Proposal of Design Criteria for Gas Entrainment from Vortex Dimples Based on a Computational Fluid Dynamics Method

Design criteria for gas entrainments (GE) from the liquid surface in a fast breeder reactor system were proposed in this paper for the two types of GE phenomena from a vortex dimple based on a computational fluid dynamics (CFD) method. The first gas entrainment phenomenon is a gas core extension directly to the outlet piping level, which induces large amount of GE to the flow system. The second is continuous bubble detachments from the tip of the vortex dimple. Based on CFD calculations for elemental experiments of the surface vortex, local CFD non-dimensional numbers were defined as the design criteria to prevent GE. In conclusion, it was found that the CFD non-dimensional numbers are useful for the design parameters of GE prevention.     

Can land use regulations and taxes help mitigate vehicular CO2 emissions? An empirical study of Japanese cities

This study advocates a multi-dimensional urban planning strategy to help combat climate change under local—and not national—policies. However, the literature does not provide adequate guidance to local governments seeking to enhance urbanization and in turn reduce vehicular carbon dioxide (CO₂) emissions. Therefore, this study sheds light on the effects of the following four urban planning instruments on vehicular CO₂ emissions: urbanization promoting areas, urbanization control areas, urban planning taxes and property taxes. Using Japanese city-level data from 1990 to 2010, we find that the two urbanization area planning instruments and the urban planning taxes help lower emissions by increasing population density in low-density cities and that property taxes help reduce emissions in high-density cities. However, the increased population density associated with these instruments can lead to other negative outcomes, including increased traffic accidents, increased crime and a decrease in the facility condition index. City governments should consider complementary policies to mitigate such negative outcomes when employing planning instruments aiming to increase population density.     

Surface modification of an organosilane self-assembled monolayer on silicon substrates using atomic force microscopy: scanning probe electrochemistry toward nanolithography

Organosilane self-assembled monolayers (SAMs) have been applied to resist materials for nanolithography based on scanning probe microscopy. An organosilane SAM was prepared on Si substrates from a precursor, that is octadecyltrimethoxysilane. Using an atomic force microscope with a conductive probe, current was injected from the probe into the SAM-covered Si substrate so that the SAM was locally degraded at the probe-contacting point. Nanoscale patterns drawn on the SAM was clearly imaged by lateral force microscopy. The patterning could be conducted in air while, in vacuum at the order of 10(-6) Torr, no detectable patterns were fabricated. The presence of adsorbed water at the probe/sample junction was confirmed to be crucial for the patterning of the SAM/Si. Its mechanism was, thus, ascribed to electrochemical reactions of both the SAM and Si with adsorbed water.     

Mechanisms of reduction in hole concentration in Al-doped 4H-SiC by electron irradiation

From the temperature dependence of the hole concentration in unirradiated lightly Al-doped 4H-SiC epilayers, an Al acceptor with E_V + 0.2 eV, which is an Al atom (Al_Si) at a Si sublattice site, and an unknown deep acceptor with E_V + 0.35 eV are found, where E_V is the top of the valence band. Both the densities are similar. With irradiation of 0.2 MeV electrons the Al acceptor density is reduced, while the unknown deep acceptor density is increased. Judging from the minimum electron energy required to displace a substitutional C atom (C_s) or the Al_Si, the bond between the Al_Si and its nearest neighbor C_s is broken due to the displacement of the C_s by this irradiation. Moreover, the displacement of the C_s results in the creation of a complex (Al_Si-V_C) of Al_Si and a carbon vacancy (V_C), indicating that the possible origin of the deep acceptor with E_V + 0.35 eV is Al_Si-V_C.     

