynamic motion scenes using an efficient spatiotemporal model. In the proposed method, we divide the video sequences into video blocks and apply a 3D shearlet transform that can efficiently extract primary spatiotemporal features to capture dynamic natural motion scene statistics from the incoming video blocks. The concatenation of a deep residual bidirectional gated recurrent neural network and logistic regression is used to learn the spatiotemporal correlation more robustly and predict the perceptual quality score. In addition, conditional video block-wise constraints are incorporated into the objective function to improve quality estimation performance for the entire video. The experimental results show that the proposed method extracts spatiotemporal motion information more effectively and predicts the video quality with higher accuracy than the conventional no-reference video quality assessment methods.