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51.
Incorporation of defects in metal–organic frameworks (MOFs) offers new opportunities for manipulating their microporosity and functionalities. The so-called “defect engineering” has great potential to tailor the mass transport properties in MOF/polymer mixed matrix membranes (MMMs) for challenging separation applications, for example, CO2 capture. This study first investigates the impact of MOF defects on the membrane properties of the resultant MOF/polymer MMMs for CO2 separation. Highly porous defect-engineered UiO-66 nanoparticles are successfully synthesized and incorporated into a CO2-philic crosslinked poly(ethylene glycol) diacrylate (PEGDA) matrix. A thorough joint experimental/simulation characterization reveals that defect-engineered UiO-66/PEGDA MMMs exhibit nearly identical filler–matrix interfacial properties regardless of the defect concentrations of their parental UiO-66 filler. In addition, non-equilibrium molecular dynamics simulations in tandem with gas transport studies disclose that the defects in MOFs provide the MMMs with ultrafast transport pathways mainly governed by diffusivity selectivity. Ultimately, MMMs containing the most defective UiO-66 show the most enhanced CO2/N2 separation performance—CO2 permeability = 470 Barrer (four times higher than pure PEGDA) and maintains CO2/N2 selectivity = 41—which overcomes the trade-off limitation in pure polymers. The results emphasize that defect engineering in MOFs would mark a new milestone for the future development of optimized MMMs.  相似文献   
52.
Ahn  Gaeil  Jang  Jongsoo  Chun  Woojik 《Telecommunication Systems》2002,19(3-4):481-495
The path recovery in MPLS is the technique to reroute traffic around a failure or congestion in a LSP. Currently, there are two kinds of model for path recovery: rerouting and protection switching. The existing schemes based on rerouting model have the disadvantage of more difficulty in handling node failures or concurrent node faults. Similarly, the existing schemes based on protection switching model have some difficulty in solving problem such as resource utilization and protection of recovery path. This paper proposes an efficient rerouting scheme to establish a LSP along the least-cost recovery path of all possible alternative paths that can be found on a working path, which is calculated by the upstream LSR that has detected a failure. The proposed scheme can increase resource utilization, establish a recovery path relatively fast, support almost all failure types such as link failures, node failures, failures on both a working path and its recovery path, and concurrent faults. Through simulation, the performance of the proposed scheme is measured and compared with the existing schemes.  相似文献   
53.
In this paper, effects of reader-to-reader interference are investigated for LED identification (LED-ID) system in a multi-reader environment. The LED-ID readers typically use different channels to avoid collision between readers. However, in-channel collision usually happens in terms of interrogation range. A reader-to-reader interference scenario is proposed, and nominal interrogation range of a desired reader is derived from this model. In order to evaluate the LED-ID reader-to-reader interference quantitatively, an efficient detection scheme is proposed and simulated by employing spreading sequence. The spreading sequence is inserted between each user’s frame formats. In the receiver, the desired signal is detected by using correlation among inserted spreading sequences. From simulation results, it is confirmed that the proposed scheme is very effective to enhance reliability of LED-ID communication systems.  相似文献   
54.
A chemically coupled polymer layer is introduced onto inorganic oxide dielectrics from a dilute chlorosilane‐terminated polystyrene (PS) solution. As a result of this surface modification, hydrophilic‐oxide dielectrics gain hydrophobic, physicochemically stable properties. On such PS‐coupled SiO2 or AlOx dielectrics, various vacuum‐ and solution‐processable organic semiconductors can develop highly ordered crystalline structures that provide higher field‐effect mobilities (μFETs) than other surface‐modified systems, and negligible hysteresis in organic field‐effect transistors (OFETs). In particular, the use of PS‐coupled AlOx nanodielectrics enables a solution‐processable triethylsilylethynyl anthradithiophene OFET to operate with μFET ~ 1.26 cm2 V?1 s?1 at a gate voltage below –1 V. In addition, a complementary metal‐oxide semiconductor‐like organic inverter with a high voltage gain of approximately 32 was successfully fabricated on a PS‐coupled SiO2 dielectric.  相似文献   
55.
