A new fabrication technology for AlGaAs/GaAs HEMT LSIs using InGaAsnonalloyed ohmic contacts

The authors studied the nonalloyed ohmic characteristics of HEMTs (high electron mobility transistors). At high integration levels, nonalloyed ohmic contacts were found to have two advantages: an extremely short ohmic length with low parasitic source series resistance and direct connection between the source/drain and gate with the same metal. The propagation delay in a ring oscillator with a single-metal source/drain and gate formed simultaneously was 37 ps/gate (L _g=0.9 μm). The very short ohmic metal contacts and just three contact holes made it possible to reduce the memory cell area greatly. The cell is 21.5×21.5 μm², one of the smallest ever reported for a GaAs-based static RAM. Using smaller load HEMTs or resistor loads in the memory cell, combined with nonalloyed ohmic technology with quarter- or subquarter-micrometer-gate HEMTs it is possible to fabricate a very-high-speed LSI such as a 64-kb static RAM with a reasonable chip size     

Clinical implications of chromosomal abnormalities in 401 patients with myelodysplastic syndromes: a multicentric study in Japan

It is well known that cytogenetic analysis in patients with myelodysplastic syndrome (MDS) provides information useful in determining their prognosis. Based on the chromosomal results obtained from 401 MDS patients by a multicentric study in Japan, we studied correlations between chromosomal findings and prognosis or leukemic transformation in MDS patients. Patients with complex aberrations (cytogenetic abnormalities at more than three chromosomes), of any subtype, had a poor prognosis; for example, > 60% of patients with refractory anemia (RA) showing complex aberrations died within one year, but only 11% of them developed leukemia. In patients with RA with ringed sideroblasts (RARS), > 70% of those with complex aberrations evolved into the leukemic phase and survived for less than one year, suggesting a biologic heterogeneity in RARS patients. By contrast, about 5% of patients with RA or RARS exhibiting chromosomal findings other than -7/7q-, +8, two aberrations, and complex aberrations, developed leukemia and had a favorable prognosis. Therefore, the presence of chromosome abnormalities alone in patients with RA or RARS is not a factor in predicting leukemic transformation or poor prognosis. In patients with refractory anemia with an excess of blasts (RAEB), the presence of chromosome aberrations at MDS diagnosis affected the occurrence of leukemic transformation (24% versus 43%), however, no particular difference was noted in patients with RAEB in transformation with regard to whether they had chromosome changes or not, and about 60% of them evolved into leukemia. The poor prognosis related to complex aberrations was consistently noted in all MDS subtypes or age-matched groups, indicating that this cytogenetic anomaly is an independent risk factor for a poor prognosis in MDS patients. The duration between MDS diagnosis and development of the leukemic phase and that between the latter and death were significantly shorter in patients with complex aberrations than those without this change. Although the clinical significance of certain chromosomal abnormalities differs among subtypes of MDS, a new scoring system for predicting prognosis by cytogenetic changes, in combination with hematologic parameters, was proposed.     

Stereoscopic synthesized brain-surface imaging with MR angiography for localization of a peripheral mycotic aneurysm: case report

A patient with subacute bacterial endocarditis and a peripheral mycotic aneurysm is presented. We used a combined multi-slice surface anatomy scanning (SAS) and contrast-enhanced MR angiography image to determine the exact location of the small lesion by applying a skin marker on the scalp and visualizing the relationship of the marker to the brain surface structures and to the lesion. This technique was useful for the removal of a small peripheral aneurysm using only a limited craniotomy.     

