基于积分原理的低功耗超声波流量检测方法

文章通过对时差式超声波流量检测方法的分析，提出了基于过零检测技术及积分法的信号处理方法，避免了繁琐的信号处理，降低了整机功耗。结合工作时序的设计，提出了实现低功耗超声波液体流量检测的措施。     

Degree-of-polarization and eye-closure penalty associated with optical signals with orthogonal polarizations

We perform a systematic measurement of the degree-of-polarization (DOP) and eye-closure penalty for optical signals with orthogonal polarizations. We find that the symmetry of DOP is maintained for the orthogonal polarizations under both first and higher order polarization-mode dispersion (PMD), whereas the symmetry of eye-closure penalty is broken under second-order PMD. An orthogonal polarization pair can have large disparity of eye-closure penalty despite an identical DOP. We also demonstrate a novel approach to estimate the maximum eye-closure penalty asymmetry with three orthogonal polarizations on the Poincare/spl acute/ sphere.     

Finite sample size effect on minimum variance beamformers: optimum diagonal loading factor for large arrays

Minimum variance beamformers are usually complemented with diagonal loading techniques in order to provide robustness against several impairments such as imprecise knowledge of the steering vector or finite sample size effects. This paper concentrates on this last application of diagonal loading techniques, i.e., it is assumed that the steering vector is perfectly known and that diagonal loading is used to alleviate the finite sample size impairments. The analysis herein is asymptotic in the sense that it is assumed that both the number of antennas and the number of samples are high but have the same order of magnitude. Borrowing some results of random matrix theory, the authors first derive a deterministic expression that describes the asymptotic signal-to-noise-plus-interference ratio (SINR) at the output of the diagonally loaded beamformer. Then, making use of the statistical theory of large observations (also known as general statistical analysis or G-analysis), the authors derive an estimator of the optimum loading factor that is consistent when both the number of antennas and the sample size increase without bound at the same rate. Because of that, the estimator has an excellent performance even in situations where the quotient between the number of observations is low relative to the number of elements of the array.     

A high-performance multichannel dual-gate poly-Si TFT fabricated by excimer laser irradiation on a floating a-Si thin film

A new excimer laser annealing (ELA) process that uses a floating amorphous-Silicon (a-Si) thin film with a multichannel structure is proposed for high-performance poly-Si thin-film transistors (TFTs). The proposed ELA method produces two-dimensional (2-D) grain growth, which can result in a high-quality grain structure. The dual-gate structure was employed to eliminate the grain boundaries perpendicular to the current flow in the channel. A multichannel structure was adapted in order to arrange the grain boundary to be parallel to the current flow. The proposed poly-Si TFT exhibits high-performance electrical characteristics, which are a high mobility of 504 cm/sup 2//Vsec and a low subthreshold slope of 0.337 V/dec.     

Formation and inhibition of free radicals in electrically stressed and aged insulating polymers

Previous work has shown that prebreakdown, electrical aging, and breakdown phenomena are directly associated with charge carriers injected from electrical contacts and their subsequent dissociative trapping and recombination. In addition, the energy released from each trapping or recombination event is dissipated in the breaking of the bonds of macromolecules, thus forming free radicals and new traps in the electrically stressed insulating polymers, as predicted by Kao's model. It is this gradual degradation process that leads to electrical aging and destructive breakdown. New experimental results are presented to confirm previous findings and a new approach to inhibit the degradation process by the incorporation of suitable dopants into the polymer. The concentration of free radicals in the polymer increases with an increasing electric field at a fixed stress time of 250 h and with increasing stress time at a fixed electric field of 833 kV cm^?1. The concentration of free radicals is directly related to the concentration of new traps created by stress. However, when suitable dopants are incorporated, the initiation voltage for the occurrence of electrical treeing and the breakdown strength are both increased. The dopants tend to create shallow traps and have little effect on the deep trap concentration. This implies that the dopants act as free‐radical scavengers that tend to satisfy the unpaired electrons of the broken bonds, which create new acceptor‐like electron traps and new shallow traps. By doing so, the shallow traps screen the deep traps, thereby reducing the energy released during trapping and recombination and the probability of breaking the macromolecular bonds and causing structural degradation. © 2003 Wiley Periodicals, Inc. J Appl Polym Sci 89: 3416–3425, 2003     

Formulation of a ceramic ink for a wide-array drop-on-demand ink-jet printer

This paper describes the methodology for simulating a reprographic ink with a ceramic ink based on a commercially available zirconia powder for direct ceramic ink-jet printing. Of over-riding importance was matching viscosity and this was tested systematically by using a mineral oil–hexane binary system. Of secondary importance was adjustment of the pressure defect behind the nozzle to compensate for small differences in surface tension. The inks tested in the wide array print-head were based on low electrical conductivity liquids to avoid damage to the electroding system. The organic binder for the zirconia ink was paraffin wax and the dispersant was a hydroxystearic acid based polyester.     

Quantum mechanical effects on noise properties of nanoelectronic devices: application to Monte Carlo simulation

A discussion about the quantum mechanical effects on noise properties of ballistic (phase-coherent) nanoscale devices is presented. It is shown that quantum noise can be understood in terms of quantum trajectories. This interpretation provides a simple and intuitive explanation of the origin of quantum noise that can be very salutary for nanoelectronic engineers. In particular, an injection model is presented that, coupled with a standard Monte Carlo algorithm, provides an accurate modeling of quantum noise. As a test, the standard results of noise in tunneling junction devices are reproduced within this approach.