We propose a rigorous 2D approximation technique for the 3D waveguide structures; it can minimize the well‐known approximation errors of the commonly used effective index method. The main concept of the proposed technique is to compensate for the effective cladding index in the equivalent slab model of the original channel waveguide from the modal effective index calculated by the nonuniform 2D finite difference method. With simulations, we used the proposed technique to calculate the coupling characteristics of a directional coupler by the 2D beam propagation method, and the results were almost exactly the same as the results calculated by the 3D beam propagation method.  相似文献   
56.
Silicon-germanium epitaxial layers have been grown on (100) silicon at 750° C by very low pressure chemical vapor deposition (VLPCVD). Pure SiH4 and GeH4 were used as the processing gases. Commensurate films of Si1-x withx < 0.13 have been deposited up to a critical thickness about 2-4 times larger than the equilibrium value. Interrupted growth, controlled by gas switching, was employed to improve interfacial abruptness. The films have been characterized as a function of SiH4 and GeH4 flow rates and germanium content. Growth rate and germanium incorporation as a function of GeH4:SiH4 input ratio and total gas flow rate have been studied. We observed that the growth rate of the Si1-x Ge x layer decreases as the germanium content in the film or the GeH4:SiH4 ratio increases at 750° C using VLPCVD. We also found that, for a given GeH4:SiH4 ratio, the germanium incorporated in the solid is independent of the total gas flow rate.  相似文献   
57.
We demonstrate bottom-gate thin-film transistors (TFTs) based on solution-processed HgSe nanocrystals (NCs) on plastic substrates. Solid films made of spin-coated HgSe NCs were heated at a temperature of 150 °C for 15 min to maximize the magnitude of their current, and these films were utilized as the channel layers of TFTs. A representative TFT with a bottom-gate Al2O3 layer operated as a depletion-mode one with an n-channel, exhibiting a field effect mobility of 3.9 cm2/Vs and an on/off current ratio of about 102. In addition, the electrical characteristics of the TFT on bent substrates are briefly described.  相似文献   
58.
We have developed a fully functional reconfigurable optical add‐drop multiplexer (ROADM) switch module using a polymer integrated photonic lightwave circuit technology. The polymer variable optical attenuator (VOA) array and digital optical switch array are integrated into one polymer PLC chip and packaged to form a 10‐channel VOA integrated optical switch module. Four of these optical switch modules are used in the ROADM switch module to execute 40‐channel switching and power equalization. As a wavelength division multiplexer (WDM) filter device, two C‐band 40‐channel athermal arrayed waveguide grating WDMs are used in the ROADM module. Optical power monitoring of each channel is carried out using a 5% tap PD. A controller and firmware having the functions of a 40‐channel switch and VOA control, optical power monitoring, as well as TEC temperature control, and data communication interfaces are also developed in this study.  相似文献   
59.
We suggest a novel method for treating the surfaces of dielectric layers in organic field effect transistors (OFETs). In this method, a blend of poly(9,9-dioctylfluorene-alt-bithiophene) (F8T2) and dimethylsiloxane (DMS) with a curing agent is spin coated onto the surface of a dielectric substrate, silicon oxide (SiO2), and then thermally cured. X-ray photoelectron spectroscopy, contact angle measurements, and morphology analysis were used to show that the hydrophilic DMS layer is preferentially adsorbed on the SiO2 substrate during the spin coating process. After thermal curing, the bottom DMS layer becomes a hydrophobic PDMS layer. This bottom PDMS layer becomes thinner during curing due to the upward motion of the hydrophobic PDMS molecules. The FET mobility of the cured system was 10?2 cm2/Vs, which is similar to that of polymeric semiconductors on octadecyltrichlorosilane treated SiO2 dielectric layers. We also discuss the possibility of using this blend method to increase the air-stability of polymeric semiconductors.  相似文献   
60.
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