Monolithic distributed amplifier with active control schemes for optimum gain and group-delay flatness, bandwidth, and stability

In this paper, active control schemes are presented to optimize the performance of the distributed amplifier (DA) subject to the process variation. A detailed analysis of the DA with mismatched termination loads has been performed, which reveals that pronounced gain and group-delay ripple arises at the low-frequency end from the reflected waves in the artificial transmission line. To solve this problem, an active variable resistor is proposed as the gate-line termination load. The gain and stability of the cascode DA has also been analyzed, which identifies the most critical component determining the tradeoff between the gain-bandwidth product (GBP) and the stability to be the gate feedback resistor of common-gate field-effect transistor. It is also replaced with the active resistor to maximize GBP, while avoiding oscillations. A nine-section cascode DA with active control features is designed and fabricated using commercial GaAs pseudomorphic high electron-mobility transistor foundry. The measurement shows that the gain and group-delay ripple can be minimized, and GBP can be maximized without oscillations by the active bias controls. Active control schemes allow the monolithic DAs to be fine tuned after the fabrication and, thus, can be a robust DA design methodology against process variation and inaccurate device models.     

Measurement of nonlinear mechanical properties of PDMS elastomer

This paper presents the measurement of the nonlinear mechanical properties of polydimethylsiloxane (PDMS) elastomer based on the mixing ratio of base polymer to curing agent. Strip-type PDMS samples with different mixing ratios were prepared using a simple coating, curing, and cutting process. A cyclic uniaxial tension test with a fixed magnitude of applied strain and a single-pull-to-failure tension test were performed with a micro-tensile tester at room temperature.Our new finding is that when the PDMS is mixed with excessive curing agent, stress softening occurs and residual strain exists in cyclic tension tests when the magnitude of the applied strain increases. For the PDMS-05 samples, in which the mixing ratio of base polymer to curing agent was 5 to 1, there were large differences in the stresses for the same strain level under loading and unloading during the first cycle with a 100% fixed strain amplitude, but the softening effect of the stress in the PDMS dropped rapidly starting from the second cycle.Nonlinear mechanical Neo-Hookean, third-order Mooney, and second-order Ogden models of three different PDMS films were computed from the stress-strain data. The results showed that all models were preferable for the small strain region of PDMS compared with other models. In the nonlinear, large strain region, only the second-order Ogden model properly described the mechanical behavior of the PDMS, while the Neo-Hookean and third-order Mooney-Rivlin models were too stiff or flexible in the measurement range. The bulk modulus of PDMS increased with the amount of curing agent in it. Therefore, the second-order Ogden model is preferable for analyzing the PDMS structure over the entire measurement range. This could provide reasonable mechanical models of PDMS for rapid computational prototyping and for designing active and passive components from PDMS.     

Analysis of large-signal dynamic characteristics of 10-Gb/s tunable distributed Bragg reflector lasers integrated with electroabsorption modulator and semiconductor optical amplifier based on the time-dependent transfer matrix method

We investigate large-signal dynamic characteristics of tunable distributed Bragg reflector (DBR) lasers with different structures. Because of high chirp and complex structures of tunable DBR lasers, it is difficult to accurately analyze large signal chirp and output pulse shapes with analytical models. Therefore, we apply a numerical model based on the time-dependent transfer matrix method to tunable DBR lasers integrated with electroabsorption modulator (EAM) and semiconductor optical amplifier (SOA). Using this model, we find a suitable /spl alpha/-parameter range in the Bragg grating section (/spl alpha//sub Bragg/-parameter) that produces the tolerable wavelength chirp while maintaining a proper tuning range. To employ the tunable lasers in wavelength division multiplexed networks and improve flexibility of the networks, the tunable lasers should have high output power and low wavelength chirp. According to our simulation results, the EAM section had better be located in between SOA and DBR laser sections to obtain high output power and low wavelength chirp.     

Thin-Film Thermoelectric Module for Power Generator Applications Using a Screen-Printing Method

A new process for fabricating a low-cost thermoelectric module using a screen-printing method has been developed. Thermoelectric properties of screen-printed ZnSb films were investigated in an effort to develop a thermoelectric module with low cost per watt. The screen-printed Zn _x Sb_1−x films showed a low carrier concentration and high Seebeck coefficient when x was in the range of 0.5 to 0.57 and the annealing temperature was kept below 550°C. When the annealing temperature was higher than 550°C, the carrier concentration of the Zn _x Sb_1−x films reached that of a metal, leading to a decrease of the Seebeck coefficient. In the present experiment, the optimized carrier concentration of screen-printed ZnSb was 7 × 10¹⁸/cm³. The output voltage and power density of the ZnSb film were 10 mV and 0.17 mW/cm², respectively, at ΔT = 50 K. A thermoelectric module was produced using the proposed screen-printing approach with ZnSb and CoSb₃ as p-type and n-type thermoelectric materials, respectively, and copper as the pad metal.     

