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41.
Ismail K. Meyerson B.S. Rishton S. Chu J. Nelson S. Nocera J. 《Electron Device Letters, IEEE》1992,13(5):229-231
The authors report on the fabrication and the resultant device characteristics of the first 0.25-μm gate-length field-effect transistor based on n-type modulation-doped Si/SiGe. Prepared using ultrahigh vacuum/chemical vapor deposition (UHV/CVD), the mobility and electron sheet charge density in the strained Si channel are 1500 (9500) cm2/V-s and 2.5×1012 (1.5×1012 ) cm-2 at 300 K (77 K). At 77 K, the devices have a current and transconductance of 325 mA/mm and 600 mS/mm, respectively. These values far exceed those found in Si MESFETs and are comparable to the best results achieved in GaAs/AlGaAs modulation-doped transistors 相似文献
42.
用傅里叶变换红外扫描光致发光方法研究了Hg1-xCdxTe体单晶样品,该方法可直接得到HgCdTe晶片组分的二维平面分布,并可得到辐射复合在复合机制中所占比重的平面分布,以及晶体中非平衡载流子寿命的分布 相似文献
43.
44.
The substrate growth temperature dependence of electrical properties for a low-noise MESFET fabricated on MBE-grown material has been demonstrated. The optimum noise figure and its associated gain were attributed to the higher epilayer quality and mobility at a growth temperature of 650°C between temperatures of 550°C and 700°C. 相似文献
45.
Low cardiac output after open heart operations in neonates and infants carries a high mortality. Delayed sternal closure may be life-saving but may prolong hospital stay and increase costs. To circumvent these issues, we shaped homograft bone and interposed it between the sternal edges to allow primary wound closure in 2 pediatric patients. Midterm results are satisfactory. 相似文献
46.
Z. S. Peng Z. Q. Hua Y. N. Li J. Di J. Ma Y. M. Chu W. N. Zhen Y. L. Yang H. J. Wang Z. X. Zhao 《Journal of Superconductivity》1998,11(6):749-754
Bi-based superconductors are of great interest in high-temperature superconductors. We describe what is believed to be the first synthesis of these materials using the Pechini process, a low-temperature synthetic method that often yields inorganic oxide of excellent phase purity and well-controlled stoichiometry. Using this process, it has been possible to synthesize phase-pure Bi-2223 phase by calcining the appropriate polymeric precursors in air at 800°C for several hours. The superconductivity studies show that the Pechini-synthesized materials appear to offer high-quality performance. 相似文献
47.
Wang Fei Zhang Weiwei Xu Zongfeng Ping Jingyu Chu Hao 《Neural computing & applications》2021,33(15):9061-9073
Neural Computing and Applications - In real-world application of affective brain–computer interface (aBCI), individual differences across subjects and non-stationary characteristics of... 相似文献
48.
This paper is concerned with the problem of stochastic stability analysis for a class of genetic regulatory networks with Markovian jump parameters and time‐varying delays. A delay‐dependent stability criterion is derived by using a novel mode‐dependent Lyapunov functional. The derived stability criterion is expressed in terms of linear matrix inequalities and is less conservative than the existing ones in the literature. A numerical example is provided to demonstrate the effectiveness of the proposed stability criterion. Copyright © 2011 John Wiley and Sons Asia Pte Ltd and Chinese Automatic Control Society 相似文献
49.
50.
A twin-plane re-entrant corner effect (TPRE) in growth of chemical vapour deposited (CVD) -SiC is described by the film and particles of gas-phase homogeneous nucleation. The structural morphology has been characterized by scanning electron microscopy and transmission electron microscopy. Morphological characteristics of the deposited crystals, such as triangularity, hexagons or facets have been explained in terms of the re-entrant corner effect at twin junctions, which were proposed as preferential growth sites for perfect crystals. For real deposits, screw dislocations and/or the re-entrant corner effect are not expected to be compatible. The majority of chemical vapour deposited SiC crystals have a high defect density comprised of {111} twins and dislocations associated with the process variables. Infrared transmission spectra and electron spectroscopy of chemical analysis indicated that the major chemical bonds of CVD -SiC were Si-C and C-H bonds. The positions of the 1s or 2p corelevel peaks for deposits are described. 相似文献