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41.
We have investigated the effect of extended dislocations (0.5-3 μm) on charge distribution in GaN epilayer grown by metalorganic chemical vapor deposition on (0001) sapphire using atomic force microscopy (AFM) and scanning surface potential microscopy (SSPM). It has been observed for the surface at the extended dislocations present in undoped GaN film to be negatively charged showing 0.04-0.2 V higher potential relative to regions that contain no dislocations. In addition to the higher potential at the dislocation core, the surrounding surfaces, including the edge of the dislocations, are also negatively charged in a symmetric way around the dislocations revealing crater-shaped higher potential regions (∼0.04 V) relative to surrounding dislocation-free area. The experimental results show that the protrusion-type of dislocation is also negatively charged and its potential is dependent on the size of dislocation.  相似文献   
42.
The transmission mode of holographic polymer‐dispersed liquid crystals (HPDLCs) was developed an under electric field. It is reported that orientation of LC molecules under an electric field induces orientation of oligomer molecules giving rise to low off‐state diffraction and small grating shrinkage. Copyright © 2005 Society of Chemical Industry  相似文献   
43.
A direct adaptive control scheme is proposed for nonminimum-phase systems in which controller parameters are estimated from the recursive least-squares algorithm and additional auxiliary parameters are obtained from the proposed polynomial identity. A local convergence is guaranteed without any extra condition. Integral action is incorporated into the adaptive controller to eliminate the steady-state error and to satisfy a condition of the unique solution for the polynomial identity. The control law used in this scheme is based on the set-point-on-I-only proportional-integral-derivative (PID) structure  相似文献   
44.
The effects of gallia additions on the sintering behavior of gadolinia-doped ceria were systematically investigated from the following aspects: the variation in sintered density, the variation in grain size, and the existing forms of Ga2O3 in CeO2.Sintered density increased with increasing Ga2O3 content up to 5 mol.% and then it decreased with further addition of Ga2O3. Grain size also increased with increasing Ga2O3 content up to 5 mol.% and then decreased with further addition of Ga2O3. Decrease in grain size was caused by a pinning effect of Ga2O3 precipitation at grain boundaries. Lattice constant decreased with increasing Ga2O3 content up to 5 mol.%. This decrease will be due to the substitution of smaller Ga3+ ions for Ce4+ ions in the CeO2 structure. According to the results obtained from scanning electron microscope (SEM) and X-ray diffraction (XRD) analyses, the solubility limit of Ga2O3 in Ce0.8Gd0.2O1.9 ceramics can be estimated to be nearly 5 mol.%. The addition of Ga2O3 up to the solubility limit was found to promote the sintering properties of Gd2O3-doped CeO2.  相似文献   
45.
Jeongsoo Choi 《Polymer》2005,46(23):9725-9735
A series of star-branched poly(ε-caprolactone)s (SPCLs) was synthesized with structural variation of the arm numbers and lengths through ring-opening polymerization under bulk condition. Arm numbers were varied to be 3, 4, and 6 by using multifunctional initiating cores such as trimethylol propane, pentaerythritol, and dipentaerythritol, respectively. The lengths of the poly(ε-caprolactone) arms were varied by controlling the molar ratio of monomer-to-initiating hydroxyl group molar ratio ([CL]0/[-OH]0=5, 10, 15). Molecular weights were determined by both 1H NMR end-group analysis and MALDI-TOF mass spectrometry, which gave reasonably consistent values. On the contrary, the GPC method failed to give accurate values of molecular weight of SPCLs due to the discrepancy with the linear standard. The branching architecture of SPCLs was evaluated by the branching ratio, g, which is the ratio of the mean-square radius of SPCL to that of liner counterpart, linear poly(ε-caprolactone) (LPCL), which is of the same chemistry and having the same molecular weight. The radii of gyration of SPCLs and LPCLs were determined using small-angle X-ray scattering (SAXS) from the initial slopes of Zimm plots, represented as 1/I(q) vs q2 with I(q) and q being the scattered intensity and scattering vector, respectively. The g values were observed to decrease with increasing arm numbers, indicating more compact molecular structure for SPCLs with higher arm numbers, while no such effect was observed for arm length variation. Thermal properties as well as the degree of crystallinity of SPCLs were found to be also dependent on structural variations. The melting points and the degradation temperatures were observed to increase with increasing arm lengths but with constant arm number. On the other hand, arm number variation with constant arm length gave no such changes to the thermal transitions of SPCLs. However, for the SPCLs with equivalent molecular weights, the degree of crystallinity was found to decrease with increasing arm numbers.  相似文献   
46.
