Zinc ion-imprinted polymer based on silica particles modified carbon paste electrodes for highly selective electrochemical determination of zinc ions

ABSTRACT

In this study, Zn(II) ion-imprinted polymer was prepared on the surface of vinyl silica particles and applied for detection of Zn(II) ions using differential pulse voltametry. The ion- imprinted polymer particles were prepared by free radical polymerization. The prepared particles were characterized by different morphological and elemental techniques. The ion-imprinted particles were used to fabricate the carbon paste electrode as a zinc ions sensor. The modified zinc sensor showed linear response in the concentration range 6.12 × 10^?9 to 4.59 × 10^?8 mol L^?1. The limit of detection and limit of quantification of the electrode were 1.351 × 10^?8 and 4.094 × 10^?8 mol L^?1, respectively.     

A reconfigurable microstrip cross parasitic antenna with complete azimuthal beam scanning and tunable beamwidth

In this article, a reconfigurable cross parasitic antenna is proposed to achieve complete azimuthal beam scanning and tunable beamwidth in the E‐ and H‐plane. The antenna consists of a square‐shaped driven element and four size‐tunable parasitic elements placed on each side of the driven element. Each tunable parasitic element is composed of a hexagonal slot loaded with two varactor diodes. The tunable parasitic element shows dual‐resonance behavior and hence its effective electrical size can be controlled with respect to the driven element. The radiated beam of the cross antenna is continuously scanned in the elevation plane from θ = 0° to 10.8°, 0° to 32.4°, and 0° to 40° in ? = (0°, 180°), (45°, 135°, 225°, 315°), and (90°, 270°) planes, respectively. Moreover, the 3‐dB beamwidth of the cross antenna is continuously tuned from 65° to 152° and from 64° to 116° in the E‐ and H‐plane, respectively. The antenna shows good impedance matching in all the operating modes with ?10 dB bandwidth from 2.43 to 2.47 GHz. A prototype of the antenna is fabricated to experimentally verify the simulated reflection and radiation characteristics.     

Synthesis and Characterization of ZnO/CuO Nanocomposites as an Effective Photocatalyst and Gas Sensor for Environmental Remediation

Journal of Inorganic and Organometallic Polymers and Materials - Current study delineates the synthesis and environmental applications of ZnO/CuO nanocomposite in photocatalysis and gas sensing....     

Enhancement in CO gas sensing properties of hydroxyapatite thick films: Effect of swift heavy ion irradiation

This paper investigates the effect of swift heavy ion (SHI) irradiation on surface morphology of Hydroxyapatite (HAp) thick films and modification in gas sensing characteristics. The HAp nanopowder is synthesized by wet chemical process and the thick films are prepared by screen printing technique. These films are irradiated with Ag⁷⁺ ions with energy of 100 MeV at different fluences ranging from 3 × 10¹⁰ to 3 × 10¹³ ions/cm². X-ray diffraction and atomic force microscopy tools are employed to examine the phase and surface modification in HAp thick films due to swift heavy ion irradiation. The ion irradiation study shows that crystallinity decreases and grain size changes with increase in ion fluence. A precise study on gas sensing is carried out to confirm operating temperature of HAp thick film sensor to detect CO gas. Saturation region of the film with increasing gas concentration and other parameters such as response and recovery time are also investigated from the point of view of using HAp films as a sensor device. SHI irradiated HAp thick film shows enhancement in the gas response and saturation limit for CO gas. Furthermore, the irradiated HAp film shows fast response and recovery time for CO gas. The study concludes that nanoceramic HAp thick film is an excellent CO gas sensor at an operating temperature of 195 °C.     

