Estimation of wave fields of incident beams in a transmission electron microscope by using a small selected-area aperture

The direction of an electron beam in a nanometer-sized area is measured directly by utilizing a selected-area aperture. By the measurements at several areas in a beam, the wavefront curvature and thus the defocus value of the beam are detected. From the defocus value, the wave field at the specimen plane is also reproduced in consideration of the influences of the condenser aperture and spherical aberration of the illumination lens. The result shows that phase deviation of 2π is caused only at about 10?nm apart from the beam center in a beam with a typical diameter for high-resolution transmission electron microscopy. Based on the defocus value, the convergence angle of the beam is also estimated to be about 6?mrad without being influenced by the partial coherence, that is, independently of the type of the electron gun. Measuring the defocus values for only two beam diameters enables us to determine geometrical parameters peculiar to the illumination system, based on which wave fields of any beam diameters by any condenser aperture sizes can be estimated. The technique proposed in this paper is effective in evaluating the influence of wavefront curvature of incident beams on various kinds of precise measurements conducted in transmission electron microscopes.     

水平井电缆牵引器滚轮与管壁压力的测量

水平井电缆牵引器滚轮与管壁之间的压力是进行牵引器结构设计和作业控制的一项关键参数。如果压力施加不当,滚轮将出现打滑或堵转。由于套管细长,滚轮与管壁的接触位置又不断在发生变化,因此压力测量的难度很大。笔者提出在套管上开窗口并用球头立柱支撑压板,使立柱与压板始终处于单面点接触状态,确保压板发生变形时立柱只受到压力。为防止压板从窗口掉入套管,将压板的两个侧立面加工为楔形,与窗口侧立面具有相同的锥度。研究介绍了测力系统的设计和工作原理,提出了有无预紧力2种情况下支撑立柱的压力计算模型,建立了测试系统,并对牵引器在套管内爬行时的压力进行了测量。根据得到的16根支撑立柱的应变值,计算和分析了压板和立柱上的压力分配。     

Efficient implementation of 3D filter for moving object extraction

In this paper the design and implementation of Multi-Dimensional (MD) filter, particularly 3-Dimensional (3D) filter, are presented. Digital (discrete domain) filters applied to image and video signal processing using the novel 3D multirate algorithms for efficient implementation of moving object extraction are engineered with an example. The multirate (decimation and/or interpolation) signal processing algorithms can achieve significant savings in computation and memory usage. The proposed algorithm uses the mapping relations of z-transfer functions between non-multirate and multirate mathematical expressions in terms of time-varying coefficient instead of traditional polyphase de- composition counterparts. The mapping properties can be readily used to efficiently analyze and synthesize MD multirate filters.     

100 Å-thick tunnel junction by double impurity doping liquid phase epitaxy for V-band TUNNETT oscillation

The tunnel injection transit time (TUNNETT) diodes with p⁺p⁺n⁺n⁻n⁺ structure were fabricated by liquid phase epitaxy (LPE). About 100 Å tunnel junction (p⁺n⁺) was successfully prepared by the double impurity diffusion of Ge and S during LPE growth. Continuous wave (CW) oscillation was realized at 51.520 GHz in the V-band cavity with the phase noise of −60 dBc/Hz at 1 kHz bandwidth.     

High-performance low-cost phase-shifter design based on ferroelectric materials technology

A novel approach to ferroelectric phase-shifter design using Ba/sub x/Sr/sub 1-x/TiO/sub 3/ (BSTO) films in a multilayer dielectric coplanar waveguide structure is described. By including a low-loss dielectric layer (SiO/sub 2/) between the coplanar waveguide conductors and a layer of ferroelectric materials, significant reduction in insertion loss can be achieved in conjunction with a threefold increase in figure of merit (/spl deg//dB).     

Electrical properties of HgCdTe epilayers doped with silver using an AgNO3 solution

We employed AgNO₃ solutions for doping Ag in liquid phase epitaxy (LPE) grown Hg_0.78Cd_0.22Te epilayers and found that the minority carrier lifetimes became longer so that the diode properties improved. After annealing LPE grown Hg(1-x)Cd(x)Te layers (x=0.22) in Hg atmosphere, the epilayers were immersed in an AgNO₃ solution at room temperature. The typical carrier concentrations of holes was 3 × 10¹⁶ cm⁻³ at 77K. These values were almost the same as for the nondoped wafers. Also, its acceptor level was 3 to 4 meV. This shows that the Ag was activated. The doped crystals have lifetimes several times longer than those of the nondoped crystals. Numerical fitting showed the lifetime was limited mostly by the Auger 7 process. The Shockley-Read-Hall recombination process was not effective. To examine the Ag-doped wafer, we fabricated photodiodes using standard planar technology. The diodes have an average zero-bias resistance of several MΩ and a shunt resistance of about 1 GΩ for a 10 μm cutoff wavelength at 78K. These values are about four times higher than those of nondoped diodes. The photo current is also two times higher at the same pixel size. This shows that the quantum efficiency is increased. The extension of the lifetime contributes to the high resistance and the high quantum efficiency of the photodiode.     

Still image transmission using ARQ over Rayleigh fading channels

The authors propose a new ARQ scheme suitable for image transmission over radio channels. The proposed scheme detects only serious degradation and so attains higher throughput performance than the conventional ARQ scheme     

CuPc/PbZr0.2Ti0.8O3/(La,Ba)MnO3 field effect transistor heterojunction photomemory

We investigated a photoconductor(PC)/ferroelectric oxide(OF)/semiconductor oxide(SO) POS-FET structure photomemory consisting of organic photoconductor CuPc/inorganic ferroelectric PbZr_0.2Ti_0.8O₃ heterojunction gate and a ferromagnetic oxide semiconductor La_0.87Ba_0.13MnO₃ channel. Visible light information detected by photoconductor CuPc can be memorized in ferroelectric PbZr_0.2Ti_0.8O₃, and non-volatile and non-destructive reading out process of light information memorized in this ferroelectric layer were achieved by reading out the resistance modulation of ferromagnetic semiconductor oxide La_0.87Ba_0.13MnO₃ channel under the photoconductor/ferroelectric gate.     

Effects of AsH3 surface treatment for the improvement of ultra-shallow area-selective regrown GaAs sidewall tunnel junction

Low-temperature (290°C) area-selective regrowth by molecular layer epitaxy (MLE) was applied for the fabrication of an ultra-shallow sidewall (50 nm) GaAs tunnel junction. Fabricated tunnel junctions have shown a record peak current density up to 35,000 A/cm². It is shown that the tunnel junction characteristics are strongly dependent on the sidewall orientation and the AsH₃ surface treatment conditions just prior to regrowth. The effects of AsH₃ surface treatment are discussed in view of the control of surface stoichiometry.