All-optical discrimination based on nonlinear transmittance of MQWsemiconductor optical gates

This paper proposes an all-optical regenerator utilizing a novel all-optical discriminator. The impacts of nonlinearity of optical gates on discrimination performance are estimated. The evaluation of discrimination performance shows that amplified spontaneous emission noise and wave form distortion in optical signals can be effectively suppressed. We experimentally demonstrate the suppression using a low-temperature-grown optical switch up to 10 Gb/s     

Partial-response coding, maximum-likelihood decoding: capitalizing on the analogy between communication and recording - [History of communications]

Signal processing and coding technology for digital magnetic recording is the core technology of the channel electronics module in a hard disk drive (HDD) that processes signals read from magnetic media. In this historical review I focus on what is now widely known as partial-response, maximum-likelihood (PRML) technology, which takes advantage of the inherent redundancy that exists in signals read out of magnetic media; its theoretical foundation goes back to 1970, and it capitalizes on the analogy between high-speed data transmission and high-density digital recording, and that between a convolutional code and a partial-response signal. The first PRML-based product was introduced by IBM in 1990, and PRML technology soon became the industry standard for all digital magnetic recording products, ranging from computers' HDDs and tape drives to micro hard discs used in PCs, mobile phones, and MP3 players; use of the PRML principle has recently been extended to optical recording products such as CDs and DVDs. Its improved version, called NPML (noise-predictive, maximum-likelihood), and variants have been adopted by the HDD industry since 2000. Today, a large number of communication and information theory researchers are investigating use of advanced techniques such as turbo coding/decoding to further improve the density and reliability of both magnetic and optical recording systems.     

Repeater Fault Location for a Submarine Optical Fiber Cable Transmission System

This paper introduces a repeater fault location system for a repeated submarine optical fiber transmission system of 400 Mbits/ s at 1.3μm. The repeater fault location system is used in an out-of-service test. The fault locator transmits a test signal via a main optical fiber line, in order to make a loop-back path in one of the repeaters for returning the test signals via another main optical fiber line and to measure the bit error rate (BER) of the interrogated repeater. The test signal is a kind of pseudorandom signal that includes a low frequency component, which is assigned to the repeater as a supervisory frequency tone (SVT) signal. The BER is measured by counting the number of low frequency signal phase inversions in a time. This paper first describes the test signal generating method, SVT frequency allocation, and the filter design installed in a repeater. Next, there is a discussion of how the capability of the repeater fault locator has been experimentally verified by using two submarine repeaters, including four regenerative repeater units and three submarine optical fiber cables. As a result, a BER of less than5 times 10^{-6}is accurately measured.     

Atomistic origin of high-quality “novel SiON gate dielectrics”

We have investigated the effect of the oxygen incorporation into SiN films by the first principles calculations. The calculated results show that the oxygen incorporation tends to generate defect states in SiN band gap by forming dangling bonds and floating bonds of Si. Based on the calculated results, it is also indicated that the high quality SiON film can be fabricated by suppressing the incorporation of O atoms into the SiN film, reproducing the reported experiments.     

PMD compensation in optical coherent single carrier transmission using frequency-domain equalisation

The transmission performance of optical single-carrier (SC) transmission using frequency-domain equalisation (FDE) to counter polarisation mode dispersion (PMD) is evaluated. 25 Gbit/s coherent optical SC transmission using FDE (CO-SC-FDE) is demonstrated in the presence of a significant amount of differential group delay (DGD). The results show that CO-SC-FDE compensates for the influence of the 125 ps DGD; the OSNR penalty is 0.81 dB.     

Computer Simulation of Axis-Encircling Beams Generated by an Electron Gun with a Permanent Magnet System

Results from computer aided design of a novel electron gun generating axis-encircling beams are presented and discussed. Numerical experiments were performed by the new version of the software package GUN-MIG named GUN-MIG/CUSP. It is based on a self-consistent relativistic model and is developed as a problem oriented tool for analysis of electron-optical systems with magnetron injection guns (MIG) and electron guns with field reversal (cusp guns), forming axis-encircling beams. As a result of the simulations an electron-optical design of a novel electron gun with permanent magnet system was accomplished. The gun is expected to form high quality beams with small velocity spread and beam ripple. Parameters of the generated beams are appropriate for a prospective weakly relativistic high harmonic large orbit gyrotron (LOG). The development of such device is in progress now at the Research Center for Development of Far-Infrared Region (FIR Center) at Fukui University.     

