In vivo Doppler shift measurements using multimode fiber-opticcatheters

A new fiber-optic catheter for in vivo blood-flow measurements has been developed. The catheter is designed to measure blood flow in both the forward (toward the catheter tip) and reverse (away from the catheter tip) flow directions. It consists of two multimode optical fibers with core diameter of 50 μm and cladding diameter of 125 μm. One fiber transmits the laser beam into blood and the other receives the backscattered light from the erythrocytes within the probe volume. In the flow experiment, it was found that the flow within the boundary layer is indeed laminar and, hence, the relationship between the Doppler shift frequencies and the flow velocities is linear, thereby making the linear calibration possible for predicting the free stream flow velocity. Plots of the maximum shift frequency (frequency at which the Doppler spectrum disappeared into the noise spectrum) against the flow velocities are found to be more linear in both the forward and reverse flow directions than that of the dominant shift frequency (frequency with the highest amplitude). These results were reaffirmed by the numerical flow simulation along the catheter side wall     

Improvement of linewidth enhancement factor in 1.55-μmmultiple-quantum-well laser diodes

The improvement of the linewidth enhancement factor in complex-coupled laser diode (CC-LD), or loss-coupled, was confirmed by measuring the spontaneous emission spectra below threshold from the sidewall of laser diodes. In addition, the serial resistance of the device was measured. The linewidth enhancement factor is improved by the presence of a light absorbing InGaAs grating for loss coupled distributed-feedback (DFB) laser diode (LD). We report the comparison of the linewidth enhancement factors of Fabry-Perot (FP) LD, conventional DFB-LD, and loss coupled DFB-LDs     

Fast DCT algorithm with fewer multiplication stages

A novel fast DCT scheme with reduced multiplication stages and fewer additions and multiplications is proposed. The proposed algorithm is structured so that most multiplications tend to be performed at the final stage, which reduces the propagation error that could occur in the fixed-point computation. Minimisation of the multiplication stages can further decrease the error     

Motion based object tracking with mobile camera

An efficient algorithm which detects and tracks a moving object is proposed. The global motion energy caused by camera movement is eliminated by finding the maximal matching position with the cross-correlation value between two consecutive frames using the spiral scanning technique. The region of a moving object is segmented exactly by combining the results of the temporal derivatives and edge map from one image, and the actual centroid of the moving object is determined as the mid-point of the cumulative distribution of the projection profile of the region     

欧IV标准的催化转化器结构耐久性验证

接近发动机排气歧管位置的催化转化器由于其最大限度地发挥了催化剂的效能,被欧IV排放标准的车辆广泛应用。本文介绍这种催化转化器的结构和试验验证过程,包括试验目的、试验方案、失效模式、试验参数的确定等等,给出了确定加速耐久性试验的循环次数方程。     

一种辊压式锌电极湿贮存特性

本文介绍了用PTFE作粘结剂的辊压式锌电极。它不仅具有优异的机械强度,而且又有很好的电化学活性,可以在500mA/cm~2高电流密度下进行放电,同时还具有耐湿贮存的特性。     

Power Performance of AlGaN/GaN HEMTs Grown on SiC by Ammonia-MBE at 4 and 10 GHz

In this letter, we report on the microwave power and efficiency performance of AlGaN/GaN high-electron mobility transistors (HEMTs) grown by ammonia molecular beam epitaxy (ammonia-MBE) on SiC substrates. At 4 GHz, an output power density of 11.1 W/mm with an associated power-added efficiency (PAE) of 63% was measured at V _ds = 48 V on passivated devices. At 10 GHz, an output power density of 11.2 W/mm with a PAE of 58% was achieved for V _ds = 48 V. These results are the highest reported power performance for AlGaN/GaN HEMTs grown by ammonia-MBE and the first reported for ammonia-MBE on SiC substrates.     

Broadly wavelength-tunable external cavity lasers with extremely low power variation over tuning range

Tunable external-cavity lasers with low power variation over a broad tuning range are demonstrated using asymmetric multiple quantum-wells with a wide and flat gain. For a 2.8-/spl mu/m-wide ridge waveguide laser of cavity length 380 /spl mu/m, when used in a grating external cavity and with an antireflection coating on one facet of laser diode chip, the power variation of less than -1 dB is obtained over a range of 80 nm. This extremely low power variation is a direct result of the spectrally flat gain.     

Board-level reliability of Pb-free solder joints of TSOP and various CSPs

To evaluate various Pb-free solder systems for leaded package, thin small outline packages (TSOPs) and chip scale packages (CSPs) including leadframe CSP (LFCSP), fine pitch BGA (FBGA), and wafer level CSP (WLCSP) were characterized in terms of board level and mechanical solder joint reliability. For board level solder joint reliability test of TSOPs, daisy chain samples having pure-Sn were prepared and placed on daisy chain printed circuit board (PCB) with Pb-free solder pastes. For CSPs, the same composition of Pb-free solder balls and solder pastes were used for assembly of daisy chain PCB. The samples were subjected to temperature cycle (T/C) tests (-65/spl deg/C/spl sim/150/spl deg/C, -55/spl deg/C/spl sim/125/spl deg/C, 2 cycles/h). Solder joint lifetime was electrically monitored by resistance measurement and the metallurgical characteristics of solder joint were analyzed by microstructural observation on a cross-section sample. In addition, mechanical tests including shock test, variable frequency vibration test, and four point twisting test were carried out with daisy chain packages too. In order to compare the effect of Pb-free solders with those of Sn-Pb solder, Sn-Pb solder balls and solder paste were included. According to this paper, most Pb-free solder systems were compatible with the conventional Sn-Pb solder with respect to board level and mechanical solder joint reliability. For application of Pb-free solder to WLCSP, Cu diffusion barrier layer is required to block the excessive Cu diffusion, which induced Cu trace failure.