Process Variation Study of SELBOX Inverted- T Junctionless FinFET for High-Performance Applications

This work investigates the performance of the inverted-T (IT) junctionless (JL) FinFET with selective buried oxide (SELBOX) topology. The electrical charac     

Correlation between motion of source bender element and feedback signal induced by self-monitoring

Since the introduction of bender element tests to soil testing, the reliability of the estimated travel time has been the most serious problem. The author has previously shown a potential solution whereby removing the response of the bender element subsystem from the whole response could dramatically improve the accuracy of the travel time estimation. In order to lay the foundation for estimating the response of the bender element subsystem, this paper examines the correlation between the displacements of the element and the induced feedback signals by employing a self-monitoring element. The response of the self-monitoring element is modeled as a transfer function involving two internal transfer functions that relate the input signals to the displacements and the displacements to the feedback signals, respectively. Using a laser displacement sensor, the displacements are directly measured through the entire surface and reveal the three-dimensional bending motion of the element oscillating in both longitudinal and width directions. The feedback signals are similar to, but inconsistent with, the tip displacements, and an attempt is made to correct the feedback signals. Finally, a conclusion is given on the potential for estimating the response of the bender element subsystem using the self-monitoring element.     

Determination of the Quadrupole Splitting in Bulk n-GaAs by Warm-Up Spectroscopy

Semiconductors - We found bulk n-GaAs layers grown by liquid phase epitaxy to be irregularly stressed. Deformation created by this stress causes a small but detectable quadrupole splitting of...