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31.
The results obtained from the sintering of Al2O3–50TiC (in weight percent) composite in the temperature range from 1650° to 1800°C with addition of Y2O3 are presented. Densification is accelerated by the formation of liquid at temperatures above 1750°C, and 99% of theoretical density can be achieved by vacuum sintering at 1800°C for 15 min. The liquid presented at the sintering temperature is crystallized to YAG (Y3Al5O12) during cooling.  相似文献   
32.
A mesoporous membrane for selective separation of hydrogen was prepared usingthe sol-gel method. Some metal salts such as RuCl3, Pd(NH3)4Cl2, RhCl3,, and H 2PtCl6, were added to the boehmite sol and coated on a porous alumina substrate before firing at 500°C. It was foundthat the permeability of hydrogen and the separation factor for a hydrogen-nitrogen gaseous mixture of these metaldispersed membranes exceeded the limitations of the Knudsen diffusion mechanism. Although the gas permeation through a neat alumina membrane is governed by the Knudsen diffusion, the metals dispersed in alumina membranes were effective in promoting hydrogen permeation. These metaldispersed alumina membranes were also used in a membrane reactor for methane steam reforming at low temperature. In the temperature range of 300 to 500°C, the membrane reactor attained a methane conversion twice as high as the equilibrium value of the packed bed catalytic reactor system as a result of the selective removal of hydrogen from the reaction system.  相似文献   
33.
When reaction-bonded silicon nitride containing MgO/Y2O3 additives is sintered at three different temperatures to form sintered reaction-bonded silicon nitride (SRBSN), the thermal conductivity increases with sintering temperature. The β-Si3N4 (silicon nitride) crystals of SRBSN ceramics were synthesized and characterized to investigate the relation between the crystal structure and the lattice oxygen content. The hot-gas extraction measurement result and the crystal structure obtained using Rietveld analysis suggested that the unit cell size of the β-Si3N4 crystal increases with the decrease in the lattice oxygen content. This result is reasonable considering that the lattice oxygen with the smaller covalent radius substitutes nitrogen with the larger one in the β-Si3N4 crystals. The lattice oxygen content decreased with increasing sintering temperature which also correlated with increase in thermal conductivity. Moreover, it is noteworthy from the viewpoint that it may be possible to apply the lattice constant analysis for the nondestructive and simple measurement of the lattice oxygen content that deteriorates the thermal conductivity of the β-Si3N4 ceramics.  相似文献   
34.
In quenching, the cooling uniformity is most important to diminish distortion occurring on work pieces. As a trial to accomplish uniform cooling, therefore, there exist various mixing methods of a quenchant and the quenchant circulation with an external pump has so far been the well accepted mixing method. However, this study proposes an advanced oscillation mixing method that can improve more the cooling uniformity in quenching. The proposed method includes a stirrer in oscillating motion, so that the simultaneous oscillating and mixing movements of the stirrer are considered to provide efecfively the uniform cooling characteristics for the quenchant. In comparison with the case of the circulation pump mixing, the investigation using the oscillation mixing method has demonstrated the following two experimental facts:(1) the short vapor blanket stage caused by the quick breakage of the oil vapor blanket and (2) the reduced variation of the quenching distortion.  相似文献   
35.
The microstructure development during plastic deformation was reviewed for iron and steel which were subjected to cold rolling or mechanical milling (MM) treatment, and the change in strengthening mechanism caused by the severe plastic deformation (SPD) was also discussed in terms of ultra grain refinement behavior. The microstructure of cold-rolled iron is characterized by a typical dislocation cell structure, where the strength can be explained by dislocation strengthening. It was confirmed that the increase in dislocation density by cold working is limited at 1016m−2, which means the maximum hardness obtained by dislocation strengthening is HV3.7 GPa. However, the iron is abnormally work-hardened over the maximum dislocation strengthening by SPD of MM because of the ultra grain refinement caused by the SPD. In addition, impurity of carbon plays an important role in such grain refinement: the carbon addition leads to the formation of nano-crystallized structure in iron.  相似文献   
36.
37.
Epitaxial multilayer thin films of infinite-layer (Sr, Ca)CuO2 and perovskite (Sr, Ca)RuO3 have been prepared on (100) SrTiO3 substrates by multitarget rf magnetron sputtering. X-ray diffraction analyses revealed that the multilayer structure of (Sr, Ca)CuO3/(Sr, Ca)RuO3 was successfully fabricated with a minimum layer thickness of 20 Å. Transmission electron microscopy measurements of the multilayers indicated that there was no dislocation which normally exists in single-layer films with an infinite-layer structure. Resistivities of multilayer films at room temperature ranged from 1 to 10 m cm and showed semiconductor-like dependence against the temperature.  相似文献   
38.

Epilepsy is a neurological disorder that may affect the autonomic nervous system (ANS) from 15 to 20 min before seizure onset, and disturbances of ANS affect R–R intervals (RRI) on an electrocardiogram (ECG). This study aims to develop a machine learning algorithm for predicting focal epileptic seizures by monitoring R–R interval (RRI) data in real time. The developed algorithm adopts a self-attentive autoencoder (SA-AE), which is a neural network for time-series data. The results of applying the developed seizure prediction algorithm to clinical data demonstrated that it functioned well in most patients; however, false positives (FPs) occurred in specific participants. In a future work, we will investigate the causes of FPs and optimize the developing seizure prediction algorithm to further improve performance using newly added clinical data.

  相似文献   
39.
To minimize the deviation of the predicted creep curves obtained under constant load conditions by the original θ projection model, a new modified version that can be expressed by ε=θ11-e-θ2t+θ3eθ4eθ5εt-1, was derived and experimentally validated in our last study. In the present study, the predictive capability of the modified θ projection model was investigated by comparing the simulated and experimentally determined creep curves of K465 and DZ125 superalloys over a range of temperatures and stresses. Furthermore, the linear relationship between creep temperature and initial stress was extended to the 5-parameter model. The results indicated that the modified model could be used as a creep life prediction method, as it described the creep curve shape and resulted in predictions that fall within a specified error interval. Meanwhile, this modified model provides a more accurate way of describing creep curves under constant load conditions. The limitations and future direction of the modified model were also discussed. In addition, this modified θ projection model shows great potential for the evaluation and assessment of the service safety of structural materials used in components governed by creep deformation.  相似文献   
40.
Thick silica films were prepared by the electrophoretic sol–gel deposition technique in the presence of poly(acrylic acid) (PAA) using monodispersed silica particles; the particles were prepared by the sol–gel method, pre-heat treated and then re-dispersed in the mixture of H2O and ethanol. The weight of deposited silica films was maximized when 0.2 mass % of PAA against the whole amount of sol was added. The particles constructing the thick silica films were packed densely when the amount of added PAA was less than 0.2 mass%. The weight of the film increased with decrease in the content of H2O in the sol when a fixed amount of PAA was added. After the heat treatment of deposited films at 800 °C, crack-free silica films of about 30 m thickness were prepared. © 1998 Chapman & Hall  相似文献   
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