Photorefractive device using self-assembled monolayer coated indium-tin-oxide electrodes

Photorefractive (PR) performances of methyl-substituted poly(triarylamine) (PTAA)-based PR device were demonstrated using chemically modified electrodes (CMEs) of self-assembled monolayer (SAM) coated indium-tin-oxide (ITO) electrodes. The SAM-ITO electrodes successfully suppressed dark current which blocks the formation of space-charge field and also causes the dielectric breakdown. The PR device consisted of composite of PTAA, 4-azacycloheptylbenzylidenemalononitrile (7-DCST), N-ethylcarbazole (ECz), and [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) sandwiched between the SAM-ITO electrodes. The PR devices showed the PR performances: optical gain Γ, refractive index Δn, diffraction efficiency η, response time τ, sensitivity S, phase shift Φ, trap-limited field E_q, number density of traps N_T, and space-charge field E_SC. The remarkable response time of 11.3 ms was achieved at the low electric field of 20 V μm⁻¹, which was comparable to the response time of high-definition television (HDTV) quality of 16 ms. Our approach will widen the usage of higher mobility materials to photorefractive field and give us more favorable materials to achieve the best performance of photorefractivity in the future.     

Photoluminescence characteristics and pit formation of InGaN/GaN quantum-well structures grown on sapphire substrates by low-pressure metalorganic vapor phase epitaxy

We have examined how a growth interruption, caused by closing group-III sources, affects the crystalline quality of InGaN/GaN quantum-well (QW) structures grown by metalorganic vapor phase epitaxy. The QW samples were characterized by their photoluminescence (PL), and by atomic force microscopy (AFM), transmission electron microscopy (TEM), and energy dispersive x-ray (EDX) microanalysis. The PL peak wavelength was strongly dependent on the duration of the growth interruption and on the number of QW layers. AFM measurements revealed that the size of the open hexagonally shaped pits in the QW structures increased dramatically as the interruption duration was lengthened. Through TEM and EDX microanalysis, we found that the formation of these hexahedronal pits, formed due to the growth interruption, causes a large fluctuation in the In composition, especially around the pits, and the presence of such pits in an underlying QW layer strongly affects the In incorporation into the upper QW layers, leading to significant growth-rate variation in an InGaN QW layer and red-shifting of the PL spectra when a multiple-QW structure is grown.     

Analog Circuit Design Methodology in a Low Power RISC Microprocessor

There are various kinds of analog CMOS circuits in microprocessors. IOs, clock distribution circuits including PLL, memories are the main analog circuits. The circuit techniques to achieve low power dissipation combined with high performance in newest prototype chip in the Super H RISC engines are described. A TLB delay can be decreased by using a CAM with a differential amplifier to generate the match signal. The accelerator circuit also helps to speed up the TLB circuit, enabling single-cycle operation. A fabricated 96-mm² test chip with the super H architecture using 0.35-m four metal CMOS technology is capable of 167-MHz operation at 300 Dhrystone MIPS with 2.0-W power dissipation.     

Transport-Coefficient Dependence of Current-Induced Cooling Effect in a Two-Dimensional Electron Gas

The dependence of the current-induced cooling effect on the electron mobility??? _e is explored for a two-dimensional electron gas (2DEG) subjected to a perpendicular magnetic field. We calculate the distributions of the electrochemical potentials and the temperatures under a magnetic field, fully taking account of thermoelectric and thermomagnetic phenomena. Whereas the electrochemical potential and the electric current remain qualitatively unchanged, the temperature distribution exhibits drastic mobility dependence. The lower-mobility system has cold and hot areas at opposite corners, which results from the heat current brought about by the Ettingshausen effect in the vicinity of the adiabatic boundaries. The cooling effect is intensified by an increase in??? _e. Intriguingly, the cold and hot areas change places with each other as the mobility??? _e is further increased. This is because the heating current on the adiabatic edges due to the Righi?CLeduc effect exceeds that due to the Ettingshausen effect in the opposite direction.     

Assessing material qualities and efficiency limits of III–V on silicon solar cells using external radiative efficiency

The paper presents a quantitative approach to the investigation and comparison of the material qualities of III–V on silicon (III–V/Si) solar cells by using external radiative efficiencies. We use this analysis to predict the limiting efficiencies and evaluate the criteria of material quality in order to achieve high‐efficiency III–V/Si solar cells. This result yields several implications for the design of high‐efficiency III–V/Si solar cells. Copyright © 2016 John Wiley & Sons, Ltd.     

Detection of characteristic signals from as-doped (<1 at.%) regions of silicon by transmission electron microscopy and convergent-beam electron diffraction

Characteristic signals were detected from As-doped (< 1 at.%) regions of silicon by dark-field transmission electron microscopy and convergent-beam electron diffraction. A slight intensity increase was observed in 220 dark-field images, which may be explained by an increase of scattering amplitude due to the As doping. The doped region showed a much higher intensity in 004 dark-field images. The characteristic high intensity was observed for specimens with As concentrations of about 0.09-0.8 at.%. Convergent-beam electron diffraction patterns obtained from the As-doped region showed a characteristic rocking curve for 004 reflection. These characteristics should originate from incoherent elastically scattered electrons due to a static lattice distortion around the doped As atoms. The observed characteristics in dark-field images and rocking curves of the 004 reflection should be a good probe not only for investigating the concentration of doped atoms in Si lattice, but also for the amount of impurity and/or point defects in other crystalline materials.     