Electrical conductivity of LTA‐zeolite in the presence of poly(vinyl alcohol) and poly(vinyl pyrrolidone) polymers

In this work we studied the electrical behavior of Linde type A zeolite (K⁺) in the presence of two polymers, poly(vinyl alcohol) (PVA) and poly(vinyl pyrrolidone) (PVP), with excellent film forming properties. Homogeneous composite thin films of PVA/LTA‐zeolite and PVP/LTA‐zeolite were prepared with different zeolite concentrations. The current?voltage (I?V) characteristics of the composites were measured at different applied voltages. The results show that the conductivity properties are composition‐ratio‐dependent and are also related to the type of polymers. Moreover, a well‐defined step‐like change was detected in the I?V curve of PVP/LTA‐zeolite at very high applied voltage. © 2013 Society of Chemical Industry     

Thermopower of Semiconducting Glasses in the V2O5-P2O5 and V2O5-CdS-P2O5 Systems

Vanadium phosphate and cadmium sulfide-doped vanadium phosphate glasses containing up to 50–80 mol % V₂O₅ are prepared. The thermopower of these glasses is measured in the temperature range 303–473 K. The activation energies are determined from the linear dependences of the thermopower S and the logarithm of the conductivity logσ on the reciprocal of the temperature 1/T. It is demonstrated that the activation energies obtained by two methods differ from each other. The difference between the activation energies is referred to as the hopping energy Δ. The possibility of an Anderson metal-insulator transition occurring is examined. It is revealed that similar transitions are not observed in the glasses under investigation. The data obtained are analyzed within the small-polaron hopping model describing the electron conduction. It is established that hopping conduction proceeds over localized states in the tail of the density of states. All the glasses are characterized by electron conduction. Original Russian Text Copyright ? 2005 by Fizika i Khimiya Stekla, Khairnar, Yawale, Pakade.     

Structural and electrical characteristics of RF-sputtered HfO2 high-k based MOS capacitors

The HfO₂ high-k thin films have been deposited on p-type (1 0 0) silicon wafer using RF magnetron sputtering technique. The XRD, AFM and Ellipsometric characterizations have been performed for crystal structure, surface morphology and thickness measurements respectively. The monoclinic structured, smooth surface HfO₂ thin films with 9.45 nm thickness have been used for Al/HfO₂/p-Si metal-oxide-semiconductor (MOS) structures fabrication. The fabricated Al/HfO2/Si structure have been used for extracting electrical properties viz dielectric constant, EOT, barrier height, doping concentration and interface trap density through capacitance voltage and current-voltage measurements. The dielectric constant, EOT, barrier height, effective charge carriers, interface trap density and leakage current density are determined are 22.47, 1.64 nm, 1.28 eV, 0.93 × 10¹⁰, 9.25 × 10¹¹ cm⁻² eV⁻¹ and 9.12 × 10⁻⁶ A/cm² respectively for annealed HfO₂ thin films.     

Preparation of rare earth CeO<Subscript>2</Subscript> thin films using metal organic decomposition method for metal-oxide–semiconductor capacitors

Investigation of metal organic decomposed rare earth cerium oxide thin films deposited on Si substrate by sol–gel spin coating technique was carried out. The structural properties have been examined by using XRD, Fourier transform infrared spectroscopy (FTIR), field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM). The XRD confirms the cubic phase of CeO₂ thin films with (111) plane observed at 28.54°. The FTIR and EDAX spectra confirm the formation of CeO₂ films with atomic percentage of 19.39 and 54.82% of Ce and O₂, respectively. Thickness of 60.11 nm of CeO₂ film measured by cross sectional FESEM image, the average roughness of ~0.6 nm of 400?°C annealed CeO₂ films were observed from AFM micrograph. The MOS capacitors were fabricated by using Ti/Au bilayer metal contact depositing by E-beam evaporator on CeO₂/Si thin film for electrical measurements. Capacitance and conductance voltage measurement was carried out to determine the effective oxide charges (Q_eff), interface trap density (D_it) and dielectric constant (k) and are 2.48?×?10¹² cm^?2, 1.26?×?10¹² eV^?1cm^?2 and ~39, respectively. The effective metal work function of 5.68 for Ti/Au bilayer is observed to be higher than the work function of Ti or Au metals in vacuum.