Effect of hydrogen charging on dislocation behavior in Ni-Cr and Ni<Subscript>2</Subscript>Cr alloys

The effects of hydrogen charging on the dislocation behaviour in Ni-Cr binary alloys have been investigated by means of transmission electron microscope (TEM) observations using single-crystalline specimens. The deformation mode of Ni-Cr alloys in the absence of hydrogen is characterized by planar dislocations. However, hydrogen charging changed the dislocation configurations to promote curved dislocations, such as dislocation loops and dipoles. The hydrogen-affected dislocation configurations are enhanced with increasing Ni content and reducing Cr content. Weak-beam images show that the Shockley partials of the hydrogen-affected dislocations frequently constrict to make kinks and cross-slip, as if the dislocations were generated by a thermally activated process. The effect of hydrogen charging on superdislocations of a Ni₂Cr superstructure has been also investigated using an aged 70Ni-30Cr alloy. While the deformation mode in the Ni₂Cr superlattice is classified as five variants of superdislocation triplets and one variant of ordinary dislocations, the hydrogen charging has preferred the ordinary dislocations to the superdislocation triplets. The results suggest that the charged hydrogen changes the local plasticity to affect the deformation dynamics in Ni-Cr alloys, where the influence of hydrogen on the plasticity is sensitive to the Ni/Cr concentration and the symmetry of atomic arrangement.     

Electron acceleration by single and double laser beams

The longitudinal electric field of single and double Gaussian laser beams are used to accelerate electrons. The longitudinal field of the single beam is concentrated on the axis and is favourable for acceleration. A set of two beams is considered. Beams run parallel, collinearly, overlap partially and have a phase difference iπ in between. As a result, the transverse components of fields cancel each other while the longitudinal components are double-fold. In both schemes, the electrons are accelerated in lengths of the Rayleigh range, which is common to the plasma-based accelerators.     

Formation of uniform GaAs multi-atomic steps with 20–30 nm periodicity and related structures on vicinal (111)B planes by MBE

We studied morphology of GaAs surfaces and the transport properties of two-dimensional electron gas (2DEG) on vicinal (111)B planes. Multi-atomic steps (MASs) are found on the vicinal (111)B facet grown by molecular beam epitaxy, which will affect electron transport on the facet. We also studied how the morphology of GaAs epilayers on vicinal (111)B substrates depends on growth conditions, especially on the As₄ flux. The uniformity of MASs on the substrates have been improved and smooth surfaces were obtained when the GaAs was grown with high As₄ flux, providing step periodicity of 20 nm. The channel resistance of the 2DEG perpendicular to the MASs is reduced drastically with this smooth morphology. These findings are valuable not only for fabricating quantum devices on the (111)B facets but also those on the vicinal (111)B substrates.     

Analysis of an Electromagnetic Field Created by Line Current Using Constrained Interpolation Profile Method

Development of accurate schemes is a technical issue related to calculation of electromagnetic fields. This study uses constrained interpolation profile (CIP) method to analyze electromagnetic fields created by line current. This is a novel method proposed by Yabe. Comparison of results obtained using finite difference time domain (FDTD) analysis and CIP analysis indicates that CIP analysis provides higher accuracy using identical discretization. In addition, given the same level of accuracy, CIP analysis requires less memory and less calculation time     

Sub-50-nm physical gate length CMOS technology and beyond usingsteep halo

Sub-50-nm CMOS devices are investigated using steep halo and shallow source/drain extensions. By using a high-ramp-rate spike annealing (HRR-SA) process and high-dose halo, 45-nm CMOS devices are fabricated with drive currents of 650 and 300 μA/μm for an off current of less than 10 nA/μm at 1.2 V with T_ox^inv =2.5 nm. For an off current less than 300 nA/μm, 33-nm pMOSFETs have a high drive current of 400 uA/μm. Short-channel effect and reverse short-channel effect are suppressed simultaneously by using the HRR-SA process to activate a source/drain extension (SDE) after forming a deep source/drain (S/D). This process sequence is defined as a reverse-order S/D (R-S/D) formation. By using this formation, 24-nm nMOSFETs are achieved with a high drive current of 800 μA/μm for an off current of less than 300 μA/μm at 1.2 V. This high drive current might be a result of a steep halo structure reducing the spreading resistance of source/drain extensions     

Cytokines affecting survival and differentiation of an astrocyte progenitor cell line

The effects of various cytokines on survival and differentiation of an astrocyte progenitor cell line (AP-16) were examined. Epidermal growth factor (EGF) deprivation caused death of AP-16 cells by apoptosis. Transforming growth factor-alpha (TGF-alpha) and basic fibroblast growth factor (bFGF) prevented the apoptosis occurring in the absence of EGF. Leukemia inhibitory factor (LIF) and ciliary neurotrophic factor (CNTF) induced glial fibrillary acidic protein (GFAP) and decreased A2B5 antigen in AP-16 cells, indicating that these cytokines induced AP-16 cells to differentiate into astrocytes.     

Pulsed KrF excimer laser annealing of silicon solar cell

The pulsed KrF excimer laser annealing of silicon films for solar cell with EBEP-CVD and LP-CVD was studied theoretically and experimentally. Three-dimensional thermal diffusion equation for microcrystalline and amorphous silicon was solved by using the finite difference methods. The results of our heat-flow simulation of laser re-crystallization in a laser irradiation with 50 ns pulse duration almost agree with the experimental results in re-crystallization depth of 0.7 μm for microcrystalline silicon (EBEP-CVD) and 0.4 μm for amorphous silicon (LP-CVD) in a single pulse excimer laser annealing.     

Effects of the velocity saturated region on MOSFET characteristics

A simple, accurate and universal relationship between MOSFET drain current in saturation, effective channel length, and gate drive has been found. It can be explained by a simple analytical model, whose validity is supported by numerical simulation. The model shows that the length of a velocity saturated region is a crucial parameter for describing MOSFET performance, particularly for short channel devices. The shrinkage of the length deteriorates the merit of channel length scaling