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101.
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H.S. Seo Y.G. Choi B.J. Park D.H. Cho K.H. Kim 《Photonics Technology Letters, IEEE》2003,15(9):1198-1200
A flat signal gain over in the entire C- and L-bands by erbium (Er) ions' radiative transition and stimulated Raman scattering in an Er-doped germano-silica fiber can be obtained if proper values of the concentration of Er and background loss in a fiber core are obtained during the fiber fabrication process. The optimized conditions for the flat C- and L-band gain are analyzed as functions of Er concentrations. Even for a low-gain value provided by a germano-silica core fiber with a low Er concentration and an optimum fiber length, a relatively low pump is required to obtain the flat gain band. 相似文献
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Recent years have witnessed a rapid growth of interest in the study of the dynamic behavior of replenishment rules of bullwhip effect. We prove that bullwhip effect and butterfly effect share a same the self-oscillation amplifying mechanism that is the ordering decisions the supplier self-oscillation amplify the perturbations brought by the errors in the processing of retailers' demand information. This results as an explicit self-similar structure of the sensitivity of the system to the initial values duty to the nonlinear mechanism. In this paper, the causes process of the bullwhip effect is described as the internal nonlinear mechanism and study on the complexity of bullwhip effect for order-up-to policy under demand signal processing. The methodology is based on fractal and chaotic theory and allows important insights to be gained about the complexity behavior of bullwhip effect. 相似文献
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As packet cellular networks are expected to support multimedia services, the authors incorporate the multimedia QoS requirements into the design of a new scheduling algorithm. The proposed wireless-adaptive fair scheduling tries to allocate time slots for each user with fair share by considering the varying channel condition while reflecting the stream requirements and achieving high throughput. 相似文献
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Chel-Jong Choi Tae-Yeon Seong Key-Min Lee Joo-Hyoung Lee Young-Jin Park Hi-Deok Lee 《Electron Device Letters, IEEE》2002,23(4):188-190
The leakage mechanism in p+/n shallow junctions fabricated using Co silicidation and shallow trench isolation processes has been investigated using transmission electron microscopy (TEM) combined with selective chemical etching. TEM and TSUPREM-4 simulation results show that dopant profiles bend upward near the edge of the active region. The formation of the abnormal profile is attributed to transient enhanced diffusion induced by source/drain implantation. Based on the TEM and simulation results, it is suggested that the shallower junctions formed near the active edge can serve as a source for leakage current in the silicided p+ /n shallow junctions 相似文献