低温脂肪酶产生菌的筛选、鉴定及其部分酶学性质

从南极乔治王岛冻土来源的76株低温细菌中筛选到13株低温脂肪酶产生菌，对其中的BTsl0022菌株进行鉴定。通过生理生化特征、16s rDNA基因序列的同源性和系统发育分析发现，菌株RTsl0022属于假单胞菌属(Pseudomonas)，但与已定名的假单胞菌有一定的差异，与未定名的Pseudomonas sp．PsB的亲缘关系最接近，故将其暂定名为Pseudomonas sp．BTsl0022。对该菌脂肪酶的酶学性质初步研究表明，酶的最适作用温度为24℃，对热敏感，60℃处理30min仅残留25％酶活性，酶的适宜作用pH范围在7．0～9．0，最适pH为8．0。     

Windows2000环境下实时控制系统的软件实现

文章介绍了在windows2000环境下通过编写WDM（Windows Driver Model）设备驱动程序实现实时数据采集和控制的一种方法。采用研华数据采集卡PCL818L产生中断信号．通过编写WDM驱动程序实现了在windows2000环境下转台的位置控制。并在实验中调试通过。实验结果表明：在采样频率为1KHz的情况下。控制系统很好实现了输出对输入的跟踪，证明了采用方法的正确性。该方法解决了windows2000环境下的实时性问题，为在windows环境下实时控制系统的实现提供了有益的尝试。     

A novel InP/InGaAs TEBT for ultralow current operations

A novel InP/InGaAs tunneling emitter bipolar transistor (TEBT) is fabricated and demonstrated. The studied device exhibits a very small collector-emitter offset voltage of 40 mV and an extremely wide operation regime. The operation region is larger than 11 decades in magnitude of collector current (10/sup -12/ to 10/sup -1/A). A current gain of 3 is obtained even if the device is operated at an ultralow collector current of 3.9 /spl times/ 10/sup -12/A (1.56 /spl times/ 10/sup -7/A/cm/sup 2/). Furthermore, the common-emitter breakdown voltage of the studied device is higher than 2 V. Consequently, the studied device shows a promise for low supply voltage, and low-power consumption circuit applications.     

分布式光纤拉曼放大器的增益平坦设计

介绍了在波分复用（WDM）系统中分布式光纤拉曼放大器（FRA）的理论分析模型。在此基础上，对增益平坦设计所需考虑的因素进行了分析；最后通过试验证明了它的有效性。     

激光扫描加工图形控制模型的研究

针对激光扫描加工中存在固有图形畸变的情况,提出了DEA(dual-ends approch)控制模型。由于该模型不仅考虑了透镜焦距f、激光入射角θ、振镜偏转角和光学镜组之间的距离,而且还考虑了透镜中心厚度、透镜曲面曲率半径以及透镜介质折射率,因此提高了激光扫描加工系统的加工精度,减小了加工误差。同时利用VC++6.0编制了一个对话框程序,对传统fθ控制模型和DEA控制模型进行了分析比较,结果显示,DEA控制模型能正确表达所设计的加工图形,其精度高于fθ图形控制模型。     

Hf-doped and NH/sub 3/-nitrided high-K gate dielectric thin film with least drain current degradation and flatband voltage shift

A novel technique to form high-K dielectric of HfSiON by doping base oxide with Hf and nitridation with NH/sub 3/, sequentially, is proposed. The HfSiON gate dielectric demonstrates excellent device performances such as only 10% degradation of saturation drain current and almost 45 times of magnitude reduction in gate leakage compared with conventional SiO/sub 2/ gate at the approximately same equivalent oxide thickness. Additionally, negligible flatband voltage shift is achieved with this technique. Time-dependent dielectric breakdown tests indicate that the lifetime of HfSiON is longer than 10 years at V/sub dd/=2 V.     

Ripple: a wireless token-passing protocol for multi-hop wireless mesh networks

This work presents a wireless token-passing protocol, named Ripple, for wireless mesh networks (WMNs). In contrast to existing random-access approaches, Ripple uses a decentralized controlled-access approach to protect nodes from unintentional packet collisions and maximize the spatial reuse. The performance of Ripple under an error-free wireless channel was investigated and the accuracy of the analysis was verified by simulation. Simulation results also indicated that Ripple achieved throughput, stability, and QoS enhancement than that of 802.11 DCF under a highly loaded situation.     

声光效应拉曼-内斯方程矩阵级数解法及声光调制器优化设计

提出一种求解正常声光相互作用拉曼 内斯 (Raman Nath)方程的矩阵级数解法 ,该解法直观方便且具有普遍性。计算结果表明 ,对Q =4 1π ,Bragg衍射的效率只有 97 5 % ;对非对称入射 ,以往的Raman Nath近似解误差较大 ;指出提高Bragg衍射效率的有效途径在于提高声光频率比并给出计算声光器件最优长度的计算公式。     

High-frequency small signal AC and noise modeling of MOSFETs for RFIC design

High-frequency (HF) AC and noise modeling of MOSFETs for radio frequency (RF) integrated circuit (IC) design is discussed. A subcircuit RF model incorporating the HF effects of parasitics is presented. This model is compared with the measured data for both y parameter and f_T characteristics. Good model accuracy is achieved against measurements for a 0.25 μm RF CMOS technology. The HF noise predictivity of the model is also examined with measured data. Furthermore, a methodology to extract the channel thermal noise of MOSFETs from HF noise measurements is presented. By using the extracted channel thermal noise, any thermal noise models can be verified directly. Several noise models including the RF model discussed in this paper have been examined, and the results show that the RF model can predict the channel thermal noise better than the other models     

Fabrication of 1.55 μm VCSELs on Si using metallic bonding

Using AuGeNiCr multilayered metals as the wafer bonding medium, long-wavelength GaInAsP/InP vertical cavity surface emitting lasers employing Al-oxide/Si as the upper and lower distributed Bragg reflectors were fabricated on Si substrate with the bonding interface formed outside the vertical cavity surface emitting laser cavity. Laser emission at 1.545 μm was measured under pulsed operations near room temperature. The low-temperature metallic bonding process demonstrates a great potential in device fabrication