一种具有带孔补偿过滤器的γ剂量计的能响补偿计算

对在低能区有过高响应的γ辐射剂量计可采用带孔补偿过滤器进行能响补偿。本文介绍了对这类补偿过滤器选择最佳补偿参数(材料厚度和孔隙率)的近似求解方法;并对 CaSO:Tm 热释光剂量计用此方法作了实例计算。文中还计算了自制带有鼠笼结构的这类补偿过滤器的 CaSO:,Tm热释光剂量计对照射量的能量响应,与实测结果比较,各能量点响应的最大相差为10%。     

The Solutions for Adjustment and Reconstruction of Water-Drive Surface Systems in the Old Areas of Daqing Oilfield

Introduction 　　Owing to long-time running, more facilities including stations, pipelines, vessels have become corrosive and aged ,some process has grown old, it has exert more burden for the maintenance and repair.Simultaneously, the fluid production rate, oil production rate and water injection rate has changed greatly so that the inflicts and problems from the established surface systems will become more obvious. Energy cost of production and running has increasing continuously. Capacity has been unbalance in systems and areas. 　　……     

关于粒子加速器人身辐射安全联锁系统设计原则的建议

本文讨论了在粒子加速器上的联锁系统设计中应遵循的一些原则,其中建立隔离区、“失效导致安全(Fail-safe)”,使用“硬件”、“多重联锁”、设置急停开关等是最重要的。     

Systematic characterization of Cl2 reactive ion etchingfor improved ohmics in AlGaN/GaN HEMTs

Pre-metal-deposition reactive ion etching (RIE) was performed on an Al_0.3Ga_0.7N/AlN/GaN heterostructure in order to improve the metal-to-semiconductor contact resistance. An optimum AlGaN thickness for minimizing contact resistance was determined. An initial decrease in contact resistance with etching time was explained in terms of removal of an oxide surface layer and/or by an increase in tunnelling current with the decrease of the AlGaN thickness. The presence of a dissimilar surface layer was confirmed by an initial nonuniform etch depth rate. An increase in contact resistance for deeper etches was experienced. The increase was related to depletion of the two-dimensional (2-D) electron gas (2-DEG) under the ohmics. Etch depths were measured by atomic force microscopy (AFM). The contact resistance decreased from about 0.45 Ωmm for unetched ohmics to a minimum of 0.27 Ωmm for 70 Å etched ohmics. The initial thickness of the AlGaN layer was 250 Å. The decrease in contact resistance, without excessive complications on device processing, supports RIE etching as a viable solution to improve ohmic contact resistance in AlGaN/GaN HEMTs     

Reduction of laser chirp in 1.5 ?m DFB lasers by modulation pulse shaping

The dynamic linewidth of 1.5 ?m ridge waveguide DFB lasers is shown to be reduced by shaping the pulse of the laser modulating waveform. Pulse shaping is performed by a second-order network designed to cancel the small-signal laser resonance. Results demonstrate a dynamic linewidth reduction from 1.4 ? to 0.55 ? FWHM for a 500 ps pulse.     

A distribution function for double-bit upsets

It is suggested that the chord length distribution method could be useful for predicting double-bit upset rates in certain circumstances. A chord length distribution function for simultaneous path lengths in two parallelepipeds, applicable to a unidirectional flux, is derived. A proof of the system is outlined for the case under consideration     

Magnetic field dependence of shielding current density in Y-Ba-Cu-O rings at 77 K

A method for contactless measurement of the shielding critical current density and its dependence on the external magnetic field is described and analyzed. The obtained values are compared with those measured resistively on two different samples. It is shown that the shielding critical current densityJ _cs and the intergranular transport current densityJ _cr are identical if the measurement conditions are similar. A degradation ofJ _cs measured in the external field with AC ripple has been observed.