Subband-based blind signal separation for noisy speech recognition

A method for directly extracting clean speech features from noisy speech is proposed. This process is based on independent component analysis (ICA) and a new feature analysis technique for reducing the computational complexity of the frequency domain ICA. For noisy speech signals recorded in real environments, this method yielded a considerable performance improvement     

Temperature dependence of lasing characteristics forlong-wavelength (1.3-μm) GaAs-based quantum-dot lasers

Data are presented on the temperature dependence of 1.3-μm wavelength quantum-dot (QD) lasers. A low-threshold current density of 90 A/cm² is achieved at room temperature using high reflectivity coatings. Despite the low-threshold current density, lasing at the higher temperatures is limited by nonradiative recombination with a rapid increase in threshold current occurring above ~225 K. Our results suggest that very low threshold current density (⩽20 A/cm ²) can be achieved at room temperature from 1.3-μm QD lasers, once nonradiative recombination is eliminated     

Microlens for efficient coupling between LED and optical fiber

A new fabrication method of a microlens is proposed that can be easily applied to optical devices and microlens systems. The proposed microlens is formed by self-surface tension and cohesion of UV curing material. Since the microlens is hardened by short time UV exposure, the fabrication process is very simple. Integration with surface emitting-light emitting diode (SE-LED) results in enhanced coupling to optical fiber with coupling efficiency larger than the conventional case by 1.5 times. We also made a hemispheric microlensed fiber using this method. Compared with a typical arc-lensed fiber and a flat-end fiber, the coupling efficiency is improved to 18% and 40%, respectively     

A /spl Sigma/-/spl Delta/ fractional-N frequency synthesizer using a wide-band integrated VCO and a fast AFC technique for GSM/GPRS/WCDMA applications

A fractional-N frequency synthesizer (FNFS) in a 0.5-/spl mu/m SiGe BiCMOS technology is implemented. In order to operate in a wide-band frequency range, a switched-capacitors bank LC tank voltage-controlled oscillator (VCO) and an adaptive frequency calibration (AFC) technique are used. The measured VCO tuning range is as wide as 600 MHz (40%) from 1.15 to 1.75 GHz with a tuning sensitivity from 5.2 to 17.5 MHz/V. A 3-bit fourth-order /spl Sigma/-/spl Delta/ modulator is used to reduce out-of-band phase noise and to meet a frequency resolution of less than 3 Hz as well as agile switching time. The experimental results show -80 dBc/Hz in-band phase noise within the loop bandwidth of 25 kHz and -129 dBc/Hz out-of-band phase noise at 400-kHz offset frequency. The fractional spurious is less than -70 dBc/Hz at 300-kHz offset frequency and the reference spur is -75 dBc/Hz. The lock time is less than 150 /spl mu/s. The proposed synthesizer consumes 19.5 mA from a single 2.8-V supply voltage and meets the requirements of GSM/GPRS/WCDMA applications.     

Electrotunable Non‐reciprocal Laser Emission from a Liquid‐Crystal Photonic Device

A liquid crystal (LC) photonic device with an anisotropic optical heterojunction structure has been fabricated. The device has a phase‐retarding nematic LC (NLC) layer sandwiched between two polymer cholesteric LC films with right‐handed helices of different pitches. Electrotunable non‐reciprocal light transmittance and unidirectional circularly polarized (CP) lasing emission have been successfully demonstrated for this device structure. Two left CP (LCP) lasing emission peaks are observed at the edges of the overlapping region between the two photonic bands in the structure and are shifted upon the application of a voltage. In contrast, a non‐reciprocal right CP (RCP) lasing emission peak emerges at one of the band edges and diminishes upon the application of a voltage. These phenomena are interpreted based on the selective reflection of RCP light and the reorientation of the NLC molecules by the application of a voltage.     

Home Health Gateway Based Healthcare Services Through U-Health Platform

The Ubiquitous Health, or u-Health, service is an IT health care service using the ubiquitous computing environment. U-Health provides customized medical services. As it is a service that has developed from the current hospital visiting medical system, the u-Health service provides a patient with healthcare anywhere and anytime. In this paper, we propose a home health gateway based healthcare services through the u-Health platform. Using home health gateway, u-Health can provide health monitoring, diet, and exercise services using the healthcare decision support module in the ubiquitous environment. This approach would offer specialized services using an external content provider of DB. In addition, a doctor can provide advice to patients using the monitoring service. The proposed u-Health platform provides effective services using home health gateway in ubiquitous environments to customers, which will improve the health of chronic patients.     

