Development of an on-line stabilization method for local power systems with large-capacity generation plants

This paper presents an on-line stabilization control method developed with the aim of maintaining transient stability in a local power system which includes large-capacity generation plants. The characteristics of this method are that the power/angle curve is estimated from the on line active and reactive power measured at the generator terminal, and the optimum generation shedding for stabilization is determined by applying the equal area method to this curve. Simulation tests using detailed models of the power system confirmed that the optimum generation shedding for stabilization could be computed for various fault conditions, both symmetrical or asymmetrical. It was also determined that the on-line data could be sampled for several tens of milliseconds after clearing the fault. Thus, this method provides effective control logic for practical stabilizing systems.     

Measurements of the electron accumulation on two Schottky diodes connected metal to metal

Electron accumulation on the metal sides of two Schottky diodes connected metal to metal was observed as a result of the temporary variation of bias between the semiconductor sides of both diodes. The potential of the metals was found to be predictable by a theory based on a property of the Schottky diode.     

Interactions between sodium tetradecyl sulfate and a series of homogeneous polyoxyethyleneglycol- n- dodecyl ethers

The surface tensions of a mixed system of sodium tetradecyl sulfate (STS) and a series of polyoxyethyleneglycol-n-dodecyl ethers (nED) were measured at temperatures of 30 and 40 C, respectively. When the STS concentration was fixed, the surface tension curves of the mixed system showed a flat portion in the range of which the mixed micelles would be formed. With a decrease of the added STS concentration, the length of the flat portion in these curves decreased gradually, and finally disappeared in the presence of 0.05 mM STS. Furthermore, when the concentration of STS was fixed at 1.0 mM, which is below the critical micelle concentration (CMC), the flat portion length in the surface tension curves de-creased with decreasing ethylene oxide chain length in nED and with increasing temperature. The influence of increment of temper-ature was comparable to that for reducing the length of ethylene oxide chain in nED.     

A relational database machine with large semiconductor disk and hardware relational algebra processor

This paper describes the basic concepts, design and implementation decisions, standpoints and significance of the database machine Delta in the scope of Japan’s Fifth Generation Computer Project. Delta is planned to be operational in 1985 for researchers’ use as a backend database machine for logic programming software development. Delta is basically a relational database machine system. It combines hardware facilities for efficient relational database operations, which are typically represented by relational algebra, and software which deals with hardware control and actual database management requirements. Notable features include attribute-based internal schema in accordance with the characteristics found in the relation access from logic programming environment. This is also useful for the hardware relational algebra manipulation algorithm based on merge-sorting of attributes by hardware and a large capacity Semiconductor Disk for fast access to databases. Various implementation decisions of database management requirements are made in this novel system configuration, which will be meaningful to give an example for constructing a hardware and software combination of a relational database machine. Delta is in the stage between detailed design and implementation.     

Consideration of allowable flaw size for pressurized pipes

Failure strength for circumferentially and axially cracked Type 304 stainless steel pipes is evaluated based on the net-stress approach. Using this approach, allowable flaw sizes for pipes containing circumferential or axial cracks are considered from the leakage and breakage viewpoint.     

Gunn-effect high-speed carry finding device for 8 bit binary adder

A high-speed carry finding device consisting of seven inhibitors, each an integrated Schottky electrode-triggered Gunn device and an m.e.s.f.e.t., was fabricated monolithically. The device could find and store carry signals of all digits in 330 ps at the worst logic case. The anode-voltage margin was 11%     

Monte Carlo particle simulation of a GaAs short-channel MESFET

A Monte Carlo particle simulation of a 0.25 ?m-long gate (and 0.25 ?m-long channel) GaAs MESFET having a practical doping density and sitting on a substrate is carried out. Extremely high values of gm and Idss of 643 mS/mm and 5.35 mA/20 ?m were obtained. The near-ballistic nature of the electron transport in the FET was confirmed.