Plastic deformation in a multifunctional Ti-Nb-Ta-Zr-O alloy

Mechanisms for plastic deformation in the newly developed Ti-24 at. pct (Ta + Nb + V)-(Zr,Hf)-O alloys (Gum Metal) were investigated in relation to their unique properties. Transmission electron microscopy revealed that the microstructure after deformation was characterized by highly distorted crystal images, which are accompanied by numerous “giant faults.” Such plastic behavior implies that a large amount of elastic stain energy was stored discretely and hierarchically during cold working. Calculated elastic constants of the Ti-X (Nb,Ta,Mo,V) binary systems predicted that Young’s modulus in 〈001〉 and shear moduli along some directions including slip systems in a bcc crystal were extraordinary small. The low modulus not only well explains the highly distorted microstructure observed in the cold-worked specimens, but also signifies that ideal shear strength of the developed alloys is a very small value, which is close to the practical strength required for plastic deformation in the alloy. This implies that the giant faults observed in the deformed specimen were formed without the aid of dislocation glide.     

Immunohistochemical localization of advanced glycosylation end products in coronary atheroma and cardiac tissue in diabetes mellitus

Advanced glycosylation end products (AGEs) accumulate on long-lived extracellular matrix proteins and have been implicated in the micro- and macrovascular complications of diabetes mellitus. Within the arterial wall, AGE-modified proteins increase vascular permeability, inactivate nitric oxide activity, and induce the release of growth-promoting cytokines. Recently developed anti-AGE antibodies were used in an immunohistochemical analysis of coronary arteries obtained from type II diabetic and nondiabetic patients. High levels of AGE reactivity were observed within the atherosclerotic plaque present in vessels from selected patients with diabetes. Considered together with the pathological effects of AGEs on vascular wall homeostasis, these data support the role of advanced glycosylation in the rapidly progressive atherosclerosis associated with diabetes mellitus.     

Structural significance of the alkyl substituent at the C-4 of (+)-trans-verbenyl acetate in sex pheromonal activity of the American cockroach

The significance of the alkyl group at the C-4 of (+)-trans-verbenyl acetate, which is the sex pheromone mimic of the American cockroach, was investigated. Seven alcohols possessing an ethyl, propyl, or dimethyl group at this position of the 6,6-dimethylbicyclo[3.1.1]heptane skeleton were synthesized and evaluated by behavioral assay. All of the alcohols were inactive, while three of four acetates of the 2-alcohols induced sexual behavior in male cockroaches at the 0.02 or 0.5 mg dosage level, either of which is many orders of magnitude higher than the threshold level of the natural sex pheromones (10^–8 mg). Among the acetates, the compounds with a methyl group or an -oriented ethyl group at C-4 showed the highest activity. The results are discussed in terms of spatial requirements of the molecules for interactions with the receptor.Studies on the sex pheromone mimic of the American cockroach, (+)-trans-verbenyl acetate. Part VIII. For Part VII, seeComp. Biochem. Physiol.,70A: 229–234 (1981).     

Eigen-Texture method: appearance compression and synthesis based ona 3D model

Image-based and model-based methods are two representative rendering methods for generating virtual images of objects from their real images. However, both methods still have several drawbacks when we attempt to apply them to mixed reality where we integrate virtual images with real background images. To overcome these difficulties, we propose a new method, which we refer to as the Eigen-Texture method. The proposed method samples appearances of a real object under various illumination and viewing conditions, and compresses them in the 2D coordinate system defined on the 3D model surface generated from a sequence of range images. The Eigen-Texture method is an example of a view-dependent texturing approach which combines the advantages of image-based and model-based approaches. No reflectance analysis of the object surface is needed, while an accurate 3D geometric model facilitates integration with other scenes. The paper describes the method and reports on its implementation     

Growth of (111) HgCdTe on (100) Si by MOVPE using metalorganic tellurium adsorption and annealing

(lll)B CdTe layers free of antiphase domains and twins were directly grown on (100) Si 4°-misoriented toward<011> substrates, using a metalorganic tellurium (Te) adsorption and annealing technique. Direct growth of (lll)B CdTe on (100) Si has three major problems: the etching of Si by Te, antiphase domains, and twinning. Te adsorption at low temperature avoids the etching effect and annealing at a high temperature grows single domain CdTe layers. Te atoms on the Si surface are arranged in two stable positions, depending on annealing temperatures. We evaluated the characteristics of (lll)B CdTe and (lll)B HgCdTe layers. The full width at half maximum (FWHM) of the x-ray double crystal rocking curve (DCRC) showed 146 arc sec at the 8 |im thick CdTe layers. In Hg_1−xCd_xJe (x = 0.22 to 0.24) layers, the FWHMs of the DCRCs were 127 arc sec for a 7 (im thick layer and 119 arc sec for a 17 (im thick layer. The etch pit densities of the HgCdTe were 2.3 x 106 cm2 at 7 ^m and 1.5 x 106 cm-2 at 17 um.     

