High-Performance Electroabsorption Modulators Utilizing Microwave Reflection Control Technique

A microwave reflection control technique that improves the performance of electroabsorption modulators (EAMs) is presented. The technique exploits the superposition of incident and reflected electrical signals as a modulation signal to enhance the modulation signal voltage applied to EAMs and therefore differs from conventional impedance matching techniques in terms of operating principle. A nearly flat electrical-to-optical frequency response up to 50 GHz and significant improvement in eye openings at 40 Gbit/s have been achieved with the technique. The effects of the technique are demonstrated through both experimental and computational investigations.     

Development of a 385–500 GHz Sideband-Separating Balanced SIS Mixer

A submillimeter (385–500 GHz) low-noise sideband-separating balanced SIS (Superconductor Insulator Superconductor) mixer (Balanced 2SB mixer) with high IRR (Image Rejection Ratio) has been successfully developed, whose SSB (Single SideBand) noise temperature is ～ 200 K (10hf/k) with an image rejection ratio of ≥?～10 dB. Balanced mixers have become a promising technology which would break through the limitation especially in terahertz receivers and heterodyne arrays. However, though there are examples in microwave with relatively worse noise performance, submillimeter and terahertz balanced mixers have rarely been developed in spite of their astronomical importance. The developed balanced 2SB mixer is not only the first one demonstrated at submillimeter frequency range, but also has very low noise, high IRR, wide detectable frequencies (385–500 GHz), and a flat IF output spectrum. The balanced 2SB mixer is composed of three RF hybrids, four DSB (Double SideBand) mixers, two 180° IF hybrids, and an IF quadrature hybrid. Several important performance indicators such as noise temperature, IRR, required LO (Local Oscillator) power, and IF spectra were measured. The measured LO power required for the balanced 2SB mixer was typically ~ 14 dB less than that of the single-ended mixers.     

Robust porous SiOCH/Cu interconnects with ultrathin sidewall protection liners

Robust porous low-k/Cu interconnects have been developed for 65-nm-node ultralarge-scale integrations (ULSIs) with 180-nm/200-nm pitched lines and 100-nm diameter vias in a single damascene architecture. A porous plasma-enhanced chemical vapor deposition (PECVD)-SiOCH film (k=2.6) with subnanometer pores is introduced into the intermetal dielectrics on the interlayer dielectrics of a rigid PECVD-SiOCH film (k=2.9). This porous-on-rigid hybrid SiOCH structure achieves a 35% reduction in interline capacitance per grid in the 65-nm-node interconnect compared to that in a 90-nm-node interconnect with a fully rigid SiOCH. A via resistance of 9.7 /spl Omega/ was obtained in 100-nm diameter vias. Interconnect reliability, such as electromigration, and stress-induced voiding were retained with interface modification technologies. One of the key breakthroughs was a special liner technique to maintain dielectric reliability between the narrow-pitched lines. The porous surface on the trench-etched sidewall was covered with an ultrathin plasma-polymerized benzocyclobuten liner (k=2.7), thus enhancing interline time-dependent dielectric breakdown reliability. The introduction of a porous material and the control of the sidewall are essential for 65-nm-node and beyond scaled-down ULSIs to ensure high levels of reliability.     

Colored Fluorescent Silk Made by Transgenic Silkworms

Silk is a protein fiber used to weave fabrics and as a biomaterial in medical applications. Recently, genetically modified silks have been produced from transgenic silkworms. In the present study, transgenic silkworms for the mass production of three colors of fluorescent silks, (green, red, and orange) are generated using a vector originating from the fibroin H chain gene and a classical breeding method. The suitability of the recombinant silks for making fabrics is investigated by harvesting large amounts of the cocoons, obtained from rearing over 20 thousand silkworms. The application of low temperature and a weakly alkaline solution for cooking and reeling enables the production of silk fiber without loss of color. The maximum strain tolerated and Young's modulus of the fluorescent silks are similar to those of ordinary silk, although the maximum stress value of the recombinant silk is slightly lower than that of the control. Fabrics with fluorescent color are demonstrated using the recombinant silk, with the color persisting for over two years. The results indicate that large amounts of genetically modified silk can be made by transgenic silkworms, and the silk is applicable as functional silk fiber for making fabrics and for use in medical applications.     