Use of linear programming for dynamic subcarrier and bit allocation in multiuser OFDM

An adaptive subcarrier allocation and an adaptive modulation for multiuser orthogonal frequency-division multiplexing (OFDM) are considered. The optimal subcarrier and bit allocation problems, which are previously formulated as nonlinear optimizations, are reformulated into and solved by integer programming (IP). A suboptimal approach that performs subcarrier allocation and bit loading separately is proposed. It is shown that the subcarrier allocation in this approach can be optimized by the linear-programming (LP) relaxation of IP, while the bit loading can be performed in a manner similar to a single-user OFDM. In addition, a heuristic method for solving the LP problem is presented. The LP-based suboptimal and heuristic algorithms are considerably simpler to implement than the optimal IP, plus their performances are close to those of the optimal approach.     

Optoelectronic and microwave transmission characteristics of indium solder bumps for low-temperature flip-chip applications

This paper describes low-temperature flip-chip bonding for both optical interconnect and microwave applications. Vertical-cavity surface-emitting laser (VCSEL) arrays were flip-chip bonded onto a fused silica substrate to investigate the optoelectronic characteristics. To achieve low-temperature flip-chip bonding, indium solder bumps were used, which had a low melting temperature of 156.7/spl deg/C. The current-voltage (I-V) and light-current (L-I) characteristics of the flip-chip bonded VCSEL arrays were improved by Ag coating on the indium bump. The I-V and L-I curves indicate that optical and electrical performances of Ag-coated indium bumps are superior to those of uncoated indium solder bumps. The microwave characteristics of the solder bumps were investigated by using a flip-chip-bonded coplanar waveguide (CPW) structure and by measuring the scattering parameter with an on-wafer probe station for the frequency range up to 40 GHz. The indium solder bumps, either with or without the Ag coating, provided good microwave characteristics and retained the original characteristic of the CPW signal lines without degradation of the insertion and return losses by the solder bumps.     

Unraveling the Significance of Li+/e−/O2 Phase Boundaries with a 3D-Patterned Cu Electrode for Li–O2 Batteries

The reaction kinetics at a triple-phase boundary (TPB) involving Li⁺, e⁻, and O₂ dominate their electrochemical performances in Li–O₂ batteries. Early studies on catalytic activities at Li⁺/e⁻/O₂ interfaces have enabled great progress in energy efficiency; however, localized TPBs within the cathode hamper innovations in battery performance toward commercialization. Here, the effects of homogenized TPBs on the reaction kinetics in air cathodes with structurally designed pore networks in terms of pore size, interconnectivity, and orderliness are explored. The diffusion fluxes of reactants are visualized by modeling, and the simulated map reveals evenly distributed reaction areas within the periodic open structure. The 3D air cathode provides highly active, homogeneous TPBs over a real electrode scale, thus simultaneously achieving large discharge capacity, unprecedented energy efficiency, and long cyclability via mechanical/electrochemical stress relaxation. Homogeneous TPBs by cathode structural engineering provide a new strategy for improving the reaction kinetics beyond controlling the intrinsic properties of the materials.     

Systematic Study of Widely Applicable N‐Doping Strategy for High‐Performance Solution‐Processed Field‐Effect Transistors

A specific design for solution‐processed doping of active semiconducting materials would be a powerful strategy in order to improve device performance in flexible and/or printed electronics. Tetrabutylammonium fluoride and tetrabutylammonium hydroxide contain Lewis base anions, F^? and OH^?, respectively, which are considered as organic dopants for efficient and cost‐effective n‐doping processes both in n‐type organic and nanocarbon‐based semiconductors, such as poly[[N,N′‐bis(2‐octyldodecyl)‐naphthalene‐1,4,5,8‐bis(dicarboximide)‐2,6‐diyl]‐alt‐5,5′‐(2,2′‐bithiophene)] (P(NDI2OD‐T2)) and selectively dispersed semiconducting single‐walled carbon nanotubes by π‐conjugated polymers. The dramatic enhancement of electron transport properties in field‐effect transistors is confirmed by the effective electron transfer from the dopants to the semiconductors as well as controllable onset and threshold voltages, convertible charge‐transport polarity, and simultaneously showing excellent device stabilities under ambient air and bias stress conditions. This simple solution‐processed chemical doping approach could facilitate the understanding of both intrinsic and extrinsic charge transport characteristics in organic semiconductors and nanocarbon‐based materials, and is thus widely applicable for developing high‐performance organic and printed electronics and optoelectronics devices.