Red bean extract reduces inflammation and increases survival in a murine sepsis model

This study used in vitro and in vivo experimental models to investigate the anti-inflammatory potential of the butanol fraction of red bean ethanol extract (BF-RBEE), which contains the biologically active molecule catechin-7-β-d-glucopyranoside. Treatment with BF-RBEE inhibited nitric oxide production in lipopolysaccharide (LPS)-stimulated macrophages through suppression of extracellular signalregulated kinase and IκBα activation. In an in vivo murine sepsis model, oral administration of BF-RBEE improved mouse survival. Specifically, the survival rate of mice injected with LPS was 0 and 40% in ICR and BALB/c mice, respectively, whereas the survival of mice co-treated with BF-RBEE was 100% in both mouse types. This increase in survival with the BF-RBEE administration was correlated with decreased tumor-necrosis factor-α and interferon-γ and increased interleukin-10. Oral administration of BF-RBEE also inhibited total and ovalbumin-specific IgE production in experimental mice. These results suggest the possible usefulness of red beans in the treatment of inflammatory diseases.     

Investigation of organic n-type field-effect transistor performance on the polymeric gate dielectrics

We report a copper hexadecafluorophthalocyanine (F₁₆CuPc) based n-type organic field-effect transistor (OFET) with polymeric gate dielectrics with different physical/electrical properties. The gate dielectrics are four types of cross-linked poly(4-vinylphenol) and newly prepared poly(4-phenoxy methyl styrene) and those are characterized based on surface tension, leakage current and capacitance. The performance of F₁₆CuPc OFETs with those gate dielectrics was compared. We found that the composition of the gate dielectrics and the interfacial interaction of F₁₆CuPc with the gate dielectric play a decisive role in the performance of OFETs. The effect of physical/electrical properties, composition and processing condition of the gate dielectrics on the device performance was investigated.     

Electrospun PEDOT:PSS/PVP nanofibers as the chemiresistor in chemical vapour sensing

Herein, PEDOT:PSS/PVP nanofibers were produced by electrospinning. The presence of PEDOT:PSS in the nanofibers was confirmed by FT-Raman spectroscopy. The applied voltage-dependent diameter of PEDOT:PSS/PVP nanofibers was observed. Also, sensing behaviors of electrospun PEDOT:PSS/PVP nanofibers were explored by measuring its response upon cyclic exposure to organic vapours such as ethanol, methanol, THF, and acetone at room temperature. When PEDOT:PSS/PVP nanofibers were exposed to each solvent, the protic and aprotic solvents resulted in opposite electrical responses. These findings exhibit that electrospun PEDOT:PSS/PVP nanofibers are the promising candidate for the organic vapour sensing material.     

Selective Photothermal Tumor Therapy Using Nanodiamond‐Based Nanoclusters with Folic Acid

This paper describes the fabrication and evaluation of folic acid (FA)‐conjugated nanodiamond (ND) nanoclusters for selective photothermal tumor therapy. ND nanoclusters with surface carboxyl groups are aminated using ethylenediamine and conjugated with FA via carbodiimide chemistry. The temperature of an aqueous ND dispersion (10 μg mL^?1) is increased to 54 °C upon laser exposure for 5 min. FA‐ND nanoclusters are preferentially taken up by KB cells (folate receptor positive) compared to WI‐38 (folate receptor negative) cells, suggesting specificity for tumor cells that overexpress folate receptors. Cell viability tests reveal that FA‐ND nanoclusters effectively and selectively ablate KB cells upon near‐infrared (NIR) laser exposure. In addition, fluorescence microscopy images confirm that only KB cells treated with FA‐ND nanoclusters are ablated in a spot (200 μm in diameter) by NIR laser exposure. In an animal model, a large amount of FA‐ND nanoclusters is accumulated into tumor tissue, resulting in dramatically reduced tumor volume post‐NIR laser exposure as compared to ND nanoclusters.     

