A 99-mm2 0.7-W single-chip MPEG-2 422P@ML video, audio,and system encoder with a 64-Mb embedded DRAM for portable 422P@HLencoder system

A scalable single-chip 422P@ML MPEG-2 video, audio, and system encoder LSI for portable 422P@HL system is described. The encoder LSI is implemented using 0.13-μm embedded DRAM technology. It integrates 3-M logic gates and 64-Mb DRAM in an area of 99-mm². The power consumption is suppressed to 0.7 W by adopting a low-power DRAM core. It performs real-time 422P@ML video encoding, audio encoding, and system encoding with no external DRAM. Furthermore, the encoder LSI realizes a 422P@HL video encoder with multichip configuration, due to its scalable architecture. This results in a PC-card size 422P@HL encoder for portable HDTV codec system     

Bias-stress-induced increase in parasitic resistance of InP-based InAlAs/InGaAs HEMTs

The reliability of InP-based HEMTs is studied, focussing on how it is affected by the doped layer material and gate recess structure. Bias-and-temperature stress tests reveal that fluorine-induced donor passivation in the recess region, formed adjacent to the gate electrode, causes the source resistance (R_s) to increase at large drain bias voltages. The increase in R_s can be prevented by using InP or InAlP as the carrier supply layer material instead of InAlAs. On the other hand, the increase in the drain resistance (R_d) does not depend on the material of the carrier supply layer, which suggests that a mechanism different from that in the case of R_s should be considered. It is also found that a deep gate recess suppresses the increase in R_d after long-term stressing.     

5V转换成-10V的简单电路

典型开关式电容器充电泵不需要电感器，因此容易设计．且能将正电压加倍及将正电压转换成一个等效负电压。但在某些应用中．只有正电源可用．且电源系统必须产生一个幅度比正电源电压幅度更大的负电压。图1所示电路可将其输入电压反相的同时将所得负电压加倍。     

Photosensitivity in low-loss perfluoropolymer (CYTOP) fibrematerial

Photosensitivity in a perfluoropolymer (CYTOP) optical fibre is investigated. Significant diffraction has been observed from transmission gratings made from the fibre. A maximum diffraction efficiency of 1.6% has been achieved, corresponding to an index change ≃3×10^-4. The study demonstrates for the first time the existence of significant photosensitivity and the feasibility of writing a Bragg grating in a CYTOP fibre     

Generation control circuit for photovoltaic modules

Photovoltaic modules must generally be connected in series in order to produce the voltage required to efficiently drive an inverter. However, if even a very small part of photovoltaic module (PV module) is prevented from receiving light, the generation power of the PV module is decreased disproportionately. This greater than expected decrease occurs because PV modules which do not receive adequate light cannot operate on the normal operating point, but rather operate as loads. As a result, the total power from the PV modules is decreased if even only a small part of the PV modules are shaded. In the present paper, a novel circuit, referred to as the generation control circuit (GCC), which enables maximum power to be obtained from all of the PV modules even if some of the modules are prevented from receiving light. The proposed circuit enables the individual PV modules to operate effectively at the maximum power point tracking, irrespective of the series connected PV module system. In addition, the total generated power is shown experimentally to increase for the experimental set-up used in the present study     

Characterization of plasma membrane H+-ATPase from salt-tolerant yeast Candida versatilis

Plasma membrane was isolated from the salt-tolerant yeast Candida versatilis and the ATPase in plasma membrane was characterized. The ATPase was a typical H⁺-ATPase with similar properties to the Saccharomyces cerevisiae and Zygosaccharomyces rouxii enzymes. It was reacted with antibody (IgG) raised against S. cerevisiae plasma membrane H⁺-ATPase. The ATPase activity was not changed by adding NaCl and KCl to the assay solutions, but was increased by NH, especially by ammonium sulfate. In vivo stimulation of ATPase activity was observed by the addition of NaCl into the culture medium, as observed in Z. rouxii. No in vivo activation of H⁺-ATPase by glucose metabolism was observed in C. versatilis cells and the activity was independent of the growth phase, like Z. rouxii and unlike S. cerevisiae cells.     

A 0.8-μm CMOS 2.5 Gb/s oversampling receiver and transmitter forserial links

A receiver targeting OC-48 (2.488 Gb/s) serial data link has been designed and integrated in a 0.8-μm CMOS process. An experimental receiving front-end circuit demonstrates the viability of using multiple phased clocks to overcome the intrinsic gate-speed limitations in the demultiplexing (receiving) and multiplexing (transmitting) of serial data. To perform clock recovery, data is 3× oversampled so that transitions can be detected to determine bit boundaries. The design of a transmitter for the high-speed serial data is also described. The complete transceiver occupies a die area of ~3×3 mm²     

A real-time motion estimation and compensation LSI with wide searchrange for MPEG2 video encoding

This paper presents a motion estimation and compensation large scale integration (LSI) for the MPEG2 standard. An embedded RISC processor and special hardware modules enable the LSI to achieve a sufficient ability to perform real-time operation and provide the availability to realize many kinds of block matching algorithms. Using a three-step hierarchical telescopic search algorithm, a single chip accomplishes real-time motion estimation with search ranges of ±32.5×±32.5 pixels for motion vectors. The chip was fabricated using 0.5-μm CMOS technology and has an area of 16.5×16.5 mm² and 2.0 M transistors     

An experimental 1.5-V 64-Mb DRAM

Low-voltage circuit technologies for higher-density dynamic RAMs (DRAMs) and their application to an experimental 64-Mb DRAM with a 1.5-V internal operating voltage are presented. A complementary current sensing scheme is proposed to reduce data transmission delay. A speed improvement of 20 ns was achieved when utilizing a 1.5-V power supply. An accurate and speed-enhanced half-V_CC voltage generator with a current-mirror amplifier and tri-state buffer is proposed. With it, a response time reduction of about 1.5 decades was realized. A word-line driver with a charge-pump circuit was developed to achieve a high boost ratio. A ratio of about 1.8 was obtained from a power supply voltage as low as 1.0 V. A 1.28 μm² crown-shaped stacked-capacitor (CROWN) cell was also made to ensure a sufficient storage charge and to minimize data-line interference noise. An experimental 1.5 V 64 Mb DRAM was designed and fabricated with these technologies and 0.3 μm electron-beam lithography. A typical access time of 70 ns was obtained, and a further reduction of 50 ns is expected based on simulation results. Thus, a high-speed performance, comparable to that of 16-Mb DRAMs, can be achieved with a typical power dissipation of 44 mW, one tenth that of 16-Mb DRAMs. This indicates that a low-voltage battery operation is a promising target for future DRAMs     

High repetition rate, wide-aperture KrF lasers for subpicosecondamplification

A high repetition rate, wide-aperture KrF laser with a magnetic switch has been developed. A dynamic response and a core loss of several magnetic materials were measured, resulting in a loss as low as 0.45 J/pulse for a voltage risetime of ~100 ns. A maximum output energy of 2.5 J in 20 ns (FWHM) was obtained with a total efficiency of 2.5% at 20 Hz. The cross section of the output beam was 65×50 mm². Spectral, spatial, and temporal profiles of gain and absorption coefficients were also measured, resulting in a peak gain of 8.5%/cm. An output energy of 410 mJ was extracted in 280 fs with two beams by using this laser as an amplifier