Direct growth of CdTe on (100), (211), and (111) Si by metalorganic chemical vapor deposition

CdTe epilayers were grown directly on (100), (211), and (111) silicon substrates by metalorganic chemical vapor deposition (MOCVD). The crystallinity and the growth orientation of the CdTe film were dependent on the surface treatment of the Si substrate. The surface treatment consisted of exposure of the Si surface to diethyltelluride (DETe) at temperatures over 600°C prior to CdTe growth. Direct growth of CdTe on (100) Si produced polycrystalline films whereas (lll)B single crystals grew when Si was exposed to DETe prior to CdTe growth. On (211) Si, single crystal films with (133)A orientation was obtained when grown directly; but produced films with (211)A orientation when the Si surface was exposed to DETe. On the other hand, only (lll)A CdTe films were possible on (111) Si, both with and without Te source exposure, although twinning was increased after exposure. The results indicate that the exposure to a Te-source changes the initial growth stage significantly, except for the growth on (111) Si. We propose a model in which a Te atom replaces a Si atom that is bound to two Si atoms.     

Electrical properties of HgCdTe epilayers doped with silver using an AgNO3 solution

We employed AgNO₃ solutions for doping Ag in liquid phase epitaxy (LPE) grown Hg_0.78Cd_0.22Te epilayers and found that the minority carrier lifetimes became longer so that the diode properties improved. After annealing LPE grown Hg(1-x)Cd(x)Te layers (x=0.22) in Hg atmosphere, the epilayers were immersed in an AgNO₃ solution at room temperature. The typical carrier concentrations of holes was 3 × 10¹⁶ cm⁻³ at 77K. These values were almost the same as for the nondoped wafers. Also, its acceptor level was 3 to 4 meV. This shows that the Ag was activated. The doped crystals have lifetimes several times longer than those of the nondoped crystals. Numerical fitting showed the lifetime was limited mostly by the Auger 7 process. The Shockley-Read-Hall recombination process was not effective. To examine the Ag-doped wafer, we fabricated photodiodes using standard planar technology. The diodes have an average zero-bias resistance of several MΩ and a shunt resistance of about 1 GΩ for a 10 μm cutoff wavelength at 78K. These values are about four times higher than those of nondoped diodes. The photo current is also two times higher at the same pixel size. This shows that the quantum efficiency is increased. The extension of the lifetime contributes to the high resistance and the high quantum efficiency of the photodiode.     

Analyzing the Boundary Thermal Resistance of Epitaxially Grown Fe<Subscript>2</Subscript>VAl/W Layers by Picosecond Time-Domain Thermoreflectance

To gain deep insight into the mechanism of phonon scattering at grain boundaries, we investigated the boundary thermal resistance by using picosecond pulsed-laser time-domain thermoreflectance for epitaxially grown W/Fe₂VAl/W films. By using radio-frequency magnetron sputtering, we prepared a series of the three-layer films whose Fe₂VAl thickness ranged from 1 nm to 37 nm. The fine oscillation of reflectivity associated with the top W layer clearly appeared in synchrotron x-ray reflectivity measurements, indicating a less obvious mixture of elements at the boundary. The areal heat diffusion time, obtained from the time-domain thermoreflectance signal in the rear-heating front-detection configuration, reduced rapidly in samples whose Fe₂VAl layer was thinner than 15 nm. The ～ 10% mismatch in lattice constant between Fe₂VAl and W naturally produced the randomly distributed lattice stress near the boundary, causing an effective increase of boundary thermal resistance in the thick samples, but the stress became homogeneous in the thinner layers, which reduced the scattering probability of phonons.     

Characterization of interface stress at InGaPAs/GaAs by cr-related luminescence line in GaAs

The interface stress at InGaPAs/GaAs heterostructure has been investigated using the energy shift and splitting of the Cr-related zero-phonon photoluminescence line at 0.839 eV observed in GaAs. It has been found that the GaAs substrate suffers both compressive uniaxial stress and tensile hydrostatic pressure at the InGaPAs/GaAs heterointerface. These shifts and splittings of the 0.839 eV line have been systematically examined as a function of the lattice mismatch between InGaPAs and GaAs, and the thicknesses of the epitaxial-layer and substrate. The amount of the interface stress existing at InGaPAs/GaAs heterostructure has been estimated, based on uniaxial stress data for GaAs: Cr wafers.