Modeling study of the impact of surface roughness on silicon and Germanium UTB MOSFETs

We outlined a simple model to account for the surface roughness (SR)-induced enhanced threshold voltage (V/sub TH/) shifts that were recently observed in ultrathin-body MOSFETs fabricated on <100> Si surface. The phenomena of enhanced V/sub TH/ shifts can be modeled by accounting for the fluctuation of quantization energy in the ultrathin body (UTB) MOSFETs due to SR up to a second-order approximation. Our model is then used to examine the enhanced V/sub TH/ shift phenomena in other novel surface orientations for Si and Ge and its impact on gate workfunction design. We also performed a calculation of the SR-limited hole mobility (/spl mu//sub H,SR/) of p-MOSFETs with an ultrathin Si and Ge active layer thickness, T/sub Body/<10 nm. Calculation of the electronic band structures is done within the effective mass framework via the Luttinger Kohn Hamiltonian, and the mobility is calculated using an isotropic approximation for the relaxation time calculation, while retaining the full anisotropy of the valence subband structure. For both Si and Ge, the dependence of /spl mu//sub H,SR/ on the surface orientation, channel orientation, and T/sub Body/ are explored. It was found that a <110> surface yields the highest /spl mu//sub H,SR/. The increasing quantization mass m/sub z/ for <110> surface renders its /spl mu//sub H,SR/ less susceptible with the decrease of T/sub Body/. In contrast, <100> surface exhibits smallest /spl mu//sub H,SR/ due to its smallest m/sub z/. The SR parameters, i.e. autocorrelation length (L) and root-mean-square (/spl Delta//sub rms/) used in this paper is obtained from the available experimental result of Si<100> UTB MOSFETs, by adjusting these SR parameters to obtain a theoretical fit with experimental data on SR-limited mobility and V/sub TH/ shifts. This set of SR parameters is then employed for all orientations of both Si and Ge devices.     

调频连续波SAR的研究进展

调频连续波合成孔径雷达(SAR)是一种新体制的高分辨率成像雷达,具有体积小,重量轻,耗电少,造价低,分辨率高等优点,非常适合小型化SAR的应用。文中建立了更易于实现的调频连续波SAR回波信号模型,给出了基本的成像处理流程;综述了国内外调频连续波SAR的最新进展,讨论了可能的应用背景,分析了进一步发展面临的主要技术问题。分析表明,调频连续波SAR具有广阔的应用前景。     

一种利用反射电极偏压的半反半透LCD

介绍了一种VA模式反射电极偏压的常黑单盒厚半反半透LCD.在透射区,形成连续且均匀的贯穿液晶层的电场;而在反射区,电场则主要由电极表面形状控制.由此,可使透射区的位相延迟约是反射区的2倍.这样一种半反半透LCD不论透射区还是反射区都有很高的光透过率(＞90%),同时二者灰阶特性重合度也很好.     

A throughput-efficient adaptive transmit-receive scheme for indoor DS-UWB systems

In this paper, a novel adaptive transmit-receive scheme is presented for indoor Direct Sequence Ultra-WideBand （DS-UWB） systems. In the proposed scheme, a simple switch module is introduced to improve the system throughput. Furthermore, adaptive detection is implemented via an improved Least Mean Squares （LMS） algorithm. The convergence behavior and the Bit Error Rate （BER） performance of the proposed scheme are examined under the realistic channel models. Simulation results show that, nearly without loss of the BER performance, the proposed scheme can obtain at least 2/3 improvement in training overhead compared with the conventional approach.     

Si衬底MOCVD生长GaN/InGaN多量子阱缺陷TEM研究

用透射电子显微镜对Si衬底生长GaN/InGaN多量子阱材料进行横断面测试,在衬底和缓冲层区域进行高分辨电子显微成像(HRTEM)、电子衍射衬度成像、选区电子衍射成像,在量子阱附近区域进行了双束近似电子衍衬像对其位错特性进行研究;用场发射扫描电子显微镜对饱和KoH溶液腐蚀前后材料成像.结果发现,AIN缓冲层具有多孔结构,高温GaN层位错平均密度达108cm-2,同扫描电子显微镜得到的六角腐蚀坑密度一致,量子阱以下发现大量位错发生90°弯曲,而使穿过量子阱位错密度大大降低.在线位错中,以刃位错居多,其次是混合位错,所观察区域几乎未见螺位错.     

A high-efficiency high-power evanescently coupled UTC-photodiode

The effects of the multimode diluted waveguide on quantum efficiency and saturation behavior of the evanescently coupled uni-traveling carrier(UTC)photodiode structures are reported.Two kinds of evanescently coupled uni-traveling carrier photodiodes(EC-UTC-PD)were designed and characterized:one is a conventional EC-UTC-PD structure with a multimode diluted waveguide integrated with a UTC-PD;and the other is a compact EC-UTC-PD structure which fused the multimode diluted waveguide and the UTC-PD structure together.The effect of the absorption behavior of the photodiodes on the efficiency and saturation characteristics of the EC-UTC-PDs is analyzed using 3-D beam propagation method,and the results indicate that both the responsivity and saturation power of the compact EC-UTC-PD structures can be further improved by incorporating an optimized compact multimode diluted waveguide.     

一种新的FDTD入射场设置方法

本文提出了一种新的入射场设置方法.采用一维FDTD算法来模拟入射波.所得结果与通常的入射场解析表达式的结果比较表明,采用一维FDTD算法引入的入射波在总场区分布均匀,在散射场区泄漏小.     

奇、偶相干热态中的光场统计性质

本文讨论了热混饨光场态参与时对奇、偶相干态的光场统计性质影响。结果表明，热光场态的存在使偶相干态的压缩效应和奇相干态中的反聚束效应减弱。     

产生M序列的一个递推算法

M序列是一类具有最长周期的非线性移位寄存器序列。本文给出了2元n级M序列的一个新的递推算法,该算法很容易实现,而且只要稍加修饰便可生成大量的M序列。     

Optimisation of sensing time and transmission time in cognitive radio-based smart grid networks

Cognitive radio (CR)-based smart grid (SG) networks have been widely recognised as emerging communication paradigms in power grids. However, a sufficient spectrum resource and reliability are two major challenges for real-time applications in CR-based SG networks. In this article, we study the traffic data collection problem. Based on the two-stage power pricing model, the power price is associated with the efficient received traffic data in a metre data management system (MDMS). In order to minimise the system power price, a wideband hybrid access strategy is proposed and analysed, to share the spectrum between the SG nodes and CR networks. The sensing time and transmission time are jointly optimised, while both the interference to primary users and the spectrum opportunity loss of secondary users are considered. Two algorithms are proposed to solve the joint optimisation problem. Simulation results show that the proposed joint optimisation algorithms outperform the fixed parameters (sensing time and transmission time) algorithms, and the power cost is reduced efficiently.