Optical bistability and set-reset operation of a Fabry-Perotsemiconductor laser amplifier with two detuned light injections

Optical bistability in a Fabry-Perot semiconductor laser amplifier when two optical inputs detuned from the resonant wavelength of a semiconductor laser amplifier are injected is discussed. A split branch is found in the optical output versus input characteristics in addition to conventional optical bistability behavior. It is shown analytically and experimentally that set and reset can be achieved in the optical output of the semiconductor laser amplifier for each wavelength by applying two detuned optical pulses and using the split branch     

A novel ferromagnetic thermo-stent for plaque stabilization that self-regulates the temperature

The purpose of this study is to investigate the vascular wall with a thermally self-regulating, cylindrical stent made of a low Curie temperature ferromagnetic alloy. Physiologic saline was circulated in the silicone model vessel implanted with the stent. The stent-temperature remained nearly constant for variable saline flows, saline temperatures, and magnetic flux densities. Stent implants of this type in human blood vessels could potentially enable thermotherapy and temperature determination without catheterization.     

Performance analysis of variable optical delay circuit using highly nonlinear fiber parametric wavelength converters

The performance of a variable optical delay circuit that employs a fiber loop with highly nonlinear fiber parametric wavelength converters is discussed using both experiments and simulations. In our optical delay circuit, the delay time is determined from the number of circulations, which is controlled by the initially selected wavelength of the optical signal. We discuss the factors that limit the number of circulations described in our previous paper, derive the parameters that provide good performance levels, and confirm the performance by simulation. The simulated results indicate that 100 wavelength conversions can be achieved, namely, 100 different delay times can be given to optical packets.     

Fibre Bragg grating compression-tuned over 110 nm

A fibre Bragg grating with a tuning range covering beyond the C- and L-bands has been realised, which represents the broadest tuning range reported of any Bragg grating. The device exhibits constant spectral response and polarisation mode dispersion within these bands.     

Chaos control and noise suppression in external-cavitysemiconductor lasers

Feedback-induced chaos and intensity noise enhancement in a laser diode with external optical feedback are studied by computer simulations. The enhancement of relative intensity noise (RIN) that is often observed in experiments is considered as a result of the feedback-induced deterministic chaos and the intensity noise suppression is treated from the viewpoint of chaos control. Especially, the conventional noise suppressing technique known as a high-frequency injection modulation is turned into a problem of stabilizing chaos through parameter modulations. We developed an analytical method which allows to optimize the modulation frequency from the linear stability analysis of the dynamical model that describes the laser diode with external feedback. The robustness of the modulation with respect to the modulation frequency and depth is verified and the results suggest the feasibility of applying our method to actual noise suppression. The RIN in the low-frequency region (up to 100 MHz) is shown to be reduced to the solitary laser level when the feedback-induced chaos is effectively controlled with the optimized modulation frequency     

A design technique for a high-gain, 10-GHz class-bandwidth GaAsMESFET amplifier IC module

A design procedure is proposed for a high-gain and wideband IC module, using stability analysis and a unified design methodology for ICs and packages. A multichip structure is developed using stability analysis and the requirements for stable operation are determined for each IC chip, package, and interface condition between them. Furthermore, to reduce the parasitic influences, several improvements in the interface and package design are clarified, such as wideband matching and LC resonance damping. IC design using effective feedback techniques for enlarging the bandwidth are also presented. The ICs are fabricated using 0.2-μm GaAs MESFET IC technology. To verify the validity of these techniques, an equalizer IC module for 10-Gb/s optical communication systems was fabricated, achieving a gain of 36 dB and a bandwidth of 9 GHz     

A 0.65-ns, 72-kb ECL-CMOS RAM macro for a 1-Mb SRAM

An ultrahigh-speed 72-kb ECL-CMOS RAM macro for a 1-Mb SRAM with 0.65-ns address-access time, 0.80-ns write-pulse width, and 30.24-μm ² memory cells has been developed using 0.3-μm BiCMOS technology. Two key techniques for achieving ultrahigh speed are an ECL decoder/driver circuit with a BiCMOS inverter and a write-pulse generator with a replica memory cell. These circuit techniques can reduce access time and write-pulse width of the 72-kb RAM macro to 71% and 58% of those of RAM macros with conventional circuits. In order to reduce crosstalk noise for CMOS memory-cell arrays driven at extremely high speeds, a twisted bit-line structure with a normally on MOS equalizer is proposed. These techniques are especially useful for realizing ultrahigh-speed, high-density SRAM's, which have been used as cache and control storages in mainframe computers     

The effects of a detuned optical input on bistable laser diodeswith inhomogeneous current injection

The effects of an external optical input on a bistable laser diode (BLD) with inhomogeneous current injection are discussed. The bistable behavior of optical output versus injection current is shown to be variously modified, depending on the wavelength and power of the optical input. Optical set and reset operations and optical logic achieved by optical input pulses can be explained by these characteristics of a BLD modified by an external optical signal. Analysis using rate equations is also offered to help interpretation of experimental results, as well as the optical output and the bias current injected into the BLD     

Improvement of responsivity of high-speed infrared detector using hot carriers in semiconductors

A room temperature, high-speed and high-sensitive infrared hot carrier detector using p-type Ge has been investigated at 10.6 μm. The detector is composed of a whisker antenna and a diode contact forming an ohmic contact on p-type Ge. This detector has the merit that one can easily have impedance matching between the antenna and the diode contact without any matching section, so that high sensitivity can be obtained. A voltage sensitivity 16 dB higher than that of metal-insulator-metal (MIM) point contact diode has been observed from this detector.