Thin-Film Thermoelectric Modules for Power Generation Using Focused Solar Light

We demonstrated the fabrication of thin-film thermoelectric generators and evaluated their generation properties using solar light as a thermal source. Thin-film elements of Bi_0.5Sb_1.5Te₃ (p-type) and Bi₂Te_2.7Se_0.3 (n-type), which were patterned using the lift-off technique, were deposited on glass substrates using radiofrequency magnetron sputtering. After annealing at 300°C, the average Seebeck coefficients of p- and n-type films were 150???V/K and ?104???V/K, respectively, at 50°C to 75°C. A cylindrical lens was used to focus solar light to a line shape onto the hot side of the thin-film thermoelectric module with 15 p?Cn junctions. The minimum width of line-shaped solar light was 0.8?mm with solar concentration of 12.5 suns. We studied the properties of thermoelectric modules with different-sized p?Cn junctions on the hot side, and obtained maximum open voltage and power values of 140?mV and 0.7???W, respectively, for a module with 0.5-mm p?Cn junctions. The conversion efficiency was 8.75?×?10^?4%, which was approximately equal to the value estimated by the finite-element method.     

Colored Fluorescent Silk Made by Transgenic Silkworms

Silk is a protein fiber used to weave fabrics and as a biomaterial in medical applications. Recently, genetically modified silks have been produced from transgenic silkworms. In the present study, transgenic silkworms for the mass production of three colors of fluorescent silks, (green, red, and orange) are generated using a vector originating from the fibroin H chain gene and a classical breeding method. The suitability of the recombinant silks for making fabrics is investigated by harvesting large amounts of the cocoons, obtained from rearing over 20 thousand silkworms. The application of low temperature and a weakly alkaline solution for cooking and reeling enables the production of silk fiber without loss of color. The maximum strain tolerated and Young's modulus of the fluorescent silks are similar to those of ordinary silk, although the maximum stress value of the recombinant silk is slightly lower than that of the control. Fabrics with fluorescent color are demonstrated using the recombinant silk, with the color persisting for over two years. The results indicate that large amounts of genetically modified silk can be made by transgenic silkworms, and the silk is applicable as functional silk fiber for making fabrics and for use in medical applications.     

Electrical and Thermal Conductivity and Conduction Mechanism of Ge<Subscript>2</Subscript>Sb<Subscript>2</Subscript>Te<Subscript>5</Subscript> Alloy

Ge₂Sb₂Te₅ alloy has drawn much attention due to its application in phase-change random-access memory and potential as a thermoelectric material. Electrical and thermal conductivity are important material properties in both applications. The aim of this work is to investigate the temperature dependence of the electrical and thermal conductivity of Ge₂Sb₂Te₅ alloy and discuss the thermal conduction mechanism. The electrical resistivity and thermal conductivity of Ge₂Sb₂Te₅ alloy were measured from room temperature to 823 K by four-terminal and hot-strip method, respectively. With increasing temperature, the electrical resistivity increased while the thermal conductivity first decreased up to about 600 K then increased. The electronic component of the thermal conductivity was calculated from the Wiedemann–Franz law using the resistivity results. At room temperature, Ge₂Sb₂Te₅ alloy has large electronic thermal conductivity and low lattice thermal conductivity. Bipolar diffusion contributes more to the thermal conductivity with increasing temperature. The special crystallographic structure of Ge₂Sb₂Te₅ alloy accounts for the thermal conduction mechanism.     

A monolithic DC temperature compensation bias scheme for multistageHEMT integrated circuits

This work benchmarks the first demonstration of a multistage monolithic HEMT IC design which incorporates a DC temperature compensated current-mirror bias scheme. This is believed to be the first demonstrated monolithic HEMT bias scheme of its kind. The active bias approach has been applied to a 2-18 GHz five-section low noise HEMT distributed amplifier which achieves a nominal gain of 12.5 dB and a noise figure <2.5 dB across a 2-18 GHz band, The regulated current-mirror scheme achieves better than 0.2% current regulation over a 0-125°C temperature range, The RF gain response was also measured over the same temperature range and showed less than 0.75 dB gain degradation. This results in a -0.006 dB/°C temperature coefficient which is strictly due to HEMT device G_m variation with temperature. The regulated current-mirror circuit can be employed as a stand-alone V_gs-voltage reference circuit which fan be monolithically applied to the gate bias terminal of existing HEMT ICs for providing temperature compensated performance, This monolithic bias approach provides a practical solution to DC bias regulation and temperature compensation for HEMT MMICs which can improve the performance, reliability, and cost of integrated microwave assemblies (IMAs) used in space-flight military applications