Design optimization with static and dynamic displacement constraints

A design optimization procedure using a sequential linear programming technique is proposed in this paper to design minimum weight structures subjected to frequency response and static displacement constraints. The merit of the proposed approach is that the reanalyses of the static and dynamic responses, as well as the computations of the static and dynamic sensitivity data, are performed in a reduced approximate model. A significant saving of computer time for large scale structures is expected. Two numerical examples show good results of this method.     

Adaptive predictive control algorithm based on Laguerre Functional Model

Laguerre Functional Model has many advantages such as good approximation capability for the variances of system time‐delay, order and other structural parameters, low computational complexity, and the facility of online parameter identification, etc., so this model is suitable for complex industrial process control. A series of successful applications have been gained in linear and non‐linear predictive control fields by the control algorithm based on Laguerre Functional Model, however, former researchers have not systemically brought forward the theoretical analyses of the stability, robustness, and steady‐state performance of this algorithm, which are the keys to guarantee the feasibility of the control algorithm fundamentally. Aimed at this problem, we introduce the principles of the Incremental Mode Linear Laguerre Predictive Control (IMLLPC) algorithm, and then systemically propose the theoretical analyses and proofs of the stability and robustness of the algorithm, in addition, we also put forward the steady‐state performance analysis. At last, the control performances of this algorithm on two different physical industrial plants are presented in detail, and a number of experimental results validate the feasibility and superiority of IMLLPC algorithm. Copyright © 2005 John Wiley & Sons, Ltd.     

STUDY ON RESIDUES OF ~（14）C－FENITROTHION IN MODEL RICE－FISH ECOSYSTEM AND FIELD RICE－FISH ECOSYSTEM

ＳＴＵＤＹＯＮＲＥＳＩＤＵＥＳＯＦ~（１４）Ｃ－ＦＥＮＩＴＲＯＴＨＩＯＮＩＮＭＯＤＥＬＲＩＣＥ－ＦＩＳＨＥＣＯＳＹＳＴＥＭＡＮＤＦＩＥＬＤＲＩＣＥ－ＦＩＳＨＥＣＯＳＹＳＴＥＭＺｈａｎｇＺｈｏｎｇｌｉａｎｇ（张仲良）；ＷａｎｇＨｕａｘｉｎ（王化新）；Ｇ?..     

高质量的一级光栅1．55μmDFB激光器

本文详细叙述了ＤＦＢ激光器的设计要点和新的工艺。采用一级全息光栅和二步液相外延法批量研制出高稳定单纵模工作的１．５５μｍ分布反馈激光器（ＤＦＢ—ＬＤ）。外延片成品率＞４０％。器件特性：２５℃时阈值电流２０ｍＡ，单面光功率＞１０ｍｗ，主边模抑制比ＳＭＳＲ达４３ｄＢ（λ／４相移光栅），谱线宽度△ν－２０ｄＢ＝０．３ｎｍ，调制速率＞１．８ＧＨｚ。可靠性测试显示：高温监测光谱稳定，２５°Ｃ时阈值退化率△Ｉｔｈ／ｔ＜０．３ｍＡ／ｋｈ，对应器件预估寿命将超过１０万ｈ。     

Protocol design and performance analysis for manufacturing messagespecification: A Petri net approach

The manufacturing message specification (MMS) is the ISO standard communication protocol specific to manufacturing. To analyze MMS design and performance, service unit automats are introduced to represent individual MMS services, while service connection Petri Nets (PNs) are constructed from these automats to describe MMS service connections and processes. This approach makes MMS protocol specification and analysis possible in terms of well-developed concepts and methods in PN theory. It leads to a distributed and hierarchical model of MMS software system by integrating service connection PNs. A generalized stochastic PN for MMS performance evaluation is obtained by incorporating service parameters and time factors into the model. A technique based on T-invariants is used to simplify the performance analysis     

Suppression of boron penetration in p+ polysilicon gateP-MOSFETs using low-temperature gate-oxide N2O anneal

It has been reported that high-temperature (~1100°C) N₂ O-annealed oxide can block boron penetration from poly-Si gates to the silicon substrate. However, this high-temperature step may be inappropriate for the low thermal budgets required of deep-submicron ULSI MOSFETs. Low-temperature (900~950°C) N₂O-annealed gate oxide is also a good barrier to boron penetration. For the first time, the change in channel doping profile due to compensation of arsenic and boron ionized impurities was resolved using MOS C-V measurement techniques. It was found that the higher the nitrogen concentration incorporated at Si/SiO₂ interface, the more effective is the suppression of boron penetration. The experimental results also suggest that, for 60~110 Å gate oxides, a certain amount of nitrogen (~2.2%) incorporated near the Si/SiO₂ interface is essential to effectively prevent boron diffusing into the underlying silicon substrate     

Enhancement of oxide break-up by implantation of fluorine inpoly-Si emitter contacted p+-n shallow junctionformation

In this study, it is demonstrated that the incorporation of fluorine can enhance poly-Si/Si interfacial oxide break-up in the poly-Si emitter contacted p⁺-n shallow junction formation. The annealing temperature for breaking up the poly-Si/Si interfacial oxide has been found to be as low as 900°C. As a result, the junction depth of the BF₂-implanted device is much larger than that of the boron-implanted device     

IC—V100电台锁相环频率合成器

本文从频率合成器的结构、功能入手,详细阐述了频率编程的原理及方法。