Amorphous phase and crystalline morphology in blend of two polymorphic polyesters: Poly(hexamethylene terephthalate) and poly(heptamethylene terephthalate)

Crystalline/crystalline blends of two polymorphic aryl-polyesters, poly(hexamethylene terephthalate) (PHT) and poly(heptamethylene terephthalate) (PHepT), were prepared and the crystallization kinetics, polymorphism behavior, spherulite morphology, and miscibility in this blend system were probed using polarized-light optical microscopy (POM), differential scanning calorimetry (DSC), temperature-resolved wide-angle X-ray diffraction (WAXD), and small angle X-ray scattering (SAXS). The PHT/PHepT blends of all compositions were proven to be miscible in the melt state or quenched amorphous glassy phase. Miscibility in PHT/PHepT blend leads to the retardation in the crystallization rate of PHT; however, that of PHepT increases, being attributed to the nucleation effects of PHT crystals which are produced before the growth of PHepT crystals. In the miscible blend of polymorphic PHT with polymorphic PHepT, the polymorphism states of both PHT and PHepT in the blend are influenced by the other component. The fraction of the thermodynamically stable β-crystal of PHT in the blend increases with increasing PHepT content when melt-crystallized at 100 °C. In addition, when blended with PHT, the crystal stability of PHepT is altered and leads to that the originally polymorphic PHepT exhibits only the β-crystal when melt-crystallized at all T_c's. Apart from the noted polymorphism behavior, miscibility in the blend also shows great influence on the spherulite morphology of PHT crystallized at 100 °C, in which the dendritic morphology corresponding to the β-crystal of PHT changes to the ring-banded in the blend with higher than 50 wt% PHepT. In blends of PHT/PHepT one-step crystallized at 60 °C, PHepT is located in both PHT interlamellar and interfibrillar region analyzed using SAXS, which further manifests the miscibility between PHT and PHepT.     

Liquid Phase Oxidation of p-Cresol over Cobalt Saponite

Liquid phase oxidation of p-cresol was carried out over a Co-saponite catalyst in a temperature and pressure range of 333–393 K and 20–827 kPa, respectively in n-propanol. Co-saponites with varying cobalt content (5–30%) were prepared and screened among which 13% Co-saponite gave the highest conversion of 92% of p-cresol with 92% selectivity to p-hydroxybenzaldehyde without formation of any non-oxidation products.     

Ultralow-Thermal-Budget CMOS Process Using Flash-Lamp Annealing for 45 nm Metal/High- $k$ FETs

This paper describes a fabrication process that uses flash-lamp annealing (FLA) and the characteristics of the CMOS transistors that are constructed with an ultralow-thermal- budget process tuned for 45-nm metal/high-k FETs. FLA enhances the drivability of pFETs with the solid-phase epitaxial (SPE) extension junction, but reducing the thermal budget deteriorates the poly-gate depletion and the electron mobility. Metal gate, however, prevents the depletion problem and leads to higher drain currents and better threshold-voltage (V_TH) roll-offs when processed with tilted extension implantation combined with SPE + FLA than when processed with untilted extension implantation combined with spike rapid thermal annealing. Reducing the thermal budget is also effective in obtaining low V_TH values in p-metal/HfSiON gate because of the reduced vacancy formation. Moreover, cluster-boron implantation for pFETs has superiority over monomer-boron implantation with Ge postamorphous implantation in terms of V_TH roll-offs and I_on-I_off's if FLA is used as activation. The superior electrical characteristics of full-metal- gate HfSiON transistors whose gate length is less than 50 nm, which are fabricated by using the FLA process, are demonstrated.