Effects of cytogenin on spontaneous arthritis in MRL/1 mice and on pristane-induced arthritis (PIA) in DBA/1J mice

Cytogenin, 8-hydroxy-3-hydroxymethyl-6-methoxyisocoumarin, has low cytotoxicity on murine and human tumour cells in vitro. It augments or suppresses phagocytosis of macrophages and lymphocyte proliferation. It has been reported that cytogenin has a potent inhibitory effect clinically on adjuvant arthritis in Lewis rats and on type II collagen-induced arthritis in DBA/1J mice. Our experimental findings provide evidence that cytogenin has beneficial effects on spontaneous polyarthritis in MRL/1 mice and pristane-induced arthritis in DBA/1J mice. The results suggest that the mode of the anti-arthritic action of cytogenin is different from those of NSAIDs; although the precise mode of action remains unclear, cytogenin may become an excellent therapeutic agent for rheumatoid arthritis.     

A software tool to support the reliability design and evaluation oftelecommunication networks

Highly reliable telecommunication networks require new technologies, such as the reliability specification, design, and evaluation method used at NTT. This paper describes the basic concepts of this method, and the ARDES-NET (Availability Reliability Design and Evaluation System for NETworks) software tool is used to support the reliability design and evaluation. ARDESNET has a user-friendly interface and can be easily put into practice     

Intelligent manipulator system with nonsymmetric and redundant master-slave

Some work is so complicated and unsteady that it is not possible to use automatic robots, such as FA robots. In such a case, a teleoperated manipulation system is applied. In this research, the authors aim at a reduction in the operator's physical and mental burdens. An artificially intelligent manipulator system has been developed with nonsymmetric and redundant master-slave. This system has five features: (1) a polar coordinates master arm; (2) a highly operational articulated slave arm with 7 degrees of freedom; (3) a nonsymmetric configuration and different degrees of freedom master-slave control; (4) an expert system; and (5) a new master-slave control motion, which makes the operator's task easier with automatic force/position control. The system was experimentally produced and its performance tested and evaluated. A qualitative evaluation was carried out by conducting a comparative test on the conventional master-slave control and the new master-slave control. It was found to be effective in reducing operating time, as well as work-induced fatigue.     

Transmission and attenuation of the dominant mode in uniformly bentcircular hollow waveguides for the infrared: scalar analysis

A numerical evaluation is conducted of electric field distributions, phase constants, and attenuation constants of the lowest eigenmode in the general class of uniformly bent circular hollow waveguides. The analysis is based on a scalar equation, and numerical results are compared with those of existing approximate theories. Normalized forms of attenuation constants are presented for the parallel and perpendicular polarizations to the bending plane by using structural and material parameters. For sharply bent waveguides, useful and simple expressions are derived for the attenuation constants of the TE and TM modes in the corresponding slab geometry with suitable weighting parameters     

Ultrahigh-speed HEMT LSI technology for supercomputer

The current status of high electron mobility transistor (HEMT) technology at Fujitsu for high-performance VLSI is presented, focusing on device performance in the submicrometer dimensional range and the HEMT LSIs implemented in supercomputer systems. The HEMT is a very promising device for ultrahigh-speed LSI/VLSI applications because of the high-mobility GaAs/AlGaAs heterojunction structure. A 1.1 K-gate bus-driver logic LSI has been developed to demonstrate the high-speed data transfer in a high-speed parallel processing system at room temperature, operating at 10.92 GFLOPS. A cryogenic 3.3 K-gate random number generator logic LSI with maximum clock frequency of 1.6 GHz has also been developed to demonstrate the high-clock-rate system operations at liquid-nitrogen temperature. For VLSI level complexity, a HEMT 64-kb static RAM with 1.2-ns access operation and a 45 K-gate gate array with 35-ps logic delay have been developed operating at room temperature, demonstrating the high performance required for future high-speed computer systems     

Reduction of the off-state current of polysilicon thin-filmtransistors by means of a polysilicon buffer layer

The off state current for polysilicon thin-film transistors for pixels in LCDs has been successfully reduced by introducing a polysilicon buffer layer between a polysilicon active layer fabricated by solid-phase-crystallisation (SPC) and a fused quartz substrate. Off-slate current of less than 1 pA under V_gs=-25 V at V_ds=3 V was obtained for n-channel single-gate coplanar transistors using the buffer layer (400 Å)