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991.
Zhibin Xiong Haitao Liu Chunxiang Zhu Sin J.K.O. 《Electron Devices, IEEE Transactions on》2005,52(12):2629-2633
In this paper, a new polysilicon CMOS self-aligned double-gate thin-film transistor (SA-DG TFT) technology is proposed and experimentally demonstrated. The self-alignment between the top- and bottom-gate is realized by a backlight exposure technique. The structure has an ultrathin channel region (300 /spl Aring/) and a thick source/drain region. Experimental results show that this technology provides excellent current saturation due to a combination of the effective reduction in the drain field and the full depletion of the ultrathin channel. Moreover, for n-channel devices, the SA-DG TFT has a 4.2 times higher on-current (V/sub gs/=20V) as compared to the conventional single-gate TFT. Whereas for the p-channel devices, the SADG TFT has a 3.6 times higher on-current (V/sub gs/=-20V) compared to the conventional single-gate device. 相似文献
992.
基于双因子认证技术的网络身份识别 总被引:5,自引:0,他引:5
本文提出了一种基于动态双因子认证技术的网络身份识别方法,用户每次登录的口令是利用系统时间和用户ID通过MD5加密算法计算得到,其通过MD5加密后生成的登录口令是随机的,这将进一步提高开放网络环境下身份识别的可靠性和安全性。同时,本文还提出网络身份识别技术可以应用到各类网站的服务器上,用来完成对用户身份的识别,以提高网络系统的安全性。 相似文献
993.
Colour Centres and Energy Transfer in BaF2-xClx:Eu2+ Phosphors 总被引:1,自引:1,他引:0
The optical absorption spectra of BaF2-xClx:Eu2 after ultraviolet (UV) light excitation were investigated.The differences between the absorption spectra after and before excitation (DAS) were observed.The DAS increase at both the high and the low energy side of F band in BaF2-xClx:Eu2 after 245 nm UV light excitation.The bleach effect of UV light and the absorption of electrons in the valence band may account for the former and the formation of Fa centres (association of F(Cl-) centres), whose absorption band matches the HeNe laser better, may explain the latter.In the write-in process, the transfer of electrons is via tunneling.In the readout process, the transfer of electrons captured in F(F-) and Fa centres is more likely via tunneling, and that of F(Cl-) centres is more likely via conduction band. 相似文献
994.
本文介绍了一个用户接口管理系统NUUIMS的设计和实现.重点叙述了该系统基于规范化目标用户接口模型的设计思想,系统组成及描述方法.文章也讨论了使用NUUIMS设计而成的用户接口的特点. 相似文献
995.
As a major pollutant source to urban receiving waters, the non-point source pollution from urban runoff needs to be well studied and effectively controlled. Based on monitoring data from urban runoff pollutant sources, this article describes a systematic estimation of total pollutant loads from the urban areas of Beijing. A numerical model was developed to quantify main pollutant loads of urban runoff in Beijing. A sub-procedure is involved in this method, in which the flush process influences both the quantity and quality of stormwater runoff. A statistics-based method was applied in computing the annual pollutant load as an output of the runoff. The proportions of pollutant from point-source and non-point sources were compared. This provides a scientific basis for proper environmental input assessment of urban stormwater pollution to receiving waters, improvement of infrastructure performance, implementation of urban stormwater management, and utilization of stormwater. 相似文献
996.
997.
998.
本文评价了塑料闪烁片用作软β核素探测器时的计数效率、β谱、本底谱和康普顿电子谱的特征。文中强调:采用胶合光导剂构成的系统是一种新型探测器(软β核素内部样品塑料闪烁探测器)。本文提出内部样品固体探测器、胶合光导剂和胶合闪烁光导剂的新概念。 相似文献
999.
Charge in metal-organic chemical vapor deposition-grown HfO/sub 2/ gate stacks has been systematically studied using nMOS capacitors. It is found that, for these films, the charge in the stack is mainly concentrated at the interfaces between the layers and is negative at the HfO/sub 2//interfacial layer (IL) interface and positive at the Si/IL interface. In general, the calculated charge densities at both interfaces are of order 10/sup 12/ cm/sup -2/. A forming gas anneal (FGA) reduces both interface charge greatly. The FGA can also significantly reduce the hysteresis and interface state density. The effects of post deposition anneal at various temperatures and under various ambients have also been studied. It is found that a high-temperature dilute oxidizing ambient anneal followed by an FGA reduces the charge at both interfaces. 相似文献
1000.
Lifang Li Jindal N. Goldsmith A. 《IEEE transactions on information theory / Professional Technical Group on Information Theory》2005,51(4):1326-1347
We derive the outage capacity region of an M-user fading multiple-access channel (MAC) under the assumption that both the transmitters and the receiver have perfect channel side information (CSI). The outage capacity region is implicitly obtained by deriving the outage probability region for a given rate vector. Given a required rate and average power constraint for each user, we find a successive decoding strategy and a power allocation policy that achieves points on the boundary of the outage probability region. We discuss the scenario where an outage must be declared simultaneously for all users (common outage) and when outages can be declared individually (individual outage) for each user. 相似文献