Fabrication of micro heaters on polycrystalline 3C-SiC suspended membranes for gas sensors and their characteristics

This paper describes the design, fabrication, and characteristics of micro heaters mad on AlN (0.1 μm)/3C-SiC (1 μm) suspended membranes using surface micromachining technology. 3C-SiC and AlN thin films, which have a large energy band gap and very low lattice mismatch, were used for high-temperature environments. A Pt thin film was used as micro heaters and temperature sensor materials. The resistance of the temperature detector (RTD) and the power consumption of the micro heater were measured and calculated. The heater is designed for an operating temperature up to about 800 °C and can be operated at about 500 °C with a power of 312 mW. The thermal coefficient of the resistance (TCR) of fabricated Pt RTD’s is 3174.64 ppm/°C. The thermal distribution measured by IR thermovision is uniform across the membrane surface.     

Experimental demonstration of enhancing pump absorption rate in cladding-pumped ytterbium-doped fiber lasers using pump-coupling long-period fiber gratings

A long-period fiber grating (LPFG) was inscribed in a single-mode fiber and was spliced with a ytterbium (Yb)-doped double-clad fiber in order to couple pump radiation of the inner cladding into the core in a cladding-pumped fiber laser. The use of an LPFG permits a partial core-pumping scheme in a cladding-pumping fiber laser because a portion of the pump radiation can be coupled to the core by LPFG. The enhancement of the pump absorption of a Yb-doped cladding-pumped fiber laser as the result of pump coupling by LPFG was 35%, and the maximal output power increased by up to 55% when a 20-W pump source is used.     

High average power, high repetition rate, picosecond pulsed fiber master oscillator power amplifier source seeded by a gain-switched laser diode at 1060 nm

We demonstrate a pulsed ytterbium-doped fiber master-oscillator power amplifier source at 1060 nm producing over 300 W of average power in 20-ps pulses at 1-GHz repetition rate. The pulses generated by a gain-switched diode were compressed by a chirped fiber Bragg grating and amplified without any distortion with excellent spectral quality. This fiber master oscillator power amplifier system offers versatility and potential for further power scaling.     

Computation sharing programmable FIR filter for low-power and high-performance applications

This paper presents a programmable digital finite-impulse response (FIR) filter for high-performance and low-power applications. The architecture is based on a computation sharing multiplier (CSHM) which specifically targets computation re-use in vector-scalar products and can be effectively used in the low-complexity programmable FIR filter design. Efficient circuit-level techniques, namely a new carry-select adder and conditional capture flip-flop (CCFF), are also used to further improve power and performance. A 10-tap programmable FIR filter was implemented and fabricated in CMOS 0.25-/spl mu/m technology based on the proposed architectural and circuit-level techniques. The chip's core contains approximately 130 K transistors and occupies 9.93 mm/sup 2/ area.     

Enhanced carrier mobility and photon-harvesting property by introducing Au nano-particles in bulk heterojunction photovoltaic cells

In this study, polymer solar cells (PSCs) doped with Au nanoparticles (Au NPs) were successfully fabricated to maximize the photon-harvesting properties on the photoactive layer. In addition, a conductivity-enhanced hybrid buffer layer was introduced to improve the photon absorption properties and effectively separate the generated charges by adding Au NPs and dimethylsulfoxide (DMSO) to the PH 500 as a buffer layer. The PSC performance was optimized with a 88% improvement over the conventional PSCs (photoactive area: 225 mm², power conversion efficiency (PCE): 3.2%) by the introduction to the buffer layer of Au NPs and DMSO at 10 wt% and 1.0 wt%, respectively, and with 15 wt% Au NP doping in the photoactive layer. The internal resistance was decreased due to the increased photocurrent caused by the localized surface plasmon resonance (LSPR) effect of the Au NPs in the photoactive layer and by the improvement of carrier mobility induced by the DMSO doping of the buffer layer. As a result, the series resistance (R_S) deceased from 42.3 to 19.7 Ω cm² while the shunt resistance (R_SH) increased from 339 to 487 Ω cm².