A smartphone‐based U‐Healthcare system for real‐time monitoring of acute myocardial infarction

In recent years, medical service has been evolving from systems designed around centralized hospitals to Ubiquitous Healthcare (U‐Healthcare). U‐Healthcare system can facilitate real‐time monitoring of patient states, and can provide medical checkups and management whenever and wherever the medical staff deems necessary. U‐Healthcare services can provide chronic condition monitoring in the early stages of diseases and help execute decisive medical action in emergencies. However, thus far, the application of U‐Healthcare systems has been limited to diseases such as obesity, diabetes, etc. Acute myocardial infarction (AMI) is among the most critical chronic diseases and requires early detection and treatment. In this paper, we propose an AMI diagnostic software technique and protocol that can support real‐time communication between the patient and medical personnel. Our monitoring and diagnostic system has been developed using a protocol based on ISO/IEEE 11073. When data is transferred from the patient's smartphone to a server in hospital, the medical personnel consult the patient's biosensor data to determine the status of the relevant disease and provide appropriate medical service. The relevant information is sent back to the patient's smartphone through a wireless network, and patients can view their data in graphical format through their smartphone. Copyright © 2015 John Wiley & Sons, Ltd.     

Delayed self-heterodyne linewidth measurement of VCSELs

We report on high-resolution linewidth measurements of proton-implanted InGaAs-GaAs VCSELs employing the delayed self-heterodyne method. Devices with 16-/spl mu/m active diameter exhibit record low linewidths of 20 MHz and 4-MHz residual linewidth. The linewidth enhancement factor is accurately determined from the ratio of induced phase to amplitude modulation indexes.     

Binary blends of nylons with ethylene vinyl alcohol copolymers: Morphological,thermal, rheological,and mechanical behavior

Binary blends of ethylene vinyl alcohol copolymers, containing 62 (EVOH-62) and 71 (EVOH-71) mole percent vinyl alcohols, with nylons (nylon-6, nylon-6/12, and nylon-12) have been prepared from melt mixing in a twin screw compounding machine. Morphological, thermal, rheological, and mechanical properties were determined. EVOH-62/nylon-6 and EVOH-71/nylon-6 blends showed homogeneous phase morphologies in the nylon-6-rich region, and fine phase separations (c.a. 2 × 10^?7 m) in the EVOH-rich region. Melting point depression, positive deviations in viscosity and flexural modulus, and negative deviation in impact strength from the simple additive rule were generally observed. And the results were possibly interpreted in terms of compatibility and increased nylon/EVOH interactions over the nylon/nylon interactions. On the contrary, clean phase separations in large domains were observed from EVOH-71/nylon-6/12 and EVOH-71 /nylon-12 blends. Fibrillation was also obtained from EVOH rich blends. Probably due to the incompatible nature of these blends, yield at low rate of shear and a mechanical property drop were also observed.     

Design and Architecture of Low‐Latency High‐Speed Turbo Decoders

In this paper, we propose and present implementation results of a high‐speed turbo decoding algorithm. The latency caused by (de)interleaving and iterative decoding in a conventional maximum a posteriori turbo decoder can be dramatically reduced with the proposed design. The source of the latency reduction is from the combination of the radix‐4, center to top, parallel decoding, and early‐stop algorithms. This reduced latency enables the use of the turbo decoder as a forward error correction scheme in real‐time wireless communication services. The proposed scheme results in a slight degradation in bit error rate performance for large block sizes because the effective interleaver size in a radix‐4 implementation is reduced to half, relative to the conventional method. To prove the latency reduction, we implemented the proposed scheme on a field‐programmable gate array and compared its decoding speed with that of a conventional decoder. The results show an improvement of at least five fold for a single iteration of turbo decoding.     

Analysis of issues in gate recess etching in the InAlAs/InGaAs HEMT manufacturing process

We have developed an InAlAs/InGaAs metamorphic high electron mobility transistor device fabrication process where the gate length can be tuned within the range of 0.13 μm–0.16 μm to suit the intended application. The core processes are a two-step electron-beam lithography process using a three-layer resist and gate recess etching process using citric acid. An electron-beam lithography process was developed to fabricate a T-shaped gate electrode with a fine gate foot and a relatively large gate head. This was realized through the use of three-layered resist and two-step electron beam exposure and development. Citric acid-based gate recess etching is a wet etching, so it is very important to secure etching uniformity and process reproducibility. The device layout was designed by considering the electrochemical reaction involved in recess etching, and a reproducible gate recess etching process was developed by finding optimized etching conditions. Using the developed gate electrode process technology, we were able to successfully manufacture various monolithic microwave integrated circuits, including low noise amplifiers that can be used in the 28 GHz to 94 GHz frequency range.     