Mimic Drug Dosage Modulation for Neuroplasticity Based on Charge-Trap Layered Electronics

The human brain is often likened to an incredibly complex and intricate computer, rather than electrical devices, consisting of billions of neuronal cells connected by synapses. Different brain circuits are responsible for coordinating and performing specific functions. The reward pathway of the synaptic plasticity in the brain is strongly related to the features of both drug addiction and relief. In the current study, a synaptic device based on layered hafnium disulfide (HfS₂) is developed for the first time, to emulate the behavioral mechanisms of drug dosage modulation for neuroplasticity. A strong gate-dependent persistent photocurrent is observed, arising from the modulation of substrate-trapping events. By controlling the polarity of gate voltage, the basic functions of biological synapses are realized under a range of light spiking conditions. Furthermore, under the control of detrapping/trapping events at the HfS₂/SiO₂ interface, positive/negative correlations of the A_n/A₁ index, which significantly reflected the weight change of synaptic plasticity, are realized under the same stimulation conditions for the emulation of the drug-related addition/relief behaviors in the brain. The findings provide a new advance for mimicking human brain plasticity.     

Conceptual design of rain radar for the tropical rainfall measuring mission

Specifications for a spaceborne rain radar for tropical rainfall measurement are described. A spaceborne rain radar has problems peculiar to rain observation from space. The radar must have a fast scanning mechanism to cover a large swath. Very weak rain echoes compared to the sea or land surface signal must be detected. These capabilities must be attained under the severe power consumption and mass limitations of the satellite bus. The fast scanning requirement forces application of an electrically scanning mechanism. This requirement also causes a severe limitation of the available number of independent samples. The requirement for weak rain echoes excludes application of the pulse compression technique, which is a very conventional technique for other active microwave sensors on board satellites. Under these constraints, a rain radar with an electrically scanning planar antenna at 13-8 GHz is proposed.     

Structural advantages of rectangular-like channel cross-section on electrical characteristics of silicon nanowire field-effect transistors

We have experimentally demonstrated structural advantages due to rounded corners of rectangular-like cross-section of silicon nanowire (SiNW) field-effect transistors (FETs) on on-current (I_ON), inversion charge density normalized by a peripheral length of channel cross-section (Q_inv) and effective carrier mobility (μ_eff). The I_ON was evaluated at the overdrive voltage (V_OV) of 1.0 V, which is the difference between gate voltage (V_g) and the threshold voltage (V_th), and at the drain voltage of 1.0 V. The SiNW nFETs have revealed high I_ON of 1600 μA/μm of the channel width (w_NW) of 19 nm and height (h_NW) of 12 nm with the gate length (L_g) of 65 nm. We have separated the amount of on-current per wire at V_OV = 1.0 V to a corner component and a flat surface component, and the contribution of the corners was nearly 60% of the total I_ON of the SiNW nFET with L_g of 65 nm. Higher Q_inv at V_OV = 1.0 V evaluated by advanced split-CV method was obtained with narrower SiNW FET, and it has been revealed the amount of inversion charge near corners occupied 50% of all the amount of inversion charge of the SiNW FET (w_NW = 19 nm and h_NW = 12 nm). We also obtained high μ_eff of the SiNW FETs compared with that of SOI planar nFETs. The μ_eff at the corners of SiNW FET has been calculated with the separated amount of inversion charge and drain conductance. Higher μ_eff around corners is obtained than the original μ_eff of the SiNW nFETs. The higher μ_eff and the large fractions of I_ON and Q_inv around the corners indicate that the rounded corners of rectangular-like cross-sections play important roles on the enhancement of the electrical performance of the SiNW nFETs.     

填充热丝激光窄间隙焊接的实验研究

将填充热丝应用到高光束质量、长焦距的光纤激光窄间隙焊接中,不锈钢母材通过激光加热,镍基焊丝通过电流加热,有效利用复合热源的优势,提高了焊丝过渡稳定性和熔覆效率。通过高速摄像机对送丝过程进行在线观察,分析工艺参数对焊丝过渡的影响。研究不锈钢和镍基合金异种金属窄间隙焊接接头的凝固组织,并对焊缝金属进行元素分布扫描。研究发现,由焊丝电流和送丝速度等工艺参数决定的送丝稳定性是影响填充热丝激光焊接质量的最主要因素。对于窄间隙焊接,采用与间隙宽度相当的离焦光斑激光热导焊,可形成较好的侧壁熔合,由熔融金属曲面和侧壁构成的激光反射是侧壁熔合的主要原因。焊缝冷却速度较快,焊缝金属的凝固组织呈明显的对生生长,在坡口侧壁附近其生长方向与侧壁近似垂直,焊缝不存在宏观偏析。在间隙底部直角处容易出现未熔合现象,采用底部圆弧过渡的U型坡口后,可较好地解决底部未熔合问题,获得了无宏观缺陷的焊接接头。