Investigation of the initial stage of borating tantalum

The results of investigation of initial stage of the tantalum borating as well as the effect of oxygen and hydrogen on it are presented. The scheme of the initial stage of tantalum boron saturation is proposed.     

External heat transfer in infiltrated granular beds. Experimental study

Experimental data was obtained on external heat transfer in infiltrated granular beds of coarse particles. It was determined that calcualtions with the proposed model agree satisfactorily with the experimental results.Translated from Inzhenerno-Fizicheskii Zhurnal, Vol. 53, No. 6, pp. 919–923, December, 1988.     

为了满足使用者需求而设计——上海地铁研究·使用者需求

在上海地铁研究中,我们发现了许多使用者的不满。这些不满来自于设计师对使用者的缺乏了解和缺乏关注。通过对上海地铁真实的使用者、真实的地点和真实的时间的调研,我们分析出25项上海地铁使用者的需求。并提出希望设计师能够从这些使用者的需求出发,去作为使用者带来良好体验的设计。     

吸入短寿命氡子体动物肺组织剂量与体重关系的探讨

本文介绍吸入短寿命氡子体的不同种动物肺组织吸收剂量与体重的关系。实验结果表明,吸收剂量随体重的增加而减小。     

巯基棉预浓集—中子活化法测定水泥及其浸出水中的微量汞

在不同酸度下巯基棉可以从溶液中富集和分离Au、As、Ag、Br、Cu、Ca Co、InHg、Ni、Se、Sb、Sn、Pb、W、Fe和In等30多种元素。由于用巯基棉吸附待测元素后不必洗脱,因此大大提高了富集能力,可用于海水、地下水、地表水及工业废水中一些元素的测量。本文用巯基棉富集后进行中子活化分析测定水泥及其浸出水中的汞。     

Characteristics of tunneling and impact ionization in ZnS:Mn-based thin-film electroluminescent structures

A method for measuring the characteristics of tunneling and impact ionization in thin-film electroluminescent emitters is suggested. This method makes it possible to find time dependences of the space-charge layer thickness near the anode and the length of the impact ionization region, to determine more exactly the time dependence of the field in the potential barrier at the cathode interface, the maximum depth of the surface states from which electron tunneling occurs, the minimum thickness of the barrier, and the electron tunneling probability, as well as the impact ionization rate for the deep centers related to structural defects of the phosphor layer.     

宣钢1260 m3高炉扩容大修改造设计

宣钢l260m^3高炉大修改造时将炉容扩大到l350m^3，对高炉本体系统设备及冷却系统、自动控制及检测系统进行了全面的改造更新，在炉腹、炉腰及炉身下部高热负荷区域采用铜冷却壁，取消炉身中上部铸铁冷却壁凸台，并采用薄内衬等先进、适用、可靠、成熟的技术。     

N-Type Field-Effect Transistors Using Multiple Mg-Doped ZnO Nanorods

Nanorod field-effect transistors (FETs) that use multiple Mg-doped ZnO nanorods and a SiO₂ gate insulator were fabricated and characterized. The use of multiple nanorods provides higher on-currents without significant degradation in threshold voltage shift and subthreshold slopes. It has been observed that the on-currents of the multiple ZnO nanorod FETs increase approximately linearly with the number of nanorods, with on-currents of ~1 muA per nanorod and little change in off-current (~4times10^-12). The subthreshold slopes and on-off ratios typically improve as the number of nanorods within the device channel is increased, reflecting good uniformity of properties from nanorod to nanorod. It is expected that Mg dopants contribute to high n-type semiconductor characteristics during ZnO nanorod growth. For comparison, nonintentionally doped ZnO nanorod FETs are fabricated, and show low conductivity to compare with Mg-doped ZnO nanorods. In addition, temperature-dependent current-voltage characteristics of single ZnO nanorod FETs indicate that the activation energy of the drain current is very low (0.05-0.16 eV) at gate voltages both above and below threshold     

Interaction of optical radiation with GaAs nanowhisker arrays

We have studied the reflectivity spectra of doped GaAs nanowhiskers (NWs) with various morphologies, which were grown by molecular-beam epitaxy. It is established that the character of the reflectivity spectra of NWs is determined by the shape of nanocrystals. NWs with droplike and pointlike vertices differently interact with electromagnetic radiation. Laser radiation produces a spectraly selective action on the NW array, which leads to a change in the NW height and induces “caking” of their vertices, thus modifying the reflectivity of the sample. This phenomenon can be used for the creation of local microstructures with preset characteristics in large NW arrays.