Catalyst Design of Pt-Modified Ni/Al2O3 Catalyst with Flat Temperature Profile in Methane Reforming with CO2 and O2

Pt(0.3)/Ni(10)/Al₂O₃, prepared by a sequential impregnation method, exhibited a more excellent performance in methane reforming with CO₂ and O₂ in terms of the catalytic activity and the temperature profile of the catalyst bed than Pt(0.3) + Ni(10)/Al₂O₃ prepared by a coimpregnation method, Ni(10)/Al₂O₃, Pt(0.3)/Al₂O₃, and Pt(10)/Al₂O₃. It is thought that this is because the surface Pt atoms on Ni catalyst can contribute to the enhancement of the catalyst reducibility.     

Relation between crystal structure and lattice oxygen content of sintered reaction-bonded silicon nitride

When reaction-bonded silicon nitride containing MgO/Y₂O₃ additives is sintered at three different temperatures to form sintered reaction-bonded silicon nitride (SRBSN), the thermal conductivity increases with sintering temperature. The β-Si₃N₄ (silicon nitride) crystals of SRBSN ceramics were synthesized and characterized to investigate the relation between the crystal structure and the lattice oxygen content. The hot-gas extraction measurement result and the crystal structure obtained using Rietveld analysis suggested that the unit cell size of the β-Si₃N₄ crystal increases with the decrease in the lattice oxygen content. This result is reasonable considering that the lattice oxygen with the smaller covalent radius substitutes nitrogen with the larger one in the β-Si₃N₄ crystals. The lattice oxygen content decreased with increasing sintering temperature which also correlated with increase in thermal conductivity. Moreover, it is noteworthy from the viewpoint that it may be possible to apply the lattice constant analysis for the nondestructive and simple measurement of the lattice oxygen content that deteriorates the thermal conductivity of the β-Si₃N₄ ceramics.     

Effect of strain rate on compressive behavior of a Pd40Ni40P20 bulk metallic glass

Mechanical deformation of Pd₄₀Ni₄₀P₂₀ was characterized in compression over a wide strain rate range (3.3×10⁻⁵ to 2×10³ s⁻¹) at room temperature. The compression sample fractured with a shear plane inclined 42 degree with respect to the loading axis, in contrast to 56 degree for the case of tension. This suggests the yielding of the material deviates from the classical von Mises yield criterion, but follows the Mohr-Coulomb yield criterion. Fracture stress as well as strain was found to decrease with increasing applied strain rate. The compressive stress (1.74 GPa) was also found to be higher than the tensile fracture stress at a quasi-static strain rate. Close examination of the stress–strain curves revealed that localized shear might have occurred at a compressive stress of about 1.4 GPa, much lower than the “apparent” yield stress of 1.74 GPa. However, the stress of 1.4 GPa for shear band initiation is almost the same as the fracture stress measured at a dynamic strain rate of 5×10² s⁻¹. These results suggested that the fracture of a bulk metallic glass is sensitive to the applied loading rate.     

Microstructure development of steel during severe plastic deformation

The microstructure development during plastic deformation was reviewed for iron and steel which were subjected to cold rolling or mechanical milling (MM) treatment, and the change in strengthening mechanism caused by the severe plastic deformation (SPD) was also discussed in terms of ultra grain refinement behavior. The microstructure of cold-rolled iron is characterized by a typical dislocation cell structure, where the strength can be explained by dislocation strengthening. It was confirmed that the increase in dislocation density by cold working is limited at 10¹⁶m⁻², which means the maximum hardness obtained by dislocation strengthening is HV3.7 GPa. However, the iron is abnormally work-hardened over the maximum dislocation strengthening by SPD of MM because of the ultra grain refinement caused by the SPD. In addition, impurity of carbon plays an important role in such grain refinement: the carbon addition leads to the formation of nano-crystallized structure in iron.     

Difference between mechanical alloying and mechanical disordering in the amorphization reaction of Al50Ta50 in a rod mill

Amorphous Al₅₀Ta₆₀ alloy powders have been synthesized by mechanical alloying (MA) from elemental powders of aluminium and tantalum, and mechanical disordering (MD) from crystalline intermetallic compound powders of AlTa respectively using the rod milling technique. The mechanically alloyed and the mechanically disordered alloy powders were characterized by X-ray diffraction, scanning electron microscopy, electron probe microanalysis, transmission electron microscopy, differential thermal analysis, differential scanning calorimetry and chemical analysis. The results have shown that the crystal-to amorphous transformation in the MD process occurs through one stage, while the crystallineto-amorphous formation in the MA process occurs through three stages. At the early and intermediate stages of the MA time, heating the alloy powders to 700 K leads to the formation of an amorphous phase by a solid-state amorphizing reaction. At the final stage of the MA time, the amorphous phase is crystallized through a single sharp exothermic peak. Contrary to this, amorphous alloy powders produced by MD are crystallized through two broad exothermic peaks.     

