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991.
Experimental and numerical assessment of gate-lag phenomena in AlGaAs-GaAs heterostructure field-effect transistors (FETs) 总被引:1,自引:0,他引:1
Verzellesi G. Mazzanti A. Basile A.F. Boni A. Zanoni E. Canali C. 《Electron Devices, IEEE Transactions on》2003,50(8):1733-1740
Gate-lag effects are characterized in AlGaAs-GaAs heterostructure field-effect transistors (HFETs) by means of measurements and numerical device simulations. Gate lag increasingly affects device switching at increasing ungated recess extension, suggesting that responsible deep levels be located at the ungated, recess surface of the HFET. Gate lag diminishes by making the off-state gate-source voltage less negative and by increasing the drain bias. Increasing the temperature makes the turn-on transient faster at low drain bias, while slightly delaying it at high drain bias. Numerical device simulations accounting for acceptor-like traps at the ungated surface predict gate-lag phenomena in good agreement with experiments, reproducing correctly the observed bias and temperature dependences. Simulations show that surface states behave, during the turn-on transient, as hole traps capturing holes attracted at the ungated surface by the negative trapped charge. 相似文献
992.
B. Pantchev P. Danesh K. Antonova B. Schmidt D. Grambole J. Baran 《Journal of Materials Science: Materials in Electronics》2003,14(10-12):751-752
The hydrogen content, its depth distribution, and its bonding configuration have been studied in hydrogenated amorphous silicon prepared by plasma-enhanced chemical vapor deposition with hydrogen-diluted silane. Nuclear reaction analysis and infrared spectroscopy were used to determine the total amount of hydrogen and its bonded component, respectively. It has been established that the total concentration of hydrogen does not depend on the film thickness, and has a uniform depth profile. The concentration of bonded hydrogen changes with the film thickness within the measurement accuracy. The data obtained suggest the presence of molecular (non-bonded) hydrogen, uniformly distributed in concentration across the film thickness. 相似文献
993.
Hook T.B. Brown J. Cottrell P. Adler E. Hoyniak D. Johnson J. Mann R. 《Electron Devices, IEEE Transactions on》2003,50(9):1946-1951
Lateral scattering of retrograde well implants is shown to have an effect on the threshold voltage of nearby devices. The threshold voltage of both NMOSFETs and PMOSFETs increases in magnitude for conventional retrograde wells, but for triple-well isolated NMOSFETs the threshold voltage decreases for narrow devices near the edge of the well. Electrical data, SIMS, and SUPREM4 simulations are shown that elucidate the phenomenon. 相似文献
994.
Deformation behavior of stoichiometric blends made from poly(styrene-co-styrenesulfonic acid) (SPS) and poly(styrene-co-4-vinylpyridine) (SVP) was investigated by TEM observation of strained thin films. An FTIR investigation revealed that ionic cross-links were formed between the component polymers upon blending due to intermolecular ion-ion interactions, which arose from proton transfer from sulfonic acid groups to pyridine groups. TEM observations indicate that the deformation mode of the blends changed from crazing only to crazing plus shear deformation, with the shear contribution becoming larger, as the ion content in the blends increased. Such changes in deformation mode can be understood as arising from an increase in the ‘effective’ strand density due to the formation of ionic cross-links upon blending. It was also found that the ionic cross-links via pyridinium cation/sulfonate anion ion pairs were more effective in inducing the transition of deformation mode than ionic cross-links via -SO3−/Na+ or -SO3−/Ca2+ ion pairs. 相似文献
995.
硫酸厂主鼓风机的主要设计准则 总被引:1,自引:1,他引:0
论述现代硫酸厂主鼓风机设计时必须考虑的关键因素,通过实例讨论操作费用与投资之间的平衡关系以及对装置竞争力的影响。建议在硫酸厂严酷的操作条件下改进风机特性,提高耐磨性并采用维修友好的设计。 相似文献
996.
EGD级环保型润滑油及其生物降解性 总被引:2,自引:0,他引:2
经生物降解性评定和粘度测量确定了EGD级生物降解二冲程润滑油复合基础油的组成;通过发动机清净性试验确定了添加剂组成配方和总添加量。在此基础上,研制了生物降解二冲程油(Oil B),其达到了ISO EGD级二冲程油标准中规定的6个发动机性能指标和2个理化性能指标,生物降解性达到73.1%。 相似文献
997.
反转构造的反转程度及其与油气聚集的关系 总被引:10,自引:2,他引:8
结合典型反转构造地震剖面,分析了断层型和褶皱型两类反转构造的反转程度,上下皆正断层型和向形褶皱型反转构造的反转程度轻微;上逆下正断层型和透镜形褶皱型反转构造的反转程度中等;上下皆逆断层型和背形褶皱型反转构造的反转程度强烈。分析了反转构造的反转程度与油气聚集的关系,处于轻微反转程度的上下皆正断层型反转和向形褶皱型反转,以及处于强烈反转程度的上下皆逆断层型反转和背形褶皱型反转不利于油气聚集;处于中等反转程度的上逆下正断层型反转和透镜形褶皱型反转类型有利于油气聚集成藏。 相似文献
998.
番禺30-1砂岩强水驱气藏储层非均质性研究 总被引:7,自引:5,他引:2
针对垂向非均质性严重且边底水能量强的番禺30-1气田面临的潜在开发问题,通过岩心分析及测井二次解释,对其夹层特征及储层非均质性等进行了研究,划分出19个流动单元并定量描述了各流动单元的特征参数,建立了该气田的精细地质模型。综合评价表明,新建的地质模型具有较高的精度,为该气藏合理开发提供了坚实的地质基础。 相似文献
999.
涡轮搅拌桨反应器混合过程的数值计算 总被引:1,自引:1,他引:0
利用CFD方法计算单层涡轮反应器搅拌槽内流体混合过程的速度场和浓度场,研究物料在搅拌槽内的混合过程,以及不同监测点对混合时间的影响。结果表明,搅拌槽内物料的混合主要受槽内流体的流动形式所影响;混合时间的长短与监测点位置有关;在搅拌桨的桨叶附近进行监测所得到的混合时间较短,在液面附近进行监测所得的混合时间较长。在实际生产和试验中,应注意对监测点位置的选取。 相似文献
1000.
Reducing CIC filter complexity 总被引:1,自引:0,他引:1
This paper provides several tricks to reduce the complexity and enhance the usefulness of cascaded integrator-comb (CIC) filters. The first trick shows a way to reduce the number of adders and delay elements in a multi-stage CIC interpolation filter. The result is a multiplierless scheme that performs high-order linear interpolation using CIC filters. The second trick shows a way to eliminate the integrators from CIC decimation filters. The benefit is the elimination of unpleasant data word growth problems. 相似文献