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81.
We introduce a rewrite-based specification language for modelling probabilistic concurrent and distributed systems. The language, based on PMaude, has both a rigorous formal basis and the characteristics of a high-level rule-based programming language. Furthermore, we provide tool support for performing discrete-event simulations of models written in PMaude, and for statistically analyzing various quantitative aspects of such models based on the samples that are generated through discrete-event simulation. Because distributed and concurrent communication protocols can be modelled using actors (concurrent objects with asynchronous message passing), we provide an actor PMaude module. The module aids writing specifications in a probabilistic actor formalism. This allows us to easily write specifications that are purely probabilistic – and not just non-deterministic. The absence of such (un-quantified) non-determinism in a probabilistic system is necessary for a form of statistical analysis that we also discuss. Specifically, we introduce a query language called Quantitative Temporal Expressions (or QuaTEx in short), to query various quantitative aspects of a probabilistic model. We also describe a statistical technique to evaluate QuaTEx expressions for a probabilistic model.  相似文献   
82.
We present a mobility resilient deterministic broadcast algorithm with worst-case time complexity of O(nlogn)O(nlogn) for ad hoc networks where the nodes possess collision detection capabilities; nn is the total number of nodes in the network. The algorithm is based on a breadth-first traversal of the network and allows multiple simultaneous transmissions by the nodes. The idea of this broadcast algorithm is then extended to develop a mobility resilient deterministic gossiping algorithm having O(Dnlogn)O(Dnlogn) worst-case run time (DD is the diameter of the network graph), which is an improvement over the existing algorithms. Simulation results show that on an average, the time for completing the broadcast or gossiping is significantly lower than the theoretical worst-case time requirement.  相似文献   
83.
A relay based on-line automatic tuning method for PI controllers for stable processes is presented. In the proposed method, prior to controller re-tuning a relay in tandem with the controller and plant induces limit cycle oscillations. Based on the limit cycle measurements, a first order plus dead time (FOPDT) model of the process dynamics is obtained. Simple tuning rules based on ISTE performance criterion and the first order model are developed. The controller settings may be re-tuned non-iteratively to achieve enhanced performance without disrupting closed loop control. A number of simulation examples are given to illustrate the potential advantages of the proposed on-line tuning method.  相似文献   
84.
To realize high-mobility surface channel pMOSFETs on Ge, a 1.6-nm-thick SiOX passivation layer between the bulk Ge substrate and HfSiO gate dielectric was introduced. This approach provides a simple alternative to epitaxial Si deposition followed by selective oxidation and leads to one of the highest peak hole mobilities reported for unstrained surface channel pMOSFETs on Ge: 332 cm2 middotV-1middots-1 at 0.05 MV/cm-a 2times enhancement over the universal Si/SiO2 mobility. The devices show well-behaved output and transfer characteristics, an equivalent oxide thickness of 1.85 nm and an ION/IOFF ratio of 3times103 without detectable fast transient charging. The high hole mobility of these devices is attributed to adequate passivation of the Ge surface  相似文献   
85.
This paper proposes and studies a combined modulation scheme for time hopping ultra wideband (TH-UWB) radio system based on orthogonal pulse position modulation (OPPM) and biorthogonal pulse shape modulation (BPSM). The proposed scheme offers a high data rate with satisfactory system performance by using high-level multi-dimensional modulation schemes. It allows one to increase the number of orthogonal pulses in each pulse position and, consequently, be able to adopt shorter pulse repetition intervals than those used in conventional M-ary OPPM or M-ary biorthogonal PPM (BPPM) modulation schemes. The performance is analyzed by using characteristic function and Gaussian approximation in additive white Gaussian and multipath scenarios, respectively. The proposed scheme reduces multiple access interference considerably in multi-user environments. Finally, simulation results are provided to validate the theoretical results.  相似文献   
86.
A set of general expressions is derived from a single symmetrical relay feedback test for identification of a class of process transfer functions. Using these expressions the parameters of open loop stable nonminimum phase transfer function models may be obtained from simple measurements made on the limit cycle. For comparison, the conventional describing function based identification formulae are presented. Fourier series based curve fitting with the options of nonlinear least squares method and trust-region algorithm is used to measure limit cycle parameters in the presence of measurement noise. Examples are given to illustrate the value of the proposed method  相似文献   
87.
We propose a new coverage metric for delay fault tests. The coverage is measured for each line with a rising and a falling transition, but the test criterion differs from that of the slow-to-rise and slow-to-fall transition faults. A line is tested by a line delay test, which is a robust path delay test for the longest sensitizable path producing a given transition on the target line. Thus, the test criterion resembles path delay test and not the gate or transition delay test. Yet, the maximum number of tests (or faults) is limited to twice the number of lines. In a two-pass test-generation procedure, we first attempt delay tests for a minimal set of longest paths for all lines. Fault simulation is used to determine the coverage metric. For uncovered lines, in the second pass, several paths of decreasing lengths are targeted. We give results for several benchmark circuits  相似文献   
88.
Transport sector in India accounts for 20 % of total commercial energy demand of the country, of which a considerable amount is consumed in the form of liquid and gaseous fuel. A major part of these fuels are imported by the Government. Apart from the import expenditure, Government of India has subsidized these fuels to make it available at affordable prices. To check the financial burden and achieve environmental benefits, technical advancement in present system or alternative infrastructure is required. The present study examines the possible impacts on economy and environment by the implementation of battery electric vehicles (BEVs) along with the conventional road transport system in metropolitans with a case study of Kolkata. The major impact has been observed in controlling the vehicular emission with a decrease in CO2 level by 26.27 t per day, on replacement of only 2 % of the present public transport by suitable BEVs. Maintaining similar service for the passengers the electrical energy required by the alternative vehicles has been estimated to be 41,766 kWh per day. This energy has been proposed to be supplied by remodeled fuel stations equipped with solar photovoltaic systems, if charging strategy is based on renewable sources. In case of fuel economy, the infrastructure has shown the potential in reducing the consumption of diesel and autogas (LPG) by 11,654 and 3,256 liter per day, respectively.  相似文献   
89.
Silicon dioxide (SiO2), silicon nitride (Si x N y ), and zinc sulfide (ZnS) with ammonium sulfide [(NH4)2S] as a prepassivation surface treatment were compared as passivants for InAs/GaSb strained layer superlattice detectors with a 0% cutoff wavelength of ∼10 μm. SiO2 did not show significant improvement and the zero-bias resistance-area product (R 0 A) was 0.72 Ω-cm2 at 77 K. Si x N y passivation showed a nominal improvement with an R 0 A value of 4.1 Ω-cm2 at 77 K. ZnS with (NH4)2S treatment outperformed others significantly, improving the R 0 A value to 492 Ω-cm2 at 77 K. Variable-area diode measurements indicated a bulk-limited R 0 A value of 722 Ω-cm2. ZnS-passivated diodes exhibited maximum surface resistivity with a value of 2500 Ω-cm.  相似文献   
90.
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