基于空间矩的灰度边缘亚像元度量精度分析

灰度图像中边缘定位受采样密度限制，亚像元精度度量方法在需要高精度的应用中受到重视，要想知识到底需要多高的分辨率才能达到定精度指标，就有必要分析特征定位方法的最坏情况的精度，文中用分析和实验的方法给出了基于空间矩的边缘定位方法，对于边缘点，边缘直线以及直边缘区域的最坏情况定位精度分析。分析和讨论的结果不但可以用来确定已知形状位置估计的最大误差，而且还可用于对准的形状几何参数，以获得较高的精度。     

Chopper stabilised ΠΔΣ analogue to digitalconversion

A chopper stabilised ΠΔΣ ADC architecture is proposed. A chopper stabilised version of ΠΔΣ ADC, which has identical performances to the regular ΠΔΣ ADC but is immune to low frequency noises such as DC offsets, can be obtained without adding hardware complexities     

二聚酸甲酯的合成研究

研究了以自制的脂肪酸甲酯为原料、几种不同催化剂催化合成二聚酸甲酯的反应。结果表明,用活性自土作催化剂,用量（质量分数）为脂肪酸甲酯的10％,反应温度240℃,反应时间6h的条件下,二聚酸甲酯的收率可达到39％。此工艺为二聚酸甲酯的合成提供了一条新的路线。     

大庆油田深层气井微间隙封堵固井技术

为了解决深层天然气固井后气窜的问题,大庆油田开展了微间隙封堵固井技术的研究。通过对庆深气田气窜机理的研究,分析了微裂隙、微环隙形成的主要原因,计算了不同规格的套管由于憋压而引起的微环隙数值,提出了新的消除微环隙、微裂隙的防窜措施,即封堵液封堵技术。大量的室内试验和现场模拟试验表明,该封堵液悬浮性能和流变性能好,封堵和防气窜效果明显。     

Silicon thin films prepared in the transition region and their use in solar cells

Diphasic silicon films (nc-Si/a-Si:H) have been prepared by a new regime of plasma enhanced chemical vapour deposition in the region adjacent of phase transition from amorphous to microcrystalline state. Comparing to the conventional amorphous silicon (a-Si:H), the nc-Si/a-Si:H has higher photoconductivity (σ_ph), better stability, and a broader light spectral response range in the longer wavelength range. It can be found from Raman spectra that there is a notable improvement in the medium range order. The blue shift for the stretching mode and red shift for the wagging mode in the IR spectra also show the variation of the microstructure. By using this kind of film as intrinsic layer, a p–i–n junction solar cell was prepared with the initial efficiency of 8.51% and a stabilized efficiency of 8.01% (AM1.5, 100 mw/cm²) at room temperature.     

沼气发电机组的开发利用

沼气机组发电符合当今发展循环经济,节约能源的时代要求,也会对缓解国内区域性能源紧张发挥重要作用.本文介绍了当前我国沼气生产、利用的现状,阐明了沼气的组成及其燃烧特性,论述了沼气发电机组的结构原理及其创新技术.     

AUTOCAD在电机设计中的应用

本文结合电机设计的特点,对AUTOCAD绘图软件包进行了专用化处理,使之可直接应用于工程实际。     

Side-Channel Information Characterisation Based on Cascade-Forward Back-Propagation Neural Network

Traditional cryptanalysis assumes that an adversary only has access to input and output pairs, but has no knowledge about internal states of the device. However, the advent of side-channel analysis showed that a cryptographic device can leak critical information. In this circumstance, Machine learning is known as a powerful and promising method of analysing of side-channel information. In this paper, an experimental investigation on a FPGA implementation of elliptic curve cryptography (ECC) was conducted to explore the efficiency of side-channel information characterisation based on machine learning techniques. In this work, machine learning is used in terms of principal component analysis (PCA) for the preprocessing stage and a Cascade-Forward Back-Propagation Neural Network (CFBP) as a multi-class classifier. The experimental results show that CFBP can be a promising approach in characterisation of side-channel information.     

基于表面势的HEMT模型分析

将表面势的概念引入GaAs高电子迁移率晶体管器件结构,以建立可精确描述HEMT器件输入/出特性的新模型。通过分析最基本的HEMT结构,参考Si基MOSFET中Pao-sah模型的分析方法,对沟道电荷利用泊松方程表述,并结合能带电压关系,建立HEMT器件中表面势(Φ_s)对于栅压(V_(GS))的关系。基于上述分析计算了沟道中电子的饱和点。根据推导所得方程,模型计算得到的某具体器件沟道面电荷密度(n_s)-栅压(V_(GS))关系曲线和基于T-CAD工具仿真结果在线性区得到很好的吻合。     

TiC/n型4H-SiC欧姆接触的低温退火研究

利用电子回旋共振(ECR)氢等离子体处理n型4H-SiC(0.5～1.5×1019cm-3)表面,采用溅射法制备碳化钛(TiC)电极,并在低温(<800℃)条件下退火。直线传输线模型(TLM)测试结果表明,TiC电极无需退火即可与SiC形成欧姆接触,采用ECR氢等离子体处理能明显降低比接触电阻,并在600℃退火时获得了最小的比接触电阻2.45×10-6Ω.cm2;当退火温度超过600℃时,欧姆接触性能开始退化,但是比接触电阻仍然低于未经氢等离子体处理的样品,说明ECR氢等离子体处理对防止高温欧姆接触性能劣化仍有明显的效果。利用X射线衍射(XRD)分析了不同退火温度下TiC/SiC界面的物相组成,揭示了电学特性与微观结构的关系。