Dual command travel times and miniload system throughput with turnover-based storage

We analyze travel times for automated storage/retrieval systems. In particular, we apply our travel time model to turnover-based storage systems and determine the mean and variance of dual command travel times. We present detailed numerical results for selected rack shape factors and ABC inventory profiles. We then investigate the effect of alternative rack configurations on travel time performance measures. We also show how to determine the throughput of miniload systems with turnover-based storage and exponentially distributed pick times.     

基于SOI的双极场效应晶体管

在分析了双极型晶体管和场效应晶体管各自的特点和不足后，介绍了一种既具有双极型晶体管较大电流容量和功率输出，又具有场效应晶体管高输入阻抗的电子器件——双极MOS场效应晶体管(BJMOSFET)，同时指出体硅BJMOSFET的阳极扩散区与衬底之间存在较大的漏电流，可产生较大的寄生效应。提出了一种新型固体电子器件——基于SOI的BJMOSFET，分析了其工作原理j与体硅BJMOSFET比较，由于SOI技术完整的介质隔离避免了体硅器件中存在的大部分寄生效应，使基于SOI的BJMOSFET在体效应、热载流子效应、寄生电容、短沟道效应和闩锁效应等方面具有更优良的特性。     

Performance analysis of OFDMA uplink systems with symbol timing misalignment

This letter presents our investigation for the effect of symbol timing errors in orthogonal frequency-division multiple access (OFDMA) uplink systems. We express the symbol timing errors between users as the symbol timing misalignments with respect to the desired user. Then, we derive an explicit expression of the signal-to-noise ratio (SNR) as a function of the maximum value of the symbol timing misalignments. Analyses and simulation results show that, to achieve an SNR of 20 dB, the maximum value of the symbol timing misalignments must be less than the cyclic prefix duration plus 6.25% of the useful symbol duration. Based on the resulting SNR degradation, we evaluate the SNR gain with guard subcarriers in order to mitigate the effect of the symbol timing misalignments.     

Simultaneous amplification by Er ions and SRS in an Er-doped germano-silica fiber

A flat signal gain over in the entire C- and L-bands by erbium (Er) ions' radiative transition and stimulated Raman scattering in an Er-doped germano-silica fiber can be obtained if proper values of the concentration of Er and background loss in a fiber core are obtained during the fiber fabrication process. The optimized conditions for the flat C- and L-band gain are analyzed as functions of Er concentrations. Even for a low-gain value provided by a germano-silica core fiber with a low Er concentration and an optimum fiber length, a relatively low pump is required to obtain the flat gain band.     

聚甲亚胺改性尼龙6复合材料的等温结晶动力学

采用差示扫描量热法（DSC）对聚甲亚胺（PAM）/尼龙6复合材料等温结晶过程进行了研究。结果表明，PAM的加入使得基体的结晶速率增大，尤其是当含量为5%时，半结晶期明显减少。研究还发现，该体系的等温结晶过程完全可以用Avrami方程来描述，各试样的Avrami指数均在2-3之间，表明Avrami指数，球晶生长方式基本不受聚甲亚胺加入的影响。基体中原位形成的聚甲胺微纤起到了诱导结晶的作用，使得基体的结晶速率加快，但随着微纤含量的增加，由于分散性能变差而使得诱导结晶的能力减弱，表现为结晶速率又有所降低。     

可拓知识空间和可拓知识网格模型(Ⅱ):可拓知识网格

第1部分中已介绍了可拓知识空间定义和相关操作，以及可拓知识空间关联函数计算方法。这一部分进一步建立可拓知识空间语义网、可拓知识网格和可拓知识网格服务，并给出实例和相关的分析讨论。     

医学超声图像处理系统

超声图像诊断是与X线CT、同位素扫描、核磁共振等一样重要的医学图像诊断手段。根据肝脏超声图像进行脂肪肝的诊断,是病变确诊的主要方法。但是,与CT和核磁共振等医学图像相比,超声图像的图像质量较差,目前的诊断以定性为主,受主观因素影响较大。以图像分割为基础,以VC语言为工具,建立了超声图像处理系统,对超声图像进行了二值化处理,并对处理结果进行了量化,为诊断提供了依据。     

Enhanced thermal stability of a sputtered titanium-nitride film as a diffusion barrier for capacitor-bottom electrodes

The effect of a thin RuO_x layer formed on the Ru/TiN/doped poly-Si/Si stack structure was compared with that on the RuO_x/TiN/doped poly-Si/Si stack structure over the post-deposition annealing temperature ranges of 450–600°C. The Ru/TiN/poly-Si/Si contact system exhibited linear behavior at forward bias with a small increase in the total resistance up to 600°C. The RuO_x/TiN/poly-Si/Si contact system exhibited nonlinear characteristics under forward bias at 450°C, which is attributed to no formation of a thin RuO_x layer at the RuO_x surface and porous-amorphous microstructure. In the former case, the addition of oxygen at the surface layer of the Ru film by pre-annealing leads to the formation of a thin RuO_x layer and chemically strong Ru-O bonds. This results from the retardation of oxygen diffusion caused by the discontinuity of diffusion paths. In particular, the RuO_x layer in a nonstoichiometric state is changed to the RuO₂-crystalline phase in a stoichiometric state after post-deposition annealing; this phase can act as an oxygen-capture layer. Therefore, it appears that the electrical properties of the Ru/TiN/poly-Si/Si contact system are better than those of the RuO_x/TiN/poly-Si/Si contact system.     

磁浸没透镜的宽束曲轴像差分析的微分代数方法研究

微分代数是计算机数值分析领域中的一个非常有效的方法,可以实现任意高阶微分的准确计算.本文根据微分代数方法的基本原理,将其引入到磁浸没透镜的宽束曲轴像差的分析计算中,得到了任意阶曲轴像差的微分代数表达式.文中针对轴上磁场具有某种解析表达式的一个实际的磁浸没透镜系统,利用微分代数的曲轴像差分析方法,计算了它的曲轴像差,并给出了全部二阶和三阶几何像差的分布图形.     

Abnormal junction profile of silicided p+/n shallowjunctions: a leakage mechanism

The leakage mechanism in p⁺/n shallow junctions fabricated using Co silicidation and shallow trench isolation processes has been investigated using transmission electron microscopy (TEM) combined with selective chemical etching. TEM and TSUPREM-4 simulation results show that dopant profiles bend upward near the edge of the active region. The formation of the abnormal profile is attributed to transient enhanced diffusion induced by source/drain implantation. Based on the TEM and simulation results, it is suggested that the shallower junctions formed near the active edge can serve as a source for leakage current in the silicided p+ /n shallow junctions