High-performance frontal analysis (HPFA) was used for a protein binding study of isoflavones (daidzein, genistin, and genistein), enantiomers of perillyl alcohol and S-ibuprofen to human serum albumin (HSA). The analyses were performed on a Develosil and Inertsil 100-Diol-5 column (10 cm×4.6mm). Sodium phosphate solution (pH 7.4, ionic strength 0.17) was used as the mobile phase at a flow rate of 1 ml/min. To ensure the drug to be eluted as a trapezoidal peak with a plateau, injection volumes were each fixed up the zonal profile with an evident plateau appears. The unbound drug concentration was determined from a plateau height of the plateau region after that experimental data were fitted by Scatchard equation. The binding constants (K) and total binding affinities (nK) of drugs to HSA were calculated, respectively.  相似文献   
47.
Jeong  J. Kim  S. Choi  W. Noh  H. Lee  K. Seo  K.-S. Kwon  Y. 《Electronics letters》2005,41(18):1005-1006
A W-band divide-by-3 frequency divider with wide bandwidth and low power dissipation is presented using harmonic injection-locking technique. A cascode FET is employed for a self-oscillating second-harmonic mixer which is injection-locked by third-harmonic input to obtain the division order of three. The fabricated frequency divider using 0.1 /spl mu/m GaAs metamorphic HEMT technology shows superior performance such as large bandwidth of 6.1 GHz around 83.1 GHz (7.3%) under small DC power consumption of 12 mW.  相似文献   
48.
When a horizontal homogeneous solid is melted from below, convection can be induced in a thermally unstable melt layer. In this study the onset of buoyancy-driven convection during time-dependent melting is investigated by using similarly transformed disturbance equations. The critical Rayleigh numbers based on the melt-layer thickness are found numerically for various conditions. For small superheats, the present predictions approach the well known results of classical Rayleigh-Bénard problems, that is, critical Rayleigh numbers are located between 1,296 and 1,708, regardless of the Prandtl number. However, for high superheats the critical Rayleigh number increases with an increase in phase change rate but with decrease in Prandtl number.  相似文献   
49.
We propose and analyze new finger assignment techniques that are applicable for RAKE receivers in the soft handover (SHO) region. Specifically, extending the results for the case of two-base station (BS), we consider the multi-BS situation, attack the statistics of several correlated generalized selection combining (GSC) stages, and provide closed-form expressions for the statistics of the output signal-to-noise ratio (SNR). By investigating the tradeoff among the error performance, the average number of required path estimations/comparisons, and the SHO overhead, we show through numerical examples that the new schemes offer commensurate performance in comparison with more complicated GSC-based diversity systems while requiring a smaller estimation load and SHO overhead.  相似文献   
50.
ZnO thin film was deposited on various metal electrodes by reactive sputtering, and c-axis preferred orientation of the film has been studied. ZnO, which has high piezoelectricity, is promising for oscillators or filter devices such as surface acoustic wave (SAW) device, gas sensor, and film bulk acoustic resonator (FBAR). But, for the application of ZnO film for these devices, the film should be grown with c-axis normal to the electrode. In this study, Pt, Al, and Au were deposited on Si wafer, and the surface roughness and crystal structure of the ZnO film on the electrode were investigated using AFM, scanning electron microscopy (SEM), and X-ray diffraction (XRD). Columnar structures of ZnO films were grown with c-axis normal to all electrodes, and among them Pt electrode showed the highest preferred orientation of ZnO film.  相似文献   
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