GPS‐Based Orbit Determination for KOMPSAT‐5 Satellite

Korea Multi‐Purpose Satellite‐5 (KOMPSAT‐5) is the first satellite in Korea that provides 1 m resolution synthetic aperture radar (SAR) images. Precise orbit determination (POD) using a dual‐frequency IGOR receiver data is performed to conduct high‐resolution SAR images. We suggest orbit determination strategies based on a differential GPS technique. Double‐differenced phase observations are sampled every 30 seconds. A dynamic model approach using an estimation of general empirical acceleration every 6 minutes through a batch least‐squares estimator is applied. The orbit accuracy is validated using real data from GRACE and KOMPSAT‐2 as well as simulated KOMPSAT‐5 data. The POD results using GRACE satellite are adjusted through satellite laser ranging data and compared with publicly available reference orbit data. Operational orbit determination satisfies 5 m root sum square (RSS) in one sigma, and POD meets the orbit accuracy requirements of less than 20 cm and 0.003 cm/s RSS in position and velocity, respectively.     

Resistive switching characteristics of ultra-thin TiOx

We investigated the resistive switching characteristics of Ir/TiO_x/TiN structure with 50 nm active area. We successfully formed ultra-thin (4 nm) TiO_x active layer using oxidation process of TiN BE, which was confirmed by X-ray Photoelectron Spectroscopy (XPS) depth profiling. Compared to large area device (50 μm), which shows only ohmic behavior, 250 and 50 nm devices show very stable resistive switching characteristics. Due to the formation and rupture of oxygen vacancies induced conductive filament at Ir and TiO_x interface, bipolar resistive switching was occurred. We obtained excellent switching endurance up to 10⁶ times with 100 ns pulse and negligible degradation of each resistance state at 85 °C up to 10⁴ s.     

Photocurable propyl-cinnamate-functionalized polyhedral oligomeric silsesquioxane as a gate dielectric for organic thin film transistors

A polyhedral oligomeric silsesquioxane (POSS)-based insulating material with photocurable propyl-cinnamate groups (POSS-CYNNAM) was designed and synthesized through simple single step reaction for use as a gate dielectric in organic thin-film transistors (OTFT). POSS-CYNNAM was soluble in common organic solvents and formed a smooth thin film after spin-casting. A thin film of POSS-CYNNAM was cross-linked and completely solidified under UV irradiation without the use of additives such as photoacid generators or photoradical initiators. ITO/insulator/Au devices were fabricated and characterized to measure the dielectric properties of POSS-CYNNAM thin films, such as leakage current and capacitance. A pentacene-based OTFT using the synthesized insulator as the gate dielectric layer was fabricated on the transparent indium tin oxide (ITO) electrode, and its performance was compared to OTFTs using thermally cross-linked poly(vinyl phenol) (PVP) as the insulator. The fabricated POSS-CYNNAM OTFT showed a comparable performance to devices based on the PVP insulator with 0.1 cm²/Vs of the field effect mobility and 4.2 × 10⁵ of an on/off ratio.     

Luminescence,charge mobility,and optical waveguiding of two-dimensional organic rubrene nanosheets: Comparison with one-dimensional nanorods

Intrinsic characteristics of organic and inorganic nanostructures depend on their physical dimensions (i.e., size and shape) and crystallinity. Here, we compared the nanoscale optical and electrical properties of organic rubrene one-dimensional (1-D) nanorods (NRs) and two-dimensional (2-D) nanosheets (NSs). From high-resolution laser confocal microscope photoluminescence (PL) measurements, the light-emission characteristics of 2-D rubrene NSs varied with the crystalline domain direction, indicating intrinsic PL anisotropy, which was distinguishable from 1-D rubrene single NRs, because of anisotropy π–π stacking molecular arrangements. We also observed the variation of charge carrier mobility depending on the measured directions (i.e., anisotropy of charge transport) in rubrene NS-based field-effect transistors. The optical waveguiding properties of rubrene nanostructures were strongly correlated to the dimensionality of materials and PL anisotropy.     

Ultrafast Responsive Non‐Volatile Flash Photomemory via Spatially Addressable Perovskite/Block Copolymer Composite Film

The exotic photophysical properties of organic–inorganic hybrid perovskite with long exciton lifetimes and small binding energy have appeared as promising front‐runners for next‐generation non‐volatile flash photomemory. However, the long photo‐programming time of photomemory limits its application on light‐fidelity (Li‐Fi), which requires high storage capacity and short programming times. Herein, the spatially addressable perovskite in polystyrene‐block‐poly(ethylene oxide) (PS‐b‐PEO)/perovskite composite film as an photoactive floating gate is demonstrated to elucidate the effect of morphology on the photo‐responsive characteristics of photomemory. The chelation between lead ion and PEO segment promotes the anti‐solvent functionalities of the perovskite/PS‐b‐PEO composite film, thus allowing the solution‐processable poly(3‐hexylthiophene‐2,5‐diyl) (P3HT) to act as the active channel. Through manipulating the interfacial area between perovskite and P3HT, fast photo‐induced charge transfer rate of 0.056 ns^?1, high charge transfer efficiency of 89%, ON/OFF current ratio of 10⁴, and extremely low programming time of 5 ms can be achieved. This solution‐processable and fast photo‐programmable non‐volatile flash photomemory can trigger the practical application on Li‐Fi.