Mechanical strengthening of Si cantilever by chemical KOH etching and its surface analysis by TEM and AFM

Mechanical strengthening of a Si cantilever by applying KOH wet etching was investigated. Two kinds of Si cantilever specimens having the different crystallographic orientations of the sidewall surfaces, i.e., Si{100} and Si{110}, were fabricated from the same SOI wafer by a Bosch process. The typical height and pitch of the scalloping formed on the sidewall were 248 and 917 nm, respectively. A 50 % KOH (40 °C) chemical wet etching was applied to increase the fracture stress of the Si cantilever. The fracture stress in the both of Si{100} and Si{110} cantilevers increased with the advance of the etching. The obtained maximum fracture stress in Si{100} and Si{110} were 4.2 and 3.7 GPa, respectively. Sidewall surface of the cantilever was analyzed to investigate the mechanical strengthening of Si cantilever by wet etching. The etched surface crystalline was analyzed by the transmission electron microscope (TEM), and confirmed that the thickness of the affected flow layer was less than 10 nm from the obtained TEM image. Then the change of the surface roughness by the KOH etching was analyzed by the atomic force microscope. The surface was smoothened with the advance of the KOH etching. The roughness value of Ra in Si{100} and Si{110} decreased to 12.1 and 37.7 nm, respectively.     

A new optical elasticity resin for mobile LCD modules

Abstract— The display used in current cell phones has an air gap between the cover glass and the liquid‐crystal‐display (LCD) module to prevent the LCD glass from being damaged. Reflections at the boundaries of the air gap cause a reduction in the LCD luminance and contrast. To address this problem, a newly proposed LCD structure has been investigated. The “Super View Resin (SVR),” a transparent elastic resin which improves the shock resistance and visibility of the LCD, has been developed. Filling the air gap between the cover glass and LCD module with a refractive‐index‐matching resin solves the light‐reflection problem inherent in the use of a reinforced cover‐glass lens. Moreover, the elastic filler works as a damper, reducing any external shock, which prevents not only the cover glass and LCD module from being damaged, but also the glass from being shattered when it is broken.     

Current control of a PWM power amplifier by an approximate 2-degree-of-freedom digital controller

There is a need for robust current control of a pulse width modulation (PWM) power amplifier whose transient response characteristics do not deteriorate with extensive load changes and/or direct-current power supply voltage changes. In this article, we propose a digital robust controller with bumpless mode switching to control the current of a PWM power amplifier to satisfy the demands and extend the range of an inductive load width. It is necessary to measure the value of the load in order to implement this bumpless mode switching automatically depending on the load range. Therefore, a method of estimating the inductive load is shown. The bumpless mode switching is automatically performed by estimating an inductive value without specifying the value of the inductive load beforehand. That is, the value of the inductive load is estimated during the DDC execution, and the control mode is automatically switched bumplessly according to this estimated value. A digital controller equipped with inductance estimation and bumpless mode switching is realized by a DSP. Some experiments show that the digital controller with the proposed bumpless mode switching can satisfy larger specifications.     

Magnetic order and evolution of the electronic state aroundx=0.12 in La2?xBaxCuO4 and La2?xSrxCuO4

Muon spin rotation ( ⁺SR) measurement provides clear evidence of the antiferromagnetic order of Cu moments below 35 K for La_2–x Ba _x CuO₄ and below 15 K for La_2–x Sr _x CuO₄ in the narrow range ofx where the high-T _c superconductivity (SC) is suppressed remarkably. The results suggest that the change of the electronic state coupled with the lattice instability is relevant to the local suppression of SC and freezing of spin fluctuations of the Cu moment.     

TMN implementation strategy based on OSI management standards

In order to facilitate the implementations ofTMN interface protocols/services studied inITU-T, it is very important to define profiles for supportingTMN management service. This paper proposes a concrete method for achieving this based on osi management standards as a promisingTMN implementation method. It proposes an idea of structuring theTMN ISP’S based on the structure of the osi managementISP’S. The paper discusses aTMN based on the osi managementISP’S. Finally the implementation as software is discussed and a software architecture for efficient application development is proposed.