A Low-Power Fullband 802.11a/b/g WLAN Transceiver With On-Chip PA

A low-power fullband 802.11a/b/g WLAN transceiver in 0.15-mum CMOS technology is described. The zero-IF transceiver achieves a receiver noise figure of 4.4/4 dB for the 2.4-GHz/5-GHz bands, respectively. The corresponding sensitivity at 54-Mb/s operation is -72 dBm for 802.11g and -74 dBm for 802.11a using actual PER measurement. An on-chip PA delivers 20 dBm output P1-dB. A new I/Q compensation scheme is implemented in local oscillator (LO) and an image rejection of better than 52 dB is observed. The transmitter delivers 10/1.5 dBm (2.4-/5-GHz) EVM-compliant output power for a 64-QAM OFDM signal at 54-Mb/s. The power consumption is 117/135 mW (1.8-V) in the receive mode and 570/233.1 mW in the transmit mode for 2.4/5 GHz, respectively. The low power consumption, high integration and robustness (-40 to 140degC) make this transceiver suitable for portable applications     

Hypoxia Regulates the Self-Renewal of Endometrial Mesenchymal Stromal/Stem-like Cells via Notch Signaling

Human endometrium is an incredibly dynamic tissue undergoing cyclic regeneration and shedding during a woman’s reproductive life. Endometrial mesenchymal stromal/stem-like cells (eMSC) contribute to this process. A hypoxic niche with low oxygen levels has been reported in multiple somatic stem cell types. However, the knowledge of hypoxia on eMSC remains limited. In mice, stromal stem/progenitor cells can be identified by the label-retaining technique. We examined the relationship between the label-retaining stromal cells (LRSC) and hypoxia during tissue breakdown in a mouse model of simulated menses. Our results demonstrated that LRSC resided in a hypoxic microenvironment during endometrial breakdown and early repair. Immunofluorescence staining revealed that the hypoxic-located LRSC underwent proliferation and was highly colocalized with Notch1. In vitro studies illustrated that hypoxia activated Notch signaling in eMSC, leading to enhanced self-renewal, clonogenicity and proliferation of cells. More importantly, HIF-1α played an essential role in the hypoxia-mediated maintenance of eMSC through the activation of Notch signaling. In conclusion, our findings show that some endometrial stem/progenitor cells reside in a hypoxic niche during menstruation, and hypoxia can regulate the self-renewal activity of eMSC via Notch signaling.     

基于有限样本的大气偏振模式生成方法

大气偏振模式在导航等领域具有广阔的应用前景,但是由于受到大气偏振信息采集装置物理特性的限制,在同一时刻只能获得局部的、不连续的偏振信息,对实际应用产生影响。针对此问题,本文通过挖掘大气偏振模式分布的连续性,提出一种大气偏振模式生成方法,从局部的偏振信息生成全天域的大气偏振模式。此外,偏振信息往往受到不同的天气条件、地理环境等因素的影响,而这些偏振数据在真实环境中难以采集。针对此问题,本文挖掘不同天气、地理条件下有限样本数据之间的多样性关系,以此关系将生成的大气偏振模式泛化到不同的条件下。本论文在仿真数据和实测数据上进行了实验,并与其它最新方法进行对比,实验结果证明了本文方法的优越性和鲁棒性。     

Measurement of periodic micro flows using micro-particle image velocimetry with phase sampling

A phase-sampling method has been developed to measure periodic flows at a high temporal resolution using conventional micro-particle image velocimetry (PIV). In this technique, the sampling is set such that each velocimetry dataset represents a unique point in phase of a periodic flow. The flow characteristics over a single cycle are reconstructed from measurements over a number of cycles, thus allowing measurement at a higher temporal resolution than the PIV system. The flow measurements were performed for AC electroosmotic flows and verified with results from the phase-locking technique. The temporal resolution is limited by the shortest camera exposure time and the time separation between laser pulses. The theoretical sampling resolution can be as low as 20 μs for 100 Hz periodic flows. A resolution of 200 μs was obtained in the experiment using 40 velocimetry datasets.     

