Development of high-efficiency a-Si solar cell submodule with a size of 30 cm × 40 cm

We have achieved a stabilized conversion efficiency of 8.9% in a single-junction a-Si solar cell and 10.6% in a double-junction a-Si/a-SiGe solar cell for a size of 1 cm², which are the world's highest values achieved so far for this size and structure. We have been investigating the improvement of stability in a-SiGe film with regard to the bottom cell i-layer, and the control of E_opt in a-SiGe film in order to confirm the tandem cell design. On the other hand, uniformity of ± 1% has been obtained in conversion efficiency for many small cells fabricated in a size of 30 cm × 40 cm, evaluated by using a-Si single-junction structure. As a result, we have achieved the stabilized high-effective area conversion efficiency of 8.64% in a 30 cm × 40 cm a-Si/a-Si tandem submodule. The combination of the above techniques and further optimization can be expected to achieve a stabilized conversion efficiency of more than 10% for a 30 cm × 40 cm double-junction a-Si/a-SiGe submodule.     

A 13.5‐in. Quad‐FHD flexible CAAC‐OS AMOLED display with long‐life OLED device structure

In this study, the device structure of a white tandem organic light‐emitting diode (OLED) was changed to control the emission area and thereby achieve less luminance decay. A long‐life 13.5‐inch 4 K flexible c‐axis‐aligned crystal oxide semiconductor (CAAC‐OS) active‐matrix OLED with less color shift and high resolution was fabricated using this long‐life white OLED, transfer technology, and a CAAC‐OS field‐effect transistor.     

Microstructural characterization of unidirectionally frozenin situ Sn-Se eutectic composites

An array of lamellar SnSe-SnSe₂ structure is obtained by unidirectional solidification, in which SnSe and SnSe₂ are, respectively,p andn type semiconductors. Their structural morphology was examined with use of transmission and scanning electron microscopes. It was found that the ordering of the alternative layers of the phases could be accomplished by a suitable choice of freezing rates, although several kinds of structural defects such as terminations, misfit lamellae and colony structure were observed. The mechanisms of these defect formations were considered in terms of the constitutional supercooling. Furthermore, the crystallographic relationship between the two phases in the solidified state was determined.     

The distribution of T lymphocytes,B lymphocytes,and dendritic‐like cells of the anal tonsil in the laboratory shrew,Suncus murinus

We investigated the distribution of T lymphocytes, B lymphocytes, and S‐100 protein‐immunoreactive dendritic‐like in the anal tonsil of the laboratory shrew, Suncus murinus. In adult animals, T lymphocytes were located mainly at the periphery of the anal tonsil, especially around small blood vessels. B lymphocytes were located in the central and subepithelial region of the anal tonsil, which includes primary lymphoid follicles, and in which there are small numbers of scattered T lymphocytes. B and T lymphocytes were distributed over 72.7 and 27.3% of the tonsillar area, respectively. However, their areas of distribution were not clearly distinguished. The areas containing B lymphocytes were enriched in S‐100 protein antibody‐immunoreactive cells, which exhibited a dendritic shape. These S‐100‐positive cells appeared to be identical to the follicular dendritic cells (FDC) seen in the follicles of lymphoid organs. These results suggest that the anal tonsils constitute one of the gut‐associated lymphoid tissues (GALT), and that a function of the anal tonsil includes the capture of intruding antigens that would generate protective antibody responses. Microsc. Res. Tech., 2011. © 2010 Wiley‐Liss, Inc.     

A differential mobility analyzer and a Faraday cup electrometer for operation at 200–930 Pa pressure

We have developed a differential mobility analyzer (DMA) based on the DMA devised by Seto et al. (1997) and a Faraday cup electrometer for measurement of nanometer-sized particles at a few hundred Pa and examined the operating characteristics of the DMA using the tandem DMA technique. The tandem DMA calibration establishes that the DMA successfully classifies particles in the 200–930 Pa pressure range. It was also found that the transfer function of the DMA follows the triangular transfer function and the resolution of the DMA is close to that given for an ideal case. As a standard of a minimum pressure that may be probed with the present DMA system, 400 Pa is estimated when the DMA operates with a 3 nlmin⁻¹ sheath flow and a 1 nlmin⁻¹ aerosol flow rate.     

Nitride-based laser diodes using thick n-AlGaN layers

We obtained 1 μm crack-free AlGaN layers up to an AlN molar fraction of 0.4 by growing directly on low-temperature-deposited buffer layers. The buffer layer is effective for growing AlGaN layers without the stress caused by the lattice mismatch. We also demonstrated nitride-based laser diodes with such a 1 μm crack-free n-AlGaN cladding layer/n-AlGaN contact layer/low-temperature-deposited buffer layer/sapphire structure, which showed a clear single spot in a far field pattern. The AlGaN-based structure can suppress optical leakage from the waveguide region to the underlying layer. The threshold current of the laser diode is about 230 mA, which is comparable to or better than that of our laser diodes with the conventional GaN-based structure.