Protection of Digital TV from Cognitive Radio Interference

Analytic modeling and computational simulation for the protection of DTV from cognitive radio interference are performed. Protection is achieved by using the protection ratio, which is derived through system modeling and its analysis. On the frequency coordination between digital TV and cognitive radio, an analysis in a co‐channel environment, in a rural area in Korea, is performed.     

Constructing Internet coordinate system based on delay measurement

In this paper, we consider the problem of how to represent the locations of Internet hosts in a Cartesian coordinate system to facilitate estimation of network distances among arbitrary Internet hosts. We envision an infrastructure that consists of beacon nodes and provides the service of estimating network distance between pairs of hosts without direct delay measurement. We show that the principal component analysis (PCA) technique can effectively extract topological information from delay measurements between beacon hosts. Based on PCA, we devise a transformation method that projects the raw distance space into a new coordinate system of (much) smaller dimensions. The transformation retains as much topological information as possible and yet enables end hosts to determine their coordinates in the coordinate system. The resulting new coordinate system is termed as the Internet Coordinate System (ICS). As compared to existing work (e.g., IDMaps and GNP), ICS incurs smaller computation overhead in calculating the coordinates of hosts and smaller measurement overhead (required for end hosts to measure their distances to beacon hosts). Finally, we show via experiments with both real-life and synthetic data sets that ICS makes robust and accurate estimates of network distances, incurs little computational overhead, and its performance is not susceptible to the number of beacon nodes (as long as it exceeds a certain threshold) and the network topology.     

Effects of extended dislocations on charge distribution in GaN epilayer

We have investigated the effect of extended dislocations (0.5-3 μm) on charge distribution in GaN epilayer grown by metalorganic chemical vapor deposition on (0001) sapphire using atomic force microscopy (AFM) and scanning surface potential microscopy (SSPM). It has been observed for the surface at the extended dislocations present in undoped GaN film to be negatively charged showing 0.04-0.2 V higher potential relative to regions that contain no dislocations. In addition to the higher potential at the dislocation core, the surrounding surfaces, including the edge of the dislocations, are also negatively charged in a symmetric way around the dislocations revealing crater-shaped higher potential regions (∼0.04 V) relative to surrounding dislocation-free area. The experimental results show that the protrusion-type of dislocation is also negatively charged and its potential is dependent on the size of dislocation.     

Doping Effects on Thermoelectric Properties in the Mg2Sn System

A weak point of Mg₂X thermoelectrics is the absence of a p-type composition, which motivates research into the Mg₂Sn system. Mg₂Sn thermoelectrics were fabricated by a vacuum melting method and a spark plasma sintering process. As a result, Mg₂Sn single phases were acquired in a wide range of Mg-to-Sn atomic ratios (67:33 to 71:29), showing slightly different thermoelectric characteristics. However, the thermoelectric properties of the undoped system were not sufficient for application in commercial production. To maximize the p-type characteristics, many atoms [Ni (VIIIA), Cu (IB), Ag (IB), Zn (IIB), and In (IIIB)] were doped into the Mg₂Sn phase. Among them, the power factor values increased only in the Ag-doped case. Ag-doping resulted in a power factor that was more than 10 times larger than the value in the undoped case. This result could be important for developing p-type polycrystalline thermoelectrics in the Mg₂X (X?=?Si, Sn) system. However, other atoms [Ni (VIIIA), Cu (IB), Zn (IIB), and In (IIIB)] were not determined to act as acceptor atoms. The maximum ZT value for the Ag-doped Mg₂Sn thermoelectric was more than 0.18, which is comparable to the value for the n-type Mg₂Si system.     

An Efficient Evolution Method From TDM-PON to Next-Generation PON

An efficient evolution method from a time-division-multiplexing passive optical network (TDM-PON) is proposed and demonstrated for a next-generation PON. A single-type three-port wavelength band combiner/splitter enables a simple and efficient evolution of TDM-PON maintaining the current PON infrastructure and wavelength plan. The crosstalk between the TDM-PON and next-generation PON is negligibly small