Controlled counter-flow motion of magnetic bead chains rolling along microchannels

We demonstrate controlled transport of superparamagnetic beads in the opposite direction of a laminar flow. A permanent magnet assembles 200 nm magnetic particles into about 200 μm long bead chains that are aligned in parallel to the magnetic field lines. Due to a magnetic field gradient, the bead chains are attracted towards the wall of a microfluidic channel. A rotation of the permanent magnet results in a rotation of the bead chains in the opposite direction to the magnet. Due to friction on the surface, the bead chains roll along the channel wall, even in counter-flow direction, up to at a maximum counter-flow velocity of 8 mm s⁻¹. Based on this approach, magnetic beads can be accurately manoeuvred within microfluidic channels. This counter-flow motion can be efficiently be used in Lab-on-a-Chip systems, e.g. for implementing washing steps in DNA purification.     

A new learning method using prior information of neural networks

In this paper, we present a new learning method using prior information for three-layer neural networks. Usually when neural networks are used for identification of systems, all of their weights are trained independently, without considering interrelated weights values. Thus, the training results are usually not good. The reason for this in that each parameter has its influence on others during learning. To overcome this problem, we first give an exact mathematical equation that describes the relation between weight values given a set of data conveying prior information. The we present a new learning method that trains part of the weights and calculates the others using these exact mathematical equations. This method often a priori keeps the given mathematical structure exactly the same during learning; in other words, training is done so that the network follows a predetermined trajectory. Numerical computer simulation results are provided to support this approach. This work was presented, in part, at the Fourth International Symposium on Artificial Life and Robotics, Oita, Japan, January 19–22, 1999.     

Thermoelectric properties of Bi and Cu co-doped Ca3Co2O6single crystals

Single crystals of Bi and Cu-doped Ca₃Co₂O₆were synthesized in a molten K₂CO₃flux. Using an obtained single crystal of (Ca_0.985(5)Bi_0.015(5))₃(Co_0.990(3)Cu_0.010(3))₂O₆elongated to the c-axis direction of the crystal structure, the electric resistivity (ρ) and Seebeck coefficient (S) were measured from room temperature to over 1000 K in air. The single crystal showed p-type semiconducting behavior with ρ values of 1.8 Ω cm at 303 K and 0.017 Ω cm at 1000 K. The S values were +254 μ VK^{− 1} at 325 K, +360 μ VK^{− 1} at 420 K, and +214 μ VK^{− 1} at 1000 K. The power factor (S ² ρ ^{− 1}) increased with an increase of temperature and attained 2.70 × 10^{− 4} Wm^{− 1}K^{− 2} at 1000 K.     

粉末冶金结构零件材料的泊松比

研究了粉末冶金机械零件使用的烧结材料的杨氏模量、切变模量及泊松比与孔隙度的关系.制备了三种钢粉,在不同条件下进行了压制、烧结与热处理.孔隙度对杨氏模量、切变模量及泊松比的影响最大.特别是泊松比还受孔隙形状的影响,而孔隙形状随粉末类型、烧结温度与烧结气氛及热处理条件而变化.对于大部分实际应用的粉末组成来说,烧结气氛对经烧结和热处理后材料的泊松比影响不大.对于部分预合金化粉末(Fe4%Ni1.5%Cu0.5%Mo)+0.8%石墨,只有在孔隙度低于20%时,烧结温度对泊松比与孔隙度的关系才有影响.在这种情况下.提出了烧结与热处理试样泊松比与孔隙度关系的较简单近似方程:在烧结温度1 423K下,v=0.300-0.266P+0.579P2;在烧结温度1 523K下,v=0.304-0.264P+0.548P2.     

Back‐channel‐etched thin‐film transistor using c‐axis‐aligned crystal In–Ga–Zn oxide

Our crystalline In–Ga–Zn oxide (IGZO) thin film has a c‐axis‐aligned crystal (CAAC) structure and maintains crystallinity even on an amorphous base layer. Although the crystal has c‐axis alignment, its a‐axis and b‐axis have random arrangement; moreover, a clear grain boundary is not observed. We fabricated a back‐channel‐etched thin‐film transistor (TFT) using the CAAC‐IGZO film. Using the CAAC‐IGZO film, more stable TFT characteristics, even with a short channel length, can be obtained, and the instability of the back channel, which is one of the biggest problems of IGZO TFTs, is solved. As a result, we improved the process of manufacturing back‐channel‐etched TFTs.     

Improvement in D-E Hysteresis Curve Squareness of PZT Thin Films—Effect of Oxygen Partial Pressure in High-Pressure Post-Annealing

A high-pressure annealing was applied to a post-annealing process for sol-gel derived PZT thin films. The squareness of D-E hysteresis curves changes depending on both total pressure and oxygen concentration. Moreover, the change follows the product of the total pressure and the oxygen concentration, which correspond to oxygen partial pressure P_O2. Where the P_O2 is higher than 0.03 MPa, few of the squareness of the hysteresis curve are excellent. The squareness of the hysteresis curves dramatically improve as the P_O2 decreases. Where the P_O2 is lower than 0.01 MPa, the squareness deteriorates slightly. These changes in the D-E hysteresis curves are thought to be explained by the generation of lead and oxygen vacancies as a function of the P_O2.     

