Copper(II) removal from aqueous solutions by fly ash

The removal of Cu(II) by adsorption on fly ash has been found to be concentration, pH and temperature dependent. The kinetics of adsorption indicates the process to be diffusion controlled. The Langmuir constants have been calculated at different temperatures, and the adsorption has been found to be endothermic (ΔH = 15.652 kcal mol^?1). The maximum removal is observed at pH 8.0, and variation in adsorption with pH has been explained on the basis of surface ionisation and complexation.     

Deoxidation with silicon and the control of oxide inclusions in electrical steels

The oxygen solubility in Fe-Si melts in equilibrium with SiO₂ at 1873 K has been determined in a concentration range of 0.1–70 wt % Si. Model alloys are melted in quartz crucibles in an argon atmosphere. The oxygen content in analytical samples is determined by the inert-gas reducing-fusion method after careful sample preparation. The results obtained have been processed using a thermodynamic model that can calculate the oxygen activity and solubility in Fe-Si melts up to 100 wt % Si. The effects of the heating rate and the silicon content on the carbon concentration in carbonyl iron and Fe-Si alloys are studied using the inert-gas reducing-fusion method in the temperature range 1673–2373 K. Oriented electrical steels are investigated using fractional gas analysis. The main forms of oxygen in these steels are found to be silicates, Al₂O₃, and MgAl₂O₄.     

板载电源模块--开放式与封闭式的选择

目前,分布式电源架构被广泛用于通信和计算设备中,该电源架构经常采用板载电源(BMP)模块,在尽可能靠近负载点的地方进行电源变换.     

Wear Resistance of Coatings from Self‐Fluxing Alloys after Laser Doping under Dry Friction Conditions

The wear resistance of Ni–Cr–B–Si–C coatings after laser treatment with a doping covering under dry friction conditions has been investigated. The microstructure of coatings after fusion by a gas burner and a laser beam and the roughness and waviness parameters of the friction surfaces before and after wear have been investigated.     

Stress State of Bent Buried Pipelines

The authors consider edge effects in buried pipelines that occur in the region of joining of a straight buried pipe and a bent insert (factory bend, elbow, or an elastically bent segment). The action of those effects results in the appearance of additional bending moments, which are proportional to the difference between the axial force in an infinite straight pipeline and that in a closed-end pipe, and depend on the geometrical parameters of the pipeline and physical-mechanical characteristics of the soil. Specific examples of analysis of elastic interaction of a pipeline with the soil for pipe bends with various radii of the bend arc are offered. It is shown that additional bending stresses may exceed appreciably the stresses from the axial force, and therefore, they should be taken into account when designing and building pipelines. The solution for an elastically bent segment has been obtained and analyzed.     

Surface electronic states in metal-porous silicon-silicon structures

The character of electronic states in porous silicon (PS)-Si, Pd-PS interfaces, and/or PS bulk at the formation of the metal-PS-silicon heterostructure was studied. The energy parameters were estimated using the deep-level transient spectroscopy and capacitance-voltage characteristics at the accounting of the voltage drop distribution along the structure. The analytical expression for voltage drop distribution along dielectric layer, porous layer and space charge region in silicon was obtained by solving the equation for continuity of the electrostatic induction vector. The electronic states studied were shown to manifest the quasi-continuous sub-band in the energy gap if the porous layer was 30-nm thick. Their density increased, as the energy position was being transformed to a deeper energy level of E_v+0.81 eV at the PS layer growing to 90 nm wide.     

Noise modeling for RF CMOS circuit simulation

The RF noise in 0.18-/spl mu/m CMOS technology has been measured and modeled. In contrast to some other groups, we find only a moderate enhancement of the drain current noise for short-channel MOSFETs. The gate current noise on the other hand is more significantly enhanced, which is explained by the effects of the gate resistance. The experimental results are modeled with a nonquasi-static RF model, based on channel segmentation, which is capable of predicting both drain and gate current noise accurately. Experimental evidence is shown for two additional noise mechanisms: 1) avalanche noise associated with the avalanche current from drain to bulk and 2) shot noise in the direct-tunneling gate leakage current. Additionally, we show low-frequency noise measurements, which strongly point toward an explanation of the 1/f noise based on carrier trapping, not only in n-channel MOSFETs, but also in p-channel MOSFETs.     

Standardization of Technological Parameters for Drawing Optical Rods Using Experimental Models

A method for constructing experimental models of drawing optical rods based on experimental data is considered. The models obtained make it possible to identify admissible technological parameter fluctuations in the range selected.