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61.
Hyukmin Son Sanghoon Lee 《Communications Letters, IEEE》2006,10(5):360-362
A cell planning technique termed BRD (bandwidth and region division) is presented for overcoming interference, maintaining QoS (quality of service) and improving channel capacity over OFDM (orthogonal frequency division multiplexing)-based broadband cellular networks. Through an optimal combination of sectorization and zero padding, bandwidth and region division is achieved that minimizes the outage probability for forward-link cell planning. In order to verify the effectiveness of the proposed algorithm, a Monte Carlo simulation is performed over multi-cell environments. 相似文献
62.
We study a practical approach to match the performance of an output-queued switch statistically. For this purpose, we propose a novel switching architecture called a multiple input/output-queued (MIOQ) switch that requires no speedup for providing sufficient switching bandwidth. To operate an MIOQ switch in a practical manner, we also propose a multitoken-based arbiter which schedules the switch at a high operation rate and a virtual first-in first-out queueing scheme which guarantees the departure order of cells belonging to the same traffic flow at output. Additionally, we show that the proposed switch can naturally provide asymmetric bandwidth for inputs and outputs, which may be important in dealing with the links with different bandwidth demands. Finally, we compare the performance of an MIOQ switch with that of an output-queued switch and discuss the design criteria to match the performance of an output-queued switch. 相似文献
63.
Jae-Duk Lee Jeong-Hyuk Choi Donggun Park Kinam Kim 《Electron Device Letters, IEEE》2003,24(12):748-750
In contrast to the conventional theories, we have revealed that the most distinguished mechanism in the data retention phenomenon after Fowler-Nordheim (FN) stress in sub-100 nm NAND Flash memory cells is the annihilation of interface states. Interface state generation rate increases rapidly as the channel width of NAND flash cell decreases. Comparison of interface states and stress-induced leakage current (SILC) component during retention mode shows that the annihilation of interface states strongly affects data retention characteristics of the programmed cells. 相似文献
64.
This paper presents an orientation-based representation for planar curves and shapes. The new representation can uniquely represent all types, of planar shapes, be it convex, nonconvex, polygonal, smoothly curved, or piecewise smooth shapes. It is based on a new parameterization, theabsolute integral orientation. This representation is invariant under translation and rotation. The absolute integral orientation is a parameter invariant under scaling. As a result, matching of similar shapes (i.e., determination of the relative orientation and the scaling factor) using the absolute integral orientation as the parameter is easier than using the arclength as the parameter. In addition, the new representation has the feature of adaptive sampling, making it more compact and efficient than arc-length-based representations. 相似文献
65.
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67.
Yan R.-H. Lee K.F. Jeon D.Y. Kim Y.O. Park B.G. Pinto M.R. Rafferty C.S. Tennant D.M. Westerwick E.H. Chin G.M. Morris M.D. Early K. Mulgrew P. Mansfield W.M. Watts R.K. Voshchenkov A.M. Bokor J. Swartz R.G. Ourmazd A. 《Electron Device Letters, IEEE》1992,13(5):256-258
The authors report the implementation of deep-submicrometer Si MOSFETs that at room temperature have a unity-current-gain cutoff frequency (f T) of 89 GHz, for a drain-to-source bias of 1.5 V, a gate-to-source bias of 1 V, a gate oxide thickness of 40 Å, and a channel length of 0.15 μm. The fabrication procedure is mostly conventional, except for the e-beam defined gates. The speed performance is achieved through an intrinsic transit time of only 1.8 ps across the active device region 相似文献
68.
69.
R Albrecht TC Awes C Baktash P Beckmann F Berger R Bock G Claesson G Clewing L Dragon A Eklund RL Ferguson A Franz S Garpman R Glasow HA Gustafsson HH Gutbrod J Idh P Jacobs K Kampert BW Kolb P Kristiansson IY Lee H Loehner I Lund FE Obenshain A Oskarsson I Otterlund T Peitzmann S Persson F Plasil AM Poskanzer M Purschke H Ritter S Saini R Santo HR Schmidt T Siemiarczuk SP Sorensen E Stenlund ML Tincknell GR Young 《Canadian Metallurgical Quarterly》1991,44(6):2736-2752
70.
The material properties of new sulphonated phenolic resin (SP) reinforced cement mortars have been investigated. SP was found to promote the dispersion of cement particles and to interact with Ca(OH)2. As a result, the resulting mortars exhibit better workability, more compact structure and higher compressive strength than plain mortars. The mortar with 1 wt% SP present after 28 days curing exhibits a compressive strength of 66MPa, which is about 18% higher than that of plain mortar. 相似文献