GaInNAs-GaAs long-wavelength vertical-cavity surface-emitting laserdiodes

Vertical-cavity surface-emitting laser diodes with GaInNAs-GaAs quantum-well (QW) active layers are demonstrated for the first time. GaInNAs permits the realization of a long-wavelength vertical-cavity laser grown directly on a GaAs substrate. Room-temperature (RT) pulsed operation is achieved, with an active wavelength near 1.18 μm, threshold current density of 3.1 kA/cm², slope efficiency of ~0.04 W/A, and output power above 5 mW for 45-μm-diameter devices. Laser oscillation is observed for temperatures at high as 95°C     

BESS: a source structure that fully suppresses the floating bodyeffects in SOI CMOSFETs

The most serious problem preventing the widespread use of SOI CMOSFETs-the floating body effects-are almost fully suppressed by a new source structure. In an nMOSFET, this new structure can be represented by an equivalent circuit of a bipolar embedded source structure (BESS) just beneath the n⁺ source junction. In the source region, or p type (or n^--type) recombination centers are embedded in a low-impurity-diffusion region (the base) and acts as a collector of the excess body carriers. The low-impurity-source region lowers the diffusion potential barrier for holes at the source junction. The solid-phase epitaxial regrowth mechanism of the Si⁺ implanted amorphous SOI layer was studied and applied to fabricate a prototype of this device capable of symmetric source-drain operations with the same source-drain breakdown voltage as that of a bulk device     

Destruction of volatile organic compounds used in a semiconductorindustry by a capillary tube discharge reactor

Nonthermal plasma technologies offer an innovative approach to the problem of decomposing various volatile organic compounds (VOCs). The authors focused on DC capillary tube discharge plasma reactors to study the decomposition/destruction efficiency for toluene, EGM, trichloroethane and trichloroethylene at 50-2300 ppm levels in dry air. The effects of gas flow rate, VOC concentration and reactor operating conditions on decomposition and analysis of reactant conversion for each VOC were investigated. The results show that VOC destruction efficiency as high as 90% can be achieved, even under a short residence time (3.8 ms) with a destruction energy efficiency of up to 95 g (VOC)/kWh. Laboratory-scale plasma technology was successfully demonstrated for its potential application for VOC control in the semiconductor clean-room environment     

Analysis of mark-formation process for phase-change media

The objective of this study was to determine the mechanism of a phenomenon peculiar to phase-change recording regarding the mark shape or mark-forming process. The following results were obtained from our simulation of mark shapes, transparency electron microscope observations, and analysis of reproduced signals. A method of calculating a mark shape by calculating the holding-time profile was devised and its appropriateness was confirmed. We found there were close relationships between the cooling pulse shape, the effective erase ratio, the reproduced signal amplitude, and the noise level, and that the temperature change when the mark edge was cooled has a great influence on the stability of the mark shape and crystallized regions     

International intercomparison of horn gain at X-band

An international intercomparison of horn gain and polarization measurements at X-band has previously been completed. There were seven participating laboratories with the National Institute of Standards and Technology serving as the pilot laboratory. Two X-band pyramidal standard gain horns with a nominal gain of 22 dB served as the traveling standards. Quantities measured included on-axis fixed frequency gain at 8, 10, and 12 GHz, swept frequency gain between 8-12 GHz and polarization characteristics at the three fixed frequencies. All laboratories performed the fixed frequency-gain measurements. The swept-frequency and polarization measurements were optional, with four laboratories performing swept-frequency measurements and three laboratories measuring polarization. The results of the gain measurements generally agreed within the reported uncertainties which were of the order of 0.1 dB or less     

Interaction of soliton with sinusoidal wave packet

The interaction of a soliton of the Nonlinear Schrodinger Equation (NSE) with a weak sinusoidal wave packet is treated analytically. The second-order soliton solution containing the original soliton and a perturbing soliton is expanded to first order in the amplitude of the perturbating soliton. From this expansion, one obtains the associate function of Gordon (1992) and a continuous change of position and phase of the perturbed soliton. One finds that the soliton experiences a second-order change of velocity under the influence of the perturbation. This result is then used to derive the displacement due to a wave packet of general shape, which is also confirmed by computer simulation