Hematopoietic–Mesenchymal Signals Regulate the Properties of Mesenchymal Stem Cells

It is well known that the properties of hematopoietic stem/progenitor cells (HSCs), such as their self-renewal ability and multipotency, are maintained through interactions with mesenchymal stem/stromal cells (MSCs). MSCs are rare cells that are present in the bone marrow and are useful for clinical applications due to their functional ability. To obtain the necessary number of cells, MSCs must be cultured to expand, but this causes a remarkable decrease in stem cell properties, such as multipotency and proliferation ability. In this study, we show that the c-Mpl signal, which is related to the maintenance of hematopoietic stem cells, has an important effect on the proliferation and differentiation ability of MSCs. Utilizing a co-culture system comprising MSCs and HSCs, it is suggested that signaling from hematopoietic cells to MSCs supports cell proliferation. Interestingly, the enhanced proliferation ability of the HSCs was decreased in c-Mpl knock-out HSCs (c-Mpl-KO). In addition, the MSCs co-cultured with c-Mpl-KO HSCs had reduced MSC marker expression (PDGFRa and Sca-1) compared to the MSCs co-cultured with c-Mpl-wild-type HSCs. These results suggest that a hematopoietic–mesenchymal signal exists, and that the state of the HSCs is important for the stability of MSC properties.     

Energy state of InGaAs quantum dots on SiO2-patterned vicinal substrate

The optical properties of In_0.8Ga_0.2As self-assembled quantum dots (SAQDs) grown on GaAs wire structures formed by utilizing SiO₂-patterned exact and 5°-off (001) GaAs substrates have been studied with micro-photoluminescence (μ-PL). Single PL peak was occurred for In_0.8Ga_0.2As SAQDs grown on SiO₂-patterned exact (001) GaAs, whereas double PL peaks were showed for SAQDs grown on 5°-off (001) GaAs substrates as the width of the opening windows increased. The power-dependent μ-PL spectra show that the first and second peaks of these double peaks were originated from the well-defined ground and excited state, respectively. These results demonstrated that In_0.8Ga_0.2As SAQDs selectively grown by utilizing SiO₂-patterned 5°-off (001) GaAs substrates have well-defined zero-dimensional quantum states.     

Fabrication and Property of Mullite Whiskers Frameworks with an Ultrahigh Porosity by Expandable Mesocarbon Microbeads

Mullite whiskers frameworks with an ultrahigh porosity were fabricated by the vapor‐phase reaction of AlF₃, Al₂O₃, and SiO₂ and adding expandable mesocarbon microbeads (MCMB) as a pore‐forming agent. A large volume expansion of 122% for MCMB due to its layered structure occurred during the formation of mullite whiskers, resulting in the expansion of samples and high porosities of 87.7%–98.2% at 50–90 wt% MCMB contents. Perfect whiskers and a lap‐joint structure formed due to the formation of mullites through the vapor‐phase reaction. A bimodal pore structure was achieved from the spaces of the whiskers framework and burning of the expanded MCMB. High compressive strengths of 1.7 to 5.4 MPa were obtained for the porous mullite at porosities of 94.2%–87.7%, which suggested a rigid structure; these strengths at the ultrahigh porosities are attributed to the merit of the framework with high strength whiskers and their strong bonding.     

Electrical resistivity of Si3N4 ceramics with Yb2O3 additive

Si₃N₄ ceramics with excellent mechanical properties are used for heat dissipation substrates and so on. In order to improve their reliability and expand their application fields, it is desirable to understand and control the electrical properties of Si₃N₄ ceramics. In this study, the electrical resistivity of Si₃N₄ ceramics with Yb₂O₃ additive was investigated by applying various voltages at temperatures ranging from 25°C to 300°C. When Yb₂O₃ was added as a sintering aid to Si₃N₄ ceramics, a crystalline J-phase (Yb₄Si₂O₇N₂) was formed and their electrical resistivity was significantly lower than that of Y₂O₃ additive. The electrical resistivity of the Yb₂O₃-added ceramics decreased with an increase in temperature and applied voltage. Yb existed in multiple valence states, Yb²⁺ and Yb³⁺, in the Si₃N₄ ceramics and the decrease in the electrical resistivity can be attributed hopping conduction through the J-phase. The J-phase in the Si₃N₄ ceramics was observed to be continuous, and percolation analysis suggested that the J-phase formed an infinite cluster. Therefore, the decrease in the electrical resistivity of the Yb₂O₃-added Si₃N₄ ceramics was found mainly to result from the formation of an infinite cluster of J-phase, which exhibits hopping conduction.