Characterization and comparison of PECVD silicon nitride and silicon oxynitride dielectric for MIM capacitors

In this letter, we report on the electrical characteristic and the comparison of the metal-insulator-metal (MIM) capacitors with PECVD silicon nitride (SiN) and silicon oxynitride (SiON). Both capacitors are found to exhibit low leakage and high breakdown field strength, as well as absence of dispersive behavior, good linearity, and comparable quality factor behaviors.     

Creating advanced functions on network processors: experience and perspectives

In this article we present five case studies of advanced networking functions that detail how a network processor (NP) can provide high performance and also the necessary flexibility compared with ASIC. We first review the basic NP system architectures, and describe the IBM PowerNP architecture from the data plane as well as the control plane point of view. We introduce models for the programmer's views of NP that facilitate a global understanding of NP software programming. Then, for each case study, we present results from prototypes as well as general considerations that apply to a wider range of system architectures. Specifically, we investigate the suitability of NP for QoS (active queue management and traffic engineering), header processing (GPRS tunneling protocol), intelligent forwarding (load balancing without flow disruption), payload processing (code interpretation and just-in-time compilation in active networks), and protocol stack termination (SCTP). Finally, we summarize the key features as revealed by each case study, and conclude with remarks on the future of NP.     

Low RF noise and power loss for ion-implanted Si having an improved implantation process

Very-low-transmission line noise of <0.25 dB at 18 GHz and low power loss /spl les/0.6 dB at 110 GHz have been measured on transmission lines fabricated on proton-implanted Si. In contrast, a standard Si substrate gave much higher noise of 2.5 dB and worse power loss of 5 dB. The good RF integrity of proton-implanted Si results from the high isolation impedance to ground, as analyzed by an equivalent circuit model. The proton implantation is also done after forming the transmission lines at a reduced implantation energy of /spl sim/4 MeV. This enables easier process integration into current VLSI technology.     

Thermodynamic Analysis of the Wilson Model Using Partial Excess Functions

An approach to thermodynamic analysis of models of liquid solutions is developed. The approach is based on studying local characteristics of the concentration dependences of the partial excess molar functions. The applicability region is established, and constraints on the parameters of the Wilson equation are found.     

High-performance surface-micromachined inchworm actuator

This work demonstrates a polycrystalline silicon surface-micromachined inchworm actuator that exhibits high-performance characteristics such as large force (/spl plusmn/0.5 millinewtons), large velocity range (0 to /spl plusmn/4.4 mm/sec), large displacement range (/spl plusmn/100 microns), small step size (/spl plusmn/10, /spl plusmn/40 or /spl plusmn/100 nanometers), low power consumption (nanojoules per cycle), continuous bidirectional operation and relatively small area (600 /spl times/ 200/spl mu/m/sup 2/). An in situ load spring calibrated on a logarithmic scale from micronewtons to millinewtons, optical microscopy and Michelson interferometry are used to characterize its performance. The actuator consists of a force-amplifying plate that spans two voltage-controlled clamps, and walking is achieved by appropriately sequencing signals to these three components. In the clamps, normal force is borne by equipotential rubbing counterfaces, enabling friction to be measured against load. Using different monolayer coatings, we show that the static coefficient of friction can be changed from 0.14 to 1.04, and that it is load-independent over a broad range. We further find that the static coefficient of friction does not accurately predict the force generated by the actuator and attribute this to nanometer-scale presliding tangential deflections.     

Effect of irradiation with low-energy Ar ions on the characteristics of the working and rear sides of single-crystal GaAs substrate

Contactless methods were used to study the characteristics of the front and rear sides of single-crystal GaAs wafers whose rear side was irradiated with low-energy Ar ions. Variations in the optical and photoelectric properties of irradiated and unirradiated sides were detected. A solitonic mechanism for the penetration of defects into the crystal bulk is suggested.     

Evaluating the stabilisation degree of digested sewage sludge: investigations at four municipal wastewater treatment plants.

Further reduction of volatile suspended solids (VSS) during a post-stabilisation step was applied to evaluate the stabilisation degree of digested sewage sludge. For this purpose digested sludge was collected at four municipal wastewater treatment plants (WWTPs) and further stabilised in lab-scale chemostat reactors either under anaerobic or aerobic conditions. Experimental results showed that even in adequately digested sludge a consistent amount of VSS was degraded during aerobic post-stabilisation. It seems that aerobic conditions play a significant role during degradation of residual VSS. Additionally, specific VSS production (gVSS/peCOD110.d) as well as specific oxygen uptake rate were shown to be suitable parameters to assess the degree of sludge stabilisation at WWTPs. Fourier transform infrared spectroscopy was used to reveal changes in the sludge composition. Spectra of treated and untreated sludge samples indicated that the major component of residual VSS in stabilised sludge for instance consisted of biomass, while cellulose was absent.