Space charge behavior in polymer film based on increment of capacitance under AC high field

Polymer materials have excellent dielectric and insulation properties; however, those properties in AC high field region have not been known well. Recently we established an evaluation method of high‐field AC dissipation current waveform of polymer materials 1 . AC dissipation current waveforms of polyethylene and polypropylene films show nonlinear distortion in AC high‐field region. This nonlinearity was thought to be related to the behavior of AC space charge formation in the sample near electrodes. The properties of space charge formed under AC high field at power frequency seem to differ from those formed under DC high field. The measurement of AC space charge distribution is not so easy due to the resolution limit of the space charge measurement. We studied the dielectric properties of biaxially oriented polypropylene (BOPP) film under AC high field up to 120 °C. It was found that tan δ, AC dissipation current (Ixr), and unbalanced component of capacitive current (ΔIxc) increased when the temperature became higher. In particular, ΔIxc increased above some threshold field and was considered to be due to the AC space charge formation. This AC space charge layer near electrode is thought to be formed due to carrier injection under AC high‐field application. Usually, the carrier mobility becomes smaller on lowering the temperature. Most of the carriers injected from the electrode are trapped near the electrode in the sample film. But in the high‐temperature region, the carrier mobility becomes larger and the carrier injection starts to increase from lower field. Many more carriers are injected from the electrode. It is thought that some of the injected carriers are trapped inside the sample film; the others go through the sample to the opposite side. © 2002 Wiley Periodicals, Inc. Electr Eng Jpn, 141(2): 8–16, 2002; Published online in Wiley InterScience ( www.interscience.wiley.com ). DOI 10.1002/eej.10018     

Synthesis of polyorganosiloxane retaining SiO4 framework from inosilicate mineral by trimethylsilylation

A polyorganosiloxane retaining a SiO₄ tetrahedral framework has been synthesized by the reaction of an inosilicate mineral (para-wollastonite) with a trimethylsilylating reagent. The glassy product dissolved in a wide range of organic solvents but was insoluble in water. The analyses of the product by means of infra-red spectroscopy, X-ray powder diffraction and elemental analysis indicated that trimethylsilyl side groups were linked to the SiO₄ framework. The thermal stability of the product was determined by thermal analysis.     

Copolymerization of unsaturated polyester with styrene in inverted emulsion

Copolymerization of unsaturated polyester with styrene in water-in-oil (W/O) type emulsion was carried out with the use of various basic compounds as emulsifiers. It was found that a stable, gellike W/O type emulsion of unsaturated polyester resin is formed only when pK_a's of the bases are above 6 and their concentrations are higher than some critical value. In these conditions, water can be dispersed in emulsion up to 900% to the resin. By polymerization, the stable W/O type emulsion is transformed to a white solid copolymer which is dry to the touch and which contains 90–95% of initially added water. It was confirmed that the basic compounds react with the carboxylic group of the polyester to form at the water-resin interface polyester salts, which act as true emulsifying agents. The stabilization mechanism of the emulsion at various concentrations of the polyester salt was investigated, mainly by microscopic observations, and an interpretation of the critical value of emulsifier concentration is proposed.     

Silica films with a single-crystalline mesoporous structure

Films of mesoporous materials attract broad interest because of their wide applicability in the fields of optics and electronics. Although many of these films have a regular local porous structure, the structural regularity has not been used practically yet because of difficulties in its control on macroscopic scales. Here, we demonstrate the preparation of mesoporous silica films whose porous structure can be described as a single crystal, that is, a long-range order of cage-like pores is maintained over centimetre scales. These films have a three-dimensional hexagonal (space group P6(3)/mmc) porous structure, and the in-plane arrangement of the pores is strictly controlled by a polymeric substrate surface that has been treated by rubbing. This new class of single-crystalline films with mesoscopic periodic structure is a significant breakthrough in bottom-up nanotechnology, and could lead to novel devices, for example, optics in a soft X-ray region, and quantum electronics.     

Polymer film-type channel electron multipliers: Their characteristics and comparison with bulk-type flexible multipliers

Polymer film-type channel electron multipliers (CEMs) were developed and their characteristics investigated in comparison with bulk-type flexible CEM. As film-type CEMs, a paint-coating-type CEM and a solvent-etching-type CEM were fabricated. The paint-coating-type CEM is made by coating a “paint” which is prepared by dissolving in a solvent an electronically conductive polymeric composition having a high secondary electron emission yield. Up to the present study the mean gain of the film-type CEM, in spite of the lower resistivity of the dynode, seems to be slightly more dependent on the count rate than that of the bulk-type CEM made of the same material. However, the convenience of fabricating the dynode film by coating the dynode-forming paint on the internal surface of any shaped tube or a flexible polymer tube would overcome the slight disadvantage mentioned above.