基于机器人终端的VoIP通信系统的设计与实现

通过对VoIP的一些关键技术的研究,设计了一个小型局域网上的VoIP通信系统.该系统采用的是P2P(Peer-to-peer)网络传输模式,包括PC终端和嵌入式终端两部分.经测试,PC终端和嵌入式终端之间能够实现流畅的交互式语音应答,这对应用到机器人平台起到了积极地推进作用.     

An Efficient Volume Integral Equation Solution to EM Scattering by Complex Bodies With Inhomogeneous Bi-Isotropy

A generalized volume integral equation method is formulated for electromagnetic scattering by arbitrarily shaped complex bodies with inhomogeneous bi-isotropy. Based on the volume equivalence principle, the integral equations are represented in terms of a pair of coupled bi-isotropic polarized volume electric and magnetic flux densities. Reduction of the integral equations into the corresponding matrix equations is obtained using the method of moments (MoM) combined with the tetrahedral mesh. In the MoM solution, the three-dimensional solenoidal function is incorporated as the basis function defined over each tetrahedral element and the details of implementation, particularly the treatment of integral singularities, will be elucidated. The efficiency and accuracy of the proposed method are validated by illustratively supported examples.     

Dual-band stacked folded shorted patch antenna

A novel stacked folded shorted patch antenna for dual-band operation is presented. It has impedance bandwidths (SWR<2) of 22.9 and 20.3% in the lower and the upper bands, respectively. It is 0.0461lambda_L in height and 0.27lambda_L in length, where lambda_L is the free space wavelength at the centre frequency of the lower band. Therefore, it is very suitable for today's multi-band wireless communication systems.     

A 1-V 86-mW-RX 53-mW-TX Single-Chip CMOS Transceiver for WLAN IEEE 802.11a

A 1-V WLAN IEEE 802.11a CMOS transceiver integrates all building blocks on a single chip including a transformer-feedback VCO and a stacked divider for the frequency synthesizer and 8-bit IQ ADCs and 8-bit IQ DACs. Fabricated in a 0.18-mum CMOS process and operated at a single 1-V supply, the receiver and the transmitter consume 85.7 mW and 53.2 mW, including the frequency synthesizer, respectively. The total chip area with pads is 12.5 mm².     

集成化DAM变频电路设计

介绍了数字阵列雷达中DAM（数字阵列模块）内部的高度集成化的变频电路的设计思想,用于数字阵列雷达的收发变频通道,各项指标均满足系统要求,可达到常规分立元件电路的指标,讲述了采用MCM（多芯片组件）技术,结合电路优化集成设计,将有源变频器芯片、开关等器件集成于金属陶瓷结构的封装内,使得DAM的变频通道集成度得以大幅度提高。     

高精密度液体感光树脂凸版(液体版)的工艺研究

提出一种制作LCD用高精密度网点液体版的方案，通过接近式曝光理论分析和采用特殊的工艺方法，使得网点的浮雕结构合理，获得了高分辨率、高均匀性的网点结构，从而可印刷出不同厚度且膜层均匀的PI定向膜。     

基于Bootstrap 法的机载浮标搜潜系统作战效能指标分析

为解决试验样本量较少导致评估精度较低的问题,引入Bootstrap方法对机载浮标搜潜系统部分指标进行评估。介绍对于成败型指标的目标发现率评估步骤,并对一定环境下的潜艇目标发现率、浮标信号有效接收距离和某分机灵敏度这3项有代表性的指标进行仿真。分析结果说明该方法确实能够提高评估精度。     

Gigabit Ethernet switches using a shared buffer architecture

Gigabit Ethernet networks have seen great demand in recent years. This growth was fueled by both an increase in port speed at the client side and new applications in MAN and WAN space. In this article, we report a highly integrated Ethernet switch IC design that supports 12 gigabit ports and one 10 Gb port. All packet memory and search memory are integrated on chip. A deeply pipelined structure with parallel memory access is employed to achieve wirespeed search performance. A flexible policy engine is designed to allow packet filtering and modification. A novel tail buffer architecture is proposed to address the variable packet length issue in the shared buffer architecture. Custom mixed-signal circuits are incorporated to implement the 10G Ethernet interface in XGMII. The chip integrates 70 million transistors in a 16 mm /spl times/ 15 mm die using 0.18 /spl mu/m CMOS technology. The chip has been tested to verify the wirespeed searching and switching performance.     

非标准情况下衰荡光谱的理论分析

本文研究了当激光脉冲线宽远大于被测吸收物质的吸收线宽时,衰荡光谱满足的规律,以及在这种情况下,测量灵敏度的大小。     

OMVPE growth of P-type GaN using solution Cp2Mg

Bis(cyclopentadienyl)magnesium (Cp₂Mg) is a common source for p-type doping in GaN and AlInGaP materials. It is a white crystalline solid with very low vapor pressure, leading to transport problems similar to solid trimethyindium (TMI). Some of these problems can be alleviated by a newly developed source-solution magnesocene, Cp₂Mg, dissolved in a solvent that is essentially nonvolatile. In this paper, we report the growth and comparative results of Mg-doped GaN grown by OMVPE using solid and solution Cp₂Mg. Using both sources, we optimized parameters to obtain high-quality GaN growth with hole concentrations up to 1 10¹⁸/cm³.