Spatial Wavefunction-Switched (SWS) InGaAs FETs with II–VI Gate Insulators

This paper presents the implementation of a novel InGaAs field-effect transistor (FET), using a ZnSe-ZnS-ZnMgS-ZnS stacked gate insulator, in a spatial wavefunction-switched (SWS) structural configuration. Unlike conventional FETs, SWS devices comprise two or more asymmetric coupled quantum wells (QWs). This feature enables carrier transfer vertically from one quantum well to another or laterally to the wells of adjacent SWS-FET devices by manipulation of the gate voltages (V _g). Observation of an extra peak (near both accumulation and inversion regions) in the capacitance–voltage data in an InGaAs-AlInAs two-quantum-well SWS structure is presented as evidence of spatial switching. The peaks are attributed to the appearance of carriers first in the lower well and subsequently their transfer to the upper well as the gate voltage is increased. The electrical characteristics of a fabricated SWS InGaAs FET are also presented along with simulations of capacitance–voltage (C–V) behavior, showing the effect of wavefunction switching between wells. Finally, logic operations involving simultaneous processing of multiple bits in a device, using coded spatial location of carriers in quantum well channels, are also described.     

Simulation of hole-mobility in doped relaxed and strained Ge

As silicon CMOS begins to reach the limits of its performance, alternative channel materials are being considered. Thus there is renewed interest in employing Germanium for p-MOSFETs, due to the significant improvement in hole mobility as compared to silicon for undoped materials. Of considerable interest from a device point of view is the transport in doped layers. We investigate hole transport at high carrier-densities in doped Germanium layers using a bulk 6-band k·p Monte Carlo simulator, and show that both dynamic and multi-ion screening play a significant role in describing the resulting transport.     

Amphiphilic and photocatalytic behaviors of TiO2 nanotube arrays on Ti prepared via electrochemical oxidation

Amphiphilic TiO₂ nanotube arrays (TiO₂ NTs) were fabricated through electrochemical oxidation of Ti in solution containing H₃PO₄ and NaF. Scanning electron microscopic analysis shows that the as-prepared TiO₂ NTs have an average pore diameter of 100 nm and a wall thickness of 15 nm. The electrochemical oxidation of Ti can be divided into four stages. In the first stage, when the potential is very low, oxygen formation and Ti dissolution are the major reactions. The second stage corresponds to a slightly higher potential, but less than 2.5 V. In this stage, the formation of TiO₂ film occurs. When the potential is increased to the even higher range from 2.5 V to 6 V, the TiO₂ film dissolves and nanoporous surface structure is generated. This is the third stage. Further increase of the potential enters stage four. The high potentials cause the self-organization of the nanostructure and allow the formation of well-aligned TiO₂ NTs. We also found that the change in surface condition of Ti by annealing heat treatment affects the film dissolution kinetics. As compared with TiO₂ thin film, the TiO2 NTs show higher photocatalytic activity on decomposing Rhodamine B. The surface of the TiO₂ NTs can be wetted by both water and oil. Such an amphiphilic property comes from the capillary effect of the nanochannel structure of the TiO₂ NTs. Because of the amphiphilic property and the photocatalytic activity, we conclude that the TiO₂ NTs have the capability of self-cleaning.     

浅述医院计算机的常见故障及维护维修方法

加强掌握计算机常见故障的维护维修方法对计算机应用人员尤为重要,本文弃繁从简,避开繁杂的维修理论,将计算机常用检测维修方法进行简化归纳,深入浅出、实用易懂,对提高计算机维修技能大有益.     

初中物理教学课堂引入策略探讨

课堂引入在教学中是一个非常重要的阶段,它既可以激发学生的学习兴趣,又可以增长求知欲,消除其他课程的延续性,使学生的思维进入最佳状态,从而达到事半功倍的效果.实验引入法、讲故事引入法、情景引入法、问题引入法、复习引入法等教学方法在物